SBIR Phase II: A Source for High Rate Growth of Gallium Nitride Films

该小型企业创新研究第二阶段项目将开发一种中性、高通量/注量氮原子束源，用于大面积 III-V 族氮化物半导体材料的高速率生长。提议的源基于专有的 MID-JET 技术。该技术采用涡流所包含的无电极放电，而不是传统源中常用的介电管。 MIDJET 技术利用 5000°C 的温度产生 1021 个氮原子已经得到证实。这比当前可用来源产生的结果高 2-3 个数量级。它特别适用于金属有机化学气相沉积 (MOCVD) 系统，既可以实现高生长速率，又可以消除氨的使用。 MIDJET 将适用于 MOCVD 反应器，并演示该系统以至少 10 微米/小时的速度生长氮化镓的能力。 该项目将开发一种无电荷、高通量/注量氮原子束，用于生长 III-V 族氮化物材料，可以取代现有的基于等离子体的工具。随着高质量材料在更大面积上的更高增长率，基于 MIDJET 的系统将应用于高功率/高温半导体器件和蓝色照明源（包括用于平板显示器的光源）的制造。

This Small Business Innovation Research Phase II Project will develop a neutral, high flux/fluence nitrogen atom beam source for application to the high rate growth of III-V nitride semi-conducting materials over large areas. The proposed source is based on proprietary MID-JET technology. This technology employs an electrode-less discharge contained by vortex flow, rather than a dielectric tube commonly used in traditional sources. MIDJET technology utilizing a temperature of 5000 C to produce1021 nitrogen atoms has been demonstrated. This is 2-3 orders of magnitude higher than that generated by currently available sources. It is particularly applicable to Metal Organic Chemical Vapor Deposition (MOCVD) systems, where it will allow both high growth rate and the elimination of the use of ammonia. The MIDJET will be adapted for use in a MOCVD reactor and a demonstration made of the system's ability to grow gallium nitride at a rate of at least 10 microns per hour. This project will develop a charge-free, high flux/fluence nitrogen atom beam for the growth of III-V nitride materials which can replace existing plasma-based tools. With higher growth rates of high quality material over larger areas, systems based on the MIDJET will have with application to the fabrication of high power/high temperature semiconductor devices and blue illumination sources (including those for flat panel displays).