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MRI: Acquisition of Instrumentation for Characterization and Fabrication of Hard and Soft Structures for Remote and On-Site National Usage (NNIN Consortium)

MRI: Acquisition of Instrumentation for Characterization and Fabrication of Hard and Soft Structures for Remote and On-Site National Usage (NNIN Consortium)
MRI:采购用于表征和制造硬结构和软结构的仪器,供远程和现场国家使用(NNIN 联盟)
批准号:
0420995
负责人:
Sandip Tiwari
金额:
$0.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-08-15 至 2007-07-31

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中文摘要
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英文摘要
The acquisition of the Xenon difluoride release system, by Cornell Nanoscale Facility (CNF), a member of the National Nanotechnology Infrastructure Network (NNIN) will make possible the development of reproducible etch capability for fabricating released micro- and nanostructures. Released structures are formed by the selective removal of a sacrificial material contained beneath a surface micro-machined layer. The dissimilar material is removed selectively leaving the surface layer suspended from the substrate. Suspended structures are employed in a range of science and engineering experiments and applications. In characterization, very common forms are the suspended probes used in atomic force, tunneling, magnetic resonance, and optical probe instruments. In biology and electronics applications of micro-electro-mechanical systems, these include sensitive mass detection through resonance, ultra-fine integrated sharp probes used to access regions of soft materials, and resonators. In physics, these include sensitive single electron transistor based detection of position and charge. Fabrication of such structures requires reproducibility and reliability, and since the fragile suspended structures are commonly released through a liquid medium, surface tension during the release process, leads to failure. Xenon difluoride (XeF2) dry gas etching is a technique for achieving this release directly through the gas phase. XeF2 etches silicon spontaneously with high selectivity to other materials. The NNIN, of which CNF is a member, provides equipment, education and technical support to the scientific community. The resources of NNIN are openly available to the entire nation. The presence of a XeF2 Etch System at CNF will represent the first such dry gas etch capability within the NNIN and immediately support an estimated 70 projects in a variety of disciplines involving over 125 users of CNF. The structure of NNIN will enable users throughout the network to take advantage of this process. By leveraging the unique infrastructure contained within the network, the addition of this capability will lead to interesting new directions of research involving new materials, nanoscale released structures, devices with novel 3-D geometries, and other interdisciplinary applications.
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Transistor-Based and Voltage-Compatible Nanoscale Memories and Configurable Elements using Phase Transitions
  • 批准号:
    1128518
  • 项目类别:
    Standard Grant
  • 资助金额:
    $36.0万
  • 财政年份:
    2011
  • 负责人:
    Sandip Tiwari
  • 依托单位:
Workshop: Interdisciplinary Challenges beyond the Scaling Limits of Moore's Law. To Be Held in Arlington, VA, August 2-4, 2010.
  • 批准号:
    1047541
  • 项目类别:
    Standard Grant
  • 资助金额:
    $10.0万
  • 财政年份:
    2010
  • 负责人:
    Sandip Tiwari
  • 依托单位:
Nanotechnology Research Instrumentation in Support of NNIN (2008)
  • 批准号:
    0821565
  • 项目类别:
    Standard Grant
  • 资助金额:
    $66.0万
  • 财政年份:
    2008
  • 负责人:
    Sandip Tiwari
  • 依托单位:
International Research Experience in Nanotechnology-NNIN and NIMS
  • 批准号:
    0727552
  • 项目类别:
    Standard Grant
  • 资助金额:
    $15.0万
  • 财政年份:
    2007
  • 负责人:
    Sandip Tiwari
  • 依托单位:
海外基金