SBIR Phase II: Ultra-Compact Driver Technology for Extending the Lifetime of High Power Laser Diode Arrays

SBIR 第二阶段：用于延长高功率激光二极管阵列使用寿命的超紧凑驱动器技术

• 批准号: 0109913
• 负责人: Rodney Petr
• 金额: $ 50万
• 依托单位: Science Research Laboratory Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-09-15 至 2003-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0109913&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Ultra; Compact

This Small Business Innovation Research (SBIR) Phase II project will develop compact, all-solid-state, pulsed drivers coupled with solid-state protection circuitry for powering laser diodes/diode arrays and increasing their reliability and lifetime. New high-current semiconductor switch technology will be coupled with proprietary new diode protection circuits featuring fault-mode detection and high-speed current limiting to extend laser diode lifetime tenfold. This leads directly to a tenfold reduction in annual laser operating cost. Recent breakthroughs in high power semiconductor technology, namely the Gate Commutated Thyristor (GCT) switch, also offer significant improvement in speed, power, and compact size over existing commercial devices. Phase II will develop advanced, compact pulsed power modules based on these technologies. GCT technology, coupled with a proprietary fast protection circuitry, offers a significant decrease in diode laser system size and weight and a tenfold decrease in laser cost-of-ownership made possible by increased diode lifetime. New commercial applications for the diode-pumped solid-state lasers are expected to include powering diodes for optical telecommunications and ultraviolet and X-ray point sources for Next Generation Lithography in the semiconductor industry, as well as in laser cutting and welding. Medical uses for this new fault-protected, solid-state driver technology will include oncology and gene therapy.

该小型企业创新研究（SBIR）第二阶段项目将开发紧凑型全固态脉冲驱动器，并结合固态保护电路，用于为激光二极管/二极管阵列供电，并提高其可靠性和寿命。 新的大电流半导体开关技术将与具有故障模式检测和高速限流功能的专有二极管保护电路相结合，将激光二极管的使用寿命延长十倍。 这直接导致每年激光器运行成本降低十倍。 高功率半导体技术的最新突破，即门极换流晶闸管（GCT）开关，也提供了比现有商业设备在速度、功率和紧凑尺寸方面的显著改进。 第二阶段将基于这些技术开发先进、紧凑的脉冲功率模块。GCT技术与专有的快速保护电路相结合，可显著减小二极管激光器系统的尺寸和重量，并通过延长二极管寿命使激光器的拥有成本降低十倍。 二极管泵浦固态激光器的新商业应用预计将包括用于光通信的功率二极管和用于半导体工业中下一代光刻的紫外线和X射线点源，以及激光切割和焊接。 这种新型故障保护固态驱动器技术的医疗用途将包括肿瘤学和基因治疗。