NIRT: Nanoscale Organic Circuits and Sensors

NIRT：纳米级有机电路和传感器

• 批准号: 0210698
• 负责人: Ananth Dodabalapur
• 金额: $ 160万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-08-01 至 2007-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0210698&HistoricalAwards=false
• 关键词: NIRT; Nanoscale; Organic; Circuits; Sensors

AbstractThis proposal was received in response to Nanoscale Science and Engineering initiative, NSF 01-157, category NIRT. It focuses on organic semiconductor based nanoscale transistors, a particularly important area of activity where much remains to be understood and discovered. Organic nanoscale transistors make use of fabrication approaches ranging from molecular self-assembly to advanced nanolithography. This, together with the considerable flexibility in designing and synthesizing a range of semiconducting materials offers hope that such devices may one day be components in a new generation of electronic circuits. The ability to confine and manipulate electric charges on the spatial scale of a molecule is an important advantage for molecular electronics. The proposed project aims at combining self-assembly and advanced nanolithography to realize two families of nanoscale transistor devices that will enable the systematic evaluation of these devices as components in electronic circuits. Crucial to the study is the use of advanced high k dielectrics in organic nano-transistors. This will lower the operating voltage of the devices as well as permit the induction of very large densities of charge, which in turn has been shown to open up new domains in charge transport with associated applications. The project will involve device characterization by conventional methods as well as by scanning probe methods. Additionally, it will involve extensive characterization of interfaces between organic semiconductors and gate insulators, and morphological characterization of self-assembled organic layers with a lateral resolution down to 1 nm. Large-area organic transistors have been shown in the recent past to have unique properties such as chemical sensing and light-emission. The chemical sensing aspects of nanotransistors will be examined in detail for the first time This study will combine chemical design of semiconductors with receptor groups to bind specific analytes with detailed characterization of the chemical nature of the interaction between semiconductor and analyte. Among other properties of nanoscale transistors that will be explored is superconductivity. Superconductivity has been observed recently in large-area polymer transistors and among the suggested applications of such transistors includes quantum information processing. Finally, a new approach to fabricate circuits is proposed in which the organic nano-transistor circuitry is compatible with Si-circuitry. This architecture permits (in principle) the sharing of functionality between the Si circuitry and the organic circuitry. The key aspect of the fabrication scheme is the use of an up-side down approach to fabricate organic circuitry, in which the interconnects are defined first followed by the gate level and finally the source-drain level. Thus the fragile molecular materials are not exposed to harsh processing environments.

摘要此提案是针对纳米级科学与工程倡议的回应，NSF 01-157，NIRT类别。它着重于基于有机半导体的纳米级晶体管，这是一个特别重要的活动领域，在其中仍然有许多待理解和发现的活动。有机纳米级晶体管利用从分子自组装到晚期纳米印刷的制造方法。这以及在设计和合成一系列半导体材料时具有相当大的灵活性，可以希望这样的设备有一天可能是新一代电子电路中的组件。在分子的空间尺度上限制和操纵电荷的能力对于分子电子产品是重要的优势。拟议的项目旨在将自组装和先进的纳米光刻结合起来，以实现两个纳米级晶体管设备的家族，这将使这些设备成为电子电路中的组件的系统评估。这对研究至关重要的是在有机纳米晶体管中使用先进的高K介质。这将降低设备的运行电压，并允许诱导非常大的电荷电压，这反过来又显示出与相关应用程序开放的新域。该项目将涉及通过常规方法以及扫描探针方法的设备表征。此外，它将涉及有机半导体和栅极绝缘子之间的界面以及自组装有机层的形态表征，横向分辨率低于1 nm。在最近的过去显示，大区域有机晶体管具有独特的特性，例如化学传感和光发射。首次将详细检查纳米递质的化学感应方面，本研究将将半导体的化学设计与受体组结合，以结合特定的分析，并详细表征半导体和分析物之间相互作用的化学性质。在将要探索的纳米级晶体管的其他特性中，是超导性。最近在大面积聚合物晶体管中观察到了超导性，在此类晶体管的建议应用中，包括量子信息处理。最后，提出了一种新的制造电路方法，其中有机纳米透射电路与Si-Circuitry兼容。该体系结构允许（原则上）SI电路和有机电路之间的功能共享。制造方案的关键方面是使用向上倾斜的方法来制造有机电路，其中首先定义互连，然后定义栅极级别，最后是源水平。因此，脆弱的分子材料不会暴露于严酷的加工环境中。