ITR/AP, Simulations and Modelling of Carbon Nanotubes: A Study ofElectronic Correlations
ITR/AP,碳纳米管的模拟和建模:电子相关性的研究
基本信息
- 批准号:0113574
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2001
- 资助国家:美国
- 起止时间:2001-09-01 至 2005-08-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This award is made under the Information Technology Research initiative. Electronic devices are the underpinning of information technology. Present electronic devices are microscale in size. This limits the switching speed at which information can transfer. Nanoscale systems, including carbon nanotubes, have a great potential for a new generation of electronic devices with switching speeds a thousand times faster. However, as the size and dimensionality of electronic devices approach the nanoscale, the effect of correlations and disorder become crucial. Despite their importance, the effects of correlations and disorder remain a significant fundamental challenge to the physics community. A new computational approach will be developed to address this problem.The effects of disorder and correlations are now being studied experimentally in carbon nanotubes. These nanotubes form the smallest diameter quasi-one-dimensional conductors yet produced. The rich phenomena which arise from correlations in nanotubes include Luttinger liquid power law transport observed in single-wall nanotubes, and the recently observed superconductivity in ropes. The role of disorder is seen in the wide range of conductivities measured in metallic tubes.The dynamical cluster approximation (DCA) will be further developed to simulate models of carbon nanotubes. This new technique eliminates the finite-sized errors which can be especially large in one-dimensional systems; allows for the study of intertube coupling, as well as coupling to the tube environment; and, when combined with the Maximum Entropy Method, enables the study of the dynamical response of these systems.Key objectives of the project include the development of a computational tool set to study strongly correlated nanotubes and, as a consequence, develop an understanding of the temperture dependent properties in the two-chain model of a single-walled nanotube; the competition between disorder and correlations; the superconductivity in the two-chain modle and the role of intertube coupling; and the effect of long-range Coulomb forces.%%%This award is made under the Information Technology Research initiative. Electronic devices are the underpinning of information technology. Present electronic devices are microscale in size. This limits the switching speed at which information can transfer. Nanoscale systems, including carbon nanotubes, have a great potential for a new generation of electronic devices with switching speeds a thousand times faster. However, as the size and dimensionality of electronic devices approach the nanoscale, the effect of correlations and disorder become crucial. Despite their importance, the effects of correlations and disorder remain a significant fundamental challenge to the physics community. A new computational approach will be developed to address this problem.Key objectives of the project include the development of a computational tool set to study strongly correlated nanotubes and, as a consequence, develop an understanding of the temperture dependent properties in the two-chain model of a single-walled nanotube; the competition between disorder and correlations; the superconductivity in the two-chain modle and the role of intertube coupling; and the effect of long-range Coulomb forces.***
该奖项是在信息技术研究计划下颁发的。电子设备是信息技术的基础。目前的电子设备都是微米级的。这限制了信息传输的交换速度。包括碳纳米管在内的纳米级系统具有巨大的潜力,可以开发出开关速度快1000倍的新一代电子设备。然而,随着电子设备的尺寸和维度接近纳米级,关联和无序的影响变得至关重要。尽管它们很重要,但关联和无序的影响仍然是物理学界面临的一个重大的根本性挑战。将开发一种新的计算方法来解决这个问题。无序和关联的影响现在正在碳纳米管中进行实验研究。这些纳米管形成了迄今生产的直径最小的准一维导体。由纳米管中的关联引起的丰富的现象包括在单壁纳米管中观察到的Luttinger液体幂定律输运,以及最近在绳索中观察到的超导电性。无序的作用体现在金属管内广泛的电导测量范围内。动力学团簇近似(DCA)将被进一步发展来模拟碳纳米管的模型。这项新技术消除了在一维系统中可能特别大的有限尺寸误差;允许研究管间耦合以及与管环境的耦合;当与最大熵方法相结合时,使得能够研究这些系统的动态响应。该项目的主要目标包括开发一套计算工具来研究强关联纳米管,从而加深对单壁纳米管双链模型中与温度有关的性质的理解;无序和关联之间的竞争;双链模型中的超导电性和管间耦合的作用;以及远程库仑力的影响。%该奖项是在信息技术研究计划下颁发的。电子设备是信息技术的基础。目前的电子设备都是微米级的。这限制了信息传输的交换速度。包括碳纳米管在内的纳米级系统具有巨大的潜力,可以开发出开关速度快1000倍的新一代电子设备。然而,随着电子设备的尺寸和维度接近纳米级,关联和无序的影响变得至关重要。尽管它们很重要,但关联和无序的影响仍然是物理学界面临的一个重大的根本性挑战。将开发一种新的计算方法来解决这一问题。该项目的主要目标包括开发一套计算工具来研究强关联纳米管,从而加深对单壁纳米管双链模型中与温度有关的性质的理解;无序和关联之间的竞争;双链模型中的超导电性和管间耦合的作用;以及长程库仑力的影响。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Mark Jarrell其他文献
Symmetric periodic Anderson model in infinite dimensions.
