Acquisition of an Ultrahigh Vacuum Scanning Tunneling Microscope for the Study of Surface Chemistry and Surface Physics

购买超高真空扫描隧道显微镜用于表面化学和表面物理研究

基本信息

  • 批准号:
    0079796
  • 负责人:
  • 金额:
    $ 13.84万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2000
  • 资助国家:
    美国
  • 起止时间:
    2000-10-01 至 2002-11-30
  • 项目状态:
    已结题

项目摘要

0079796McEllistremThe scanning tunneling microscope has done much to broaden our understanding ofSemiconductors and metals, providing a unique view of material surfaces available by noother technique. Specifically, the microscope's ability to resolve individual surfaceatoms has lead to an improved understanding of the chemistry and physics of solidsurfaces. How a chemical reaction proceeds on a surface, or how different surface atomsdiffuse, segregate, or combine can be literally watched on an atomic scale. The awardedinstrument will be used to investigate the formation of metal silicides on silicon, sincemetal/semiconductor interfaces continue to impact device fabrication. At a morefundamental level, understanding the processes that lead to metal silicide formation willallow the controlled formation of nanoscale particles, particles that are driven to self-assembleby their reactivity. The instrument will also be used to investigate how reactions proceed on gallium nitride (from which electro-optic devices that emit in the blue/violet can be made). In particular, the dynamics of hydrogen on the gallium nitride surface is of technological interest, and can also be used as a probe of local surface reactivity. Since gallium nitride surfaces are also polar (N- vs. Ga-terminated), the impact of surface polarity on surface reactions will also be studied.Semiconductors are widely used in electronic and electro-optic devices. Nearly allcomputer chips, for example, are fabricated from silicon. Compound semiconductors(the so-called III-V semiconductors) are often found in devices which convert electricalenergy into light, namely light-emitting diodes, found in nearly all consumer electronics,and laser diodes, which form the heart of a solid state laser, the engine in laser printers and compact disc players. Research into semiconductors has lead to the development of faster, smaller computer chips (and thus computers), and novel electro-optic devices. The scanning tunneling microscope has done much to broaden our knowledge of semiconductors and metals, providing a unique view of material surfaces unavailable by any other technique. Specifically, this microscope is capable of attaining atomic resolution images of surfaces. With it, surface physics and chemistry can observed on an atomic scale. In short, how atoms move and distribute themselves on a surface, or how a chemical reaction proceeds on a surface, can be imaged directly with a scanning tunneling microscope. The awarded instrument will be used to further our understanding of how metals interact with silicon, and to investigate the surface chemistry of novel semiconductor materials used in electro-optic applications.
0079796 McEllistrom扫描隧道显微镜在拓宽我们对半导体和金属的理解方面做了很多工作,它提供了一种独特的材料表面视图,这是其他技术所无法提供的。具体来说,显微镜分辨单个表面原子的能力使人们对固体表面的化学和物理有了更好的理解。化学反应如何在表面上进行,或者不同的表面原子如何扩散、分离或联合收割机,都可以在原子尺度上观察到。该奖项将用于研究硅上金属硅化物的形成,因为金属/半导体界面继续影响器件制造。在更基础的层面上,理解导致金属硅化物形成的过程将允许控制纳米级颗粒的形成,这些颗粒通过其反应性被驱动进行自组装。该仪器还将用于研究氮化镓上的反应如何进行(可以制造发出蓝色/紫色光的电光器件)。特别地,氮化镓表面上的氢的动力学是技术上感兴趣的,并且还可以用作局部表面反应性的探针。由于氮化镓表面也是极性的(N-与Ga-终止),表面极性对表面反应的影响也将被研究。半导体广泛用于电子和电光器件。例如,几乎所有的计算机芯片都是由硅制成的。化合物半导体(即所谓的III-V族半导体)经常出现在将电能转换为光的设备中,即发光二极管,几乎所有消费电子产品中都有,激光二极管形成固态激光器的核心,激光打印机和光盘播放器的引擎。 对半导体的研究导致了更快、更小的计算机芯片(以及计算机)和新型电光器件的发展。扫描隧道显微镜为拓宽我们对半导体和金属的了解做出了很大贡献,提供了任何其他技术都无法提供的材料表面的独特视图。 具体地说,这种显微镜能够获得表面的原子分辨率图像。 有了它,表面物理和化学可以在原子尺度上观察。简而言之,原子如何在表面上移动和分布,或者化学反应如何在表面上进行,可以直接用扫描隧道显微镜成像。获奖的仪器将用于进一步了解金属如何与硅相互作用,并研究电光应用中使用的新型半导体材料的表面化学。

项目成果

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Marcus McEllistrem其他文献

Marcus McEllistrem的其他文献

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{{ truncateString('Marcus McEllistrem', 18)}}的其他基金

Chromatography Opportunities for Learning and Understanding of Modern Separations (COLUMNS)
学习和理解现代分离的色谱机会 (COLUMNS)
  • 批准号:
    0511390
  • 财政年份:
    2005
  • 资助金额:
    $ 13.84万
  • 项目类别:
    Standard Grant
URC Planning Grant: University of Wisconsin System Undergraduate Research Center
URC 规划补助金:威斯康星大学系统本科生研究中心
  • 批准号:
    0418931
  • 财政年份:
    2004
  • 资助金额:
    $ 13.84万
  • 项目类别:
    Standard Grant
RUI: The Interdependence of GaN Surface Chemistry and Surface Morphology and Reconstruction
RUI:GaN 表面化学与表面形貌和重构的相互依赖性
  • 批准号:
    0217551
  • 财政年份:
    2002
  • 资助金额:
    $ 13.84万
  • 项目类别:
    Continuing Grant
Collective Excitations Probed with Neutrons and Nuclear Astrophysics (Physics)
用中子和核天体物理学(物理学)探测集体激发
  • 批准号:
    9001465
  • 财政年份:
    1990
  • 资助金额:
    $ 13.84万
  • 项目类别:
    Continuing Grant
Accelerator Upgrade (Physics)
加速器升级(物理)
  • 批准号:
    8713750
  • 财政年份:
    1987
  • 资助金额:
    $ 13.84万
  • 项目类别:
    Continuing Grant
Neutron Induced Reactions, Collective Nuclear Structures andNuclear Astrophysics
中子诱发反应、集体核结构和核天体物理学
  • 批准号:
    8702369
  • 财政年份:
    1987
  • 资助金额:
    $ 13.84万
  • 项目类别:
    Continuing Grant
Neutron Induced Reactions, Nuclear Structure Studies with Neutrons, and Nuclear Astrophysics (Physics)
中子诱发反应、中子核结构研究和核天体物理学(物理学)
  • 批准号:
    8403278
  • 财政年份:
    1984
  • 资助金额:
    $ 13.84万
  • 项目类别:
    Continuing Grant
Neutron and Proton Induced Reactions, Nuclear Structure Studies With Neutrons
中子和质子诱发反应,中子核结构研究
  • 批准号:
    8105572
  • 财政年份:
    1981
  • 资助金额:
    $ 13.84万
  • 项目类别:
    Continuing Grant
Neutron Induced and Neutron Emitting Reactions and Nuclear Structure Studies
中子诱发和中子发射反应以及核结构研究
  • 批准号:
    7803209
  • 财政年份:
    1978
  • 资助金额:
    $ 13.84万
  • 项目类别:
    Continuing Grant
Neutron Cross Sections and Nuclear Structure
中子截面和核结构
  • 批准号:
    7708725
  • 财政年份:
    1977
  • 资助金额:
    $ 13.84万
  • 项目类别:
    Standard Grant

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