Research for Mixed Signal Electronic Technologies: A Joint Initiative Between NSF and SRC - Three Dimensional Planar Device Integration for Mixed Signal Electronics
Research for Mixed Signal Electronic Technologies: A Joint Initiative Between NSF and SRC - Three Dimensional Planar Device Integration for Mixed Signal Electronics
批准号:
0120278
负责人:
Sandip Tiwari
金额:
$15.71万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2001
资助国家:
美国
项目状态:
已结题
起止时间:
2001-09-15 至 2005-08-31
中文摘要
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英文摘要
This research effort is directed to providing a novel solution to the problems that occur with mixed-signal integration by using three-dimensional implementation of planar silicon transistors. The planned research will explore mixed signal technology's viability through research and development of device and process technology incorporating digital and analog planar transistor structures in different single-crystal device planes using techniques of single-crystal silicon layer transfer at low temperatures and by isolating the digital and analog functions with a ground-plane in between. This will be done while continuing to allow a large interconnection density in the horizontal and vertical direction for signal transmission. In order to make this feasible, transfer of thin (100's of nm) layers of single-crystal silicon on a planarized low roughness silicon dioxide surface at temperatures below 550 C has been demonstrated. Interconnections and ground planes based on doped poly-silicon and/or tungsten are incorporated in between the single-crystal silicon planes. The use of multiple planes, with oxide in between, also allows incorporation of other passive elements while limiting the increase in area together with a reduction in the loss effects of high frequencies. It is expected that this approach will reduce noise and cross-talk through the use of ground-planes and reduced coupling. This should provide additional freedom in the design of analog transistors, such as the metal-oxide semiconductor field-effect transistors in this project. This approach is also compatible with and can incorporate other developments in passive elements, such as high quality factor inductors, filters, etc., in back-end of the fabrication process. This research addresses significant issues for potential industrial applications , as analog and digital technologies can differ from each other in quite substantial ways because of the design requirements inherent to high frequency or low power. Maintaining low cost, the need for operation at low power, and the circuit and systems issues arising from interference between analog signals and digital signals are a few of these challenges.
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会议论文
Transistor-Based and Voltage-Compatible Nanoscale Memories and Configurable Elements using Phase Transitions
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批准号:1128518
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项目类别:Standard Grant
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资助金额:$36.0万
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财政年份:2011
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负责人:Sandip Tiwari
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依托单位:
Workshop: Interdisciplinary Challenges beyond the Scaling Limits of Moore's Law. To Be Held in Arlington, VA, August 2-4, 2010.
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批准号:1047541
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:2010
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负责人:Sandip Tiwari
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依托单位:
Nanotechnology Research Instrumentation in Support of NNIN (2008)
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批准号:0821565
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项目类别:Standard Grant
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资助金额:$66.0万
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财政年份:2008
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负责人:Sandip Tiwari
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依托单位:
International Research Experience in Nanotechnology-NNIN and NIMS
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批准号:0727552
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项目类别:Standard Grant
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资助金额:$15.0万
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财政年份:2007
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负责人:Sandip Tiwari
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依托单位:
Nanotechnology Research Instrumentation in Support of NNIN (2007)
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批准号:0722812
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项目类别:Standard Grant
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资助金额:$72.74万
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财政年份:2007
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负责人:Sandip Tiwari
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依托单位:
REU Site: Research Experience in Nanoscale Science, Engineering and Technology at NNIN
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批准号:0649215
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项目类别:Continuing grant
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资助金额:$0.0万
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财政年份:2007
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负责人:Sandip Tiwari
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依托单位:
MRI 2006: Acquisition of Nanotechnology Instrumentation within NNIN: Consortium Proposal
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批准号:0619495
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项目类别:Standard Grant
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资助金额:$29.5万
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财政年份:2006
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负责人:Sandip Tiwari
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依托单位:
MRI: Acquisition of Instrumentation for Nanoscale Characterization and Fabrication (NNIN Consortium Proposal)
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批准号:0521211
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项目类别:Standard Grant
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资助金额:$20.0万
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财政年份:2005
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负责人:Sandip Tiwari
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依托单位:
MRI: Acquisition of Instrumentation for Characterization and Fabrication of Hard and Soft Structures for Remote and On-Site National Usage (NNIN Consortium)
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批准号:0420995
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2004
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负责人:Sandip Tiwari
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依托单位:
Nanotechnology: Interdisciplinary Research and Education Workshop; August 11-13, 2004; Bangalore, India
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批准号:0434513
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项目类别:Standard Grant
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资助金额:$4.99万
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财政年份:2004
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负责人:Sandip Tiwari
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依托单位:
NNUN REU PROGRAM 2003-2005
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批准号:0243991
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项目类别:Continuing grant
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资助金额:$0.0万
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财政年份:2003
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负责人:Sandip Tiwari
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依托单位:
US-Japan Workshop on Tools and Metrology in Nanotechnology
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批准号:0309262
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2003
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负责人:Sandip Tiwari
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依托单位:
MRI: Acquisition of Advanced Electron Beam Lithography System for Nanotechnology
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批准号:0216248
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项目类别:Standard Grant
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资助金额:$168.5万
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财政年份:2002
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负责人:Sandip Tiwari
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依托单位:
Enhanced Processing and Characterization Resources for Micro- and Nanostructures
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批准号:0116358
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项目类别:Standard Grant
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资助金额:$47.18万
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财政年份:2001
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负责人:Sandip Tiwari
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依托单位:
MRI: Equipment for Remote Usage, Access, and Learning at NNUN
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批准号:0079443
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2000
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负责人:Sandip Tiwari
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依托单位:
NANOSCALE: An Electronic Gain Cell for Monitoring Charge on Molecular Chains
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批准号:9986535
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2000
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负责人:Sandip Tiwari
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依托单位:
National Nanofabrication Users Network (NNUN) REU Program
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批准号:9987915
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项目类别:Continuing Grant
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资助金额:$83.79万
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财政年份:2000
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负责人:Sandip Tiwari
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依托单位:
Renewal Proposal for the National Nanofabrication Users Network
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批准号:9731293
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项目类别:Cooperative Agreement
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资助金额:$1633.4万
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财政年份:1999
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负责人:Sandip Tiwari
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依托单位:
国内基金
海外基金
基于MIXED Transformer和DS-TransUNet构建嵌入椎旁肌退变量化模块的体内校准骨密度模型检测骨质疏松的可行性研究。
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批准号:82302303
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项目类别:青年科学基金项目
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资助金额:30万元
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批准年份:2023
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负责人:潘亚玲
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依托单位: