SBIR Phase II: A Source for High Rate Growth of Gallium Nitride Films

SBIR II 期：氮化镓薄膜高速生长的来源

• 批准号: 0132055
• 负责人: Willi Schwarz
• 金额: $ 49.36万
• 依托单位: Physical Sciences Incorporated (PSI)
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-03-01 至 2005-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0132055&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Source; Rate

This Small Business Innovation Research Phase II Project will develop a neutral, high flux/fluence nitrogen atom beam source for application to the high rate growth of III-V nitride semi-conducting materials over large areas. The proposed source is based on proprietary MID-JET technology. This technology employs an electrode-less discharge contained by vortex flow, rather than a dielectric tube commonly used in traditional sources. MIDJET technology utilizing a temperature of 5000 C to produce1021 nitrogen atoms has been demonstrated. This is 2-3 orders of magnitude higher than that generated by currently available sources. It is particularly applicable to Metal Organic Chemical Vapor Deposition (MOCVD) systems, where it will allow both high growth rate and the elimination of the use of ammonia. The MIDJET will be adapted for use in a MOCVD reactor and a demonstration made of the system's ability to grow gallium nitride at a rate of at least 10 microns per hour. This project will develop a charge-free, high flux/fluence nitrogen atom beam for the growth of III-V nitride materials which can replace existing plasma-based tools. With higher growth rates of high quality material over larger areas, systems based on the MIDJET will have with application to the fabrication of high power/high temperature semiconductor devices and blue illumination sources (including those for flat panel displays).

这个小企业创新研究第二阶段项目将开发一个中性，高通量/注量氮原子束源，用于大面积III-V族氮化物半导体材料的高速生长。拟议的来源是基于专有的MID-JET技术。该技术采用涡流包含的无电极放电，而不是传统源中常用的电介质管。 MIDJET技术利用5000 ℃的温度产生1021个氮原子已被证明。这比目前可用的来源产生的高2-3个数量级。它特别适用于金属有机化学气相沉积（MOCVD）系统，在该系统中，它既可以实现高生长速率，又可以消除氨的使用。 MIDJET将用于MOCVD反应器，并演示该系统以每小时至少10微米的速度生长氮化镓的能力。 该项目将开发一种无电荷、高通量/注量氮原子束，用于生长III-V族氮化物材料，可取代现有的等离子体工具。随着高质量材料在更大面积上的更高生长速率，基于MIDJET的系统将应用于高功率/高温半导体器件和蓝色照明光源（包括平板显示器）的制造。