Optical Properties of Rare Earth DOPED Wide-BandGap Nitride Semiconductors

稀土掺杂宽带隙氮化物半导体的光学特性

• 批准号: 0083412
• 负责人: Henryk Lozykowski
• 金额: --
• 依托单位: Ohio University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-09-01 至 2004-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0083412&HistoricalAwards=false
• 关键词: Optical; Properties; Rare; Earth; DOPED

This project seeks to advance understanding of luminescence properties of rare earth (RE) doped GaN, AlN and their alloys which have great potential for use in new generation of light emitting devices. Study of optical and electrical properties of wide-bandgap III-V nitride semiconductors doped with RE ions will be performed in an attempt to gain further insight into the excitation and deexcitation processes of RE 4f n transitions. It will provide a comprehensive understanding of the optical-electrical properties of these materials and thereby assessing the potential for rare earth doped semiconductor devices. In addition, the optical properties of rare earth doped III-V nitride alloys will be investigated in order to attempts to build MIS, p-n heterojunction and other light emitting structures. Investigation of electro-optical properties of GaN and AlN doped with rare earth impurity should determine what type of defect RE ions introduce in III-nitrides hosts. The optical technique will include photoluminescence spectroscopy (PL), selective excitation spectroscopy (SES), cathodoluminescence spectroscopy (CL), rise and decay kinetics measurements and other complementary characterization techniques. The goal of this work is to develop highly efficient materials for novel UV visible and infrared optoelectronics devices. For these applications controllable doping n and p type are an obvious necessity. The project addresses basic research issues in a topical area of photonic material science having high technological relevance. An important feature of the project is the integration of research and education through the training of the students in a fundamentally and technologically significant area.

本项目旨在促进对稀土掺杂GaN、AlN及其合金的发光特性的理解，这些材料在新一代发光器件中具有巨大的应用潜力。研究宽带隙Ⅲ-Ⅴ族氮化物半导体掺杂稀土离子的光学和电学性质将被执行，试图获得进一步了解RE 4fn跃迁的激发和去激发过程。它将提供对这些材料的光电特性的全面理解，从而评估稀土掺杂半导体器件的潜力。此外，本研究亦将探讨稀土掺杂之III-V族氮化物合金之光学性质，以尝试建构MIS、p-n异质接面及其他发光结构。研究掺杂稀土杂质的GaN和AlN的电光特性应该确定RE离子在III族氮化物基质中引入了什么类型的缺陷。光学技术将包括光致发光光谱（PL），选择性激发光谱（SES），阴极发光光谱（CL），上升和衰减动力学测量和其他补充表征技术。本工作的目标是为新型紫外可见光和红外光电子器件开发高效材料。对于这些应用，可控的n型和p型掺杂是明显必要的。该项目解决了光子材料科学领域的基础研究问题，具有很高的技术相关性。该项目的一个重要特点是通过在一个基础和技术重要领域对学生进行培训，将研究和教育结合起来。