- DOI:
10.1103/physrevb.51.7429 - 发表时间:
1995-03 - 期刊:
- 影响因子:0
- 作者:
Mark Jarrell - 通讯作者:
Mark Jarrell
Absence of hysteresis at the Mott-Hubbard metal-insulator transition in infinite dimensions
无限维度莫特-哈伯德金属-绝缘体转变处不存在磁滞
- DOI:
10.1103/physrevlett.82.4890 - 发表时间:
1999 - 期刊:
- 影响因子:8.6
- 作者:
J. Schlipf;Mark Jarrell;P. Dongen;N. Blümer;Stefan Kehrein;Thomas Pruschke;D. Vollhardt - 通讯作者:
D. Vollhardt
Phase Diagram of the Two-Channel Kondo Lattice
两通道近藤晶格的相图
- DOI:
10.1103/physrevlett.78.1996 - 发表时间:
1996 - 期刊:
- 影响因子:8.6
- 作者:
Mark Jarrell;H. Pang;D. L. Cox - 通讯作者:
D. L. Cox
Generalized double-exchange model for magnetic semiconductors with angular momentum <em>j</em>
- DOI:
10.1016/j.jmmm.2005.10.031 - 发表时间:
2006-05-01 - 期刊:
- 影响因子:
- 作者:
Randy Fishman;Juana Moreno;Mark Jarrell - 通讯作者:
Mark Jarrell
Mark Jarrell的其他文献
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{{ truncateString('Mark Jarrell', 18)}}的其他基金
Simulations of Strongly Correlated Materials
强相关材料的模拟
- 批准号:
0955980 - 财政年份:2009
- 资助金额:
-- - 项目类别:
Continuing Grant
Simulations of Strongly Correlated Materials
强相关材料的模拟
- 批准号:
0706379 - 财政年份:2007
- 资助金额:
-- - 项目类别:
Continuing Grant
Simulations of Strongly Correlated Materials
强相关材料的模拟
- 批准号:
0312680 - 财政年份:2003
- 资助金额:
-- - 项目类别:
Continuing Grant
Simulations of Strongly Correlated Materials
强相关材料的模拟
- 批准号:
0073308 - 财政年份:2000
- 资助金额:
-- - 项目类别:
Continuing grant
Simulations of Strongly Correlated Materials
强相关材料的模拟
- 批准号:
9704021 - 财政年份:1997
- 资助金额:
-- - 项目类别:
Continuing grant
Simulations of Strongly Correlated Materials
强相关材料的模拟
- 批准号:
9406678 - 财政年份:1994
- 资助金额:
-- - 项目类别:
Continuing grant
Simulations of Strongly Correlated Materials
强相关材料的模拟
- 批准号:
9107563 - 财政年份:1991
- 资助金额:
-- - 项目类别:
Continuing grant
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0218721 - 财政年份:2002
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