Wet-Chemical Routes to Stable Organic Monolayer-Based Nanoscale Features on Semiconducting Silicon and Germanium Surfaces

半导体硅和锗表面稳定的基于有机单层的纳米级特征的湿化学路线

• 批准号: 0110846
• 负责人: Edward Grant
• 金额: $ 27.5万
• 依托单位: Purdue University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-09-01 至 2004-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0110846&HistoricalAwards=false
• 关键词: Wet; Chemical; Routes; Stable; Organic

This research project is being carried out by Professor Jillian Buriak and her group in the Department of Chemistry at Purdue University. With the support of the Analytical and Surface Chemistry Program, Professor Buriak is exploring a novel method for synthesizing spatially defined functionalized silicon surfaces. Using a scanning probe mediated electrochemical reaction, alkyne molecular species are grafted to silicon and germanium surfaces. This localized functionalization of the surface allows direct electronic communication between the semiconductor substrate and attached molecular electronic devices. Using a novel electrografting method, Professor Buriak and her colleagues at Purdue University are developing synthetic approaches for locally modifying the electronic properties of silicon and germanium semiconductor surfaces. This research is likely to lead to new methods for building molecular electronic devices.

该研究项目由普渡大学化学系的Jillian Buriak教授和她的团队进行。 在分析和表面化学计划的支持下，Buriak教授正在探索一种合成空间定义的功能化硅表面的新方法。 使用扫描探针介导的电化学反应，炔分子物种接枝到硅和锗表面。 表面的这种局部功能化允许半导体衬底和附着的分子电子器件之间的直接电子通信。 使用一种新的电接枝方法，普渡大学的Buriak教授和她的同事正在开发局部修改硅和锗半导体表面电子特性的合成方法。 这项研究可能会导致构建分子电子器件的新方法。