NIRT: Nanoscale Organic Circuits and Sensors

NIRT：纳米级有机电路和传感器

• 批准号: 0210698
• 负责人: Ananth Dodabalapur
• 金额: $ 160万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-08-01 至 2007-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0210698&HistoricalAwards=false
• 关键词: NIRT; Nanoscale; Organic; Circuits; Sensors

AbstractThis proposal was received in response to Nanoscale Science and Engineering initiative, NSF 01-157, category NIRT. It focuses on organic semiconductor based nanoscale transistors, a particularly important area of activity where much remains to be understood and discovered. Organic nanoscale transistors make use of fabrication approaches ranging from molecular self-assembly to advanced nanolithography. This, together with the considerable flexibility in designing and synthesizing a range of semiconducting materials offers hope that such devices may one day be components in a new generation of electronic circuits. The ability to confine and manipulate electric charges on the spatial scale of a molecule is an important advantage for molecular electronics. The proposed project aims at combining self-assembly and advanced nanolithography to realize two families of nanoscale transistor devices that will enable the systematic evaluation of these devices as components in electronic circuits. Crucial to the study is the use of advanced high k dielectrics in organic nano-transistors. This will lower the operating voltage of the devices as well as permit the induction of very large densities of charge, which in turn has been shown to open up new domains in charge transport with associated applications. The project will involve device characterization by conventional methods as well as by scanning probe methods. Additionally, it will involve extensive characterization of interfaces between organic semiconductors and gate insulators, and morphological characterization of self-assembled organic layers with a lateral resolution down to 1 nm. Large-area organic transistors have been shown in the recent past to have unique properties such as chemical sensing and light-emission. The chemical sensing aspects of nanotransistors will be examined in detail for the first time This study will combine chemical design of semiconductors with receptor groups to bind specific analytes with detailed characterization of the chemical nature of the interaction between semiconductor and analyte. Among other properties of nanoscale transistors that will be explored is superconductivity. Superconductivity has been observed recently in large-area polymer transistors and among the suggested applications of such transistors includes quantum information processing. Finally, a new approach to fabricate circuits is proposed in which the organic nano-transistor circuitry is compatible with Si-circuitry. This architecture permits (in principle) the sharing of functionality between the Si circuitry and the organic circuitry. The key aspect of the fabrication scheme is the use of an up-side down approach to fabricate organic circuitry, in which the interconnects are defined first followed by the gate level and finally the source-drain level. Thus the fragile molecular materials are not exposed to harsh processing environments.

摘要本研究是在纳米尺度科学与工程计划（NSF 01-157，类别NIRT）中提出的。它侧重于基于有机半导体的纳米级晶体管，这是一个特别重要的活动领域，仍有许多有待了解和发现。有机纳米级晶体管的制造方法从分子自组装到先进的纳米光刻。这一点，再加上设计和合成一系列半导体材料的相当大的灵活性，使这种器件有一天可能成为新一代电子电路的组成部分。在分子的空间尺度上限制和操纵电荷的能力是分子电子学的一个重要优势。该项目旨在结合自组装和先进的纳米光刻技术来实现两个纳米级晶体管器件家族，从而能够系统地评估这些器件作为电子电路中的组件。这项研究的关键是在有机纳米晶体管中使用先进的高k介电体。这将降低器件的工作电压，并允许感应非常大的电荷密度，这反过来又被证明在电荷传输和相关应用中开辟了新的领域。该项目将包括通过传统方法以及扫描探针方法对器件进行表征。此外，它将涉及有机半导体和栅极绝缘体之间界面的广泛表征，以及自组装有机层的形态表征，其横向分辨率低至1nm。近年来，大面积有机晶体管已被证明具有独特的性能，如化学传感和光发射。纳米晶体管的化学传感方面将首次被详细研究。这项研究将结合半导体的化学设计和受体群，结合特定的分析物，详细描述半导体和分析物之间相互作用的化学性质。纳米级晶体管的其他特性将被探索的是超导性。超导性最近在大面积聚合物晶体管中被观察到，这种晶体管的建议应用包括量子信息处理。最后，提出了一种有机纳米晶体管电路与硅电路兼容的新型电路制作方法。这种架构允许（原则上）在硅电路和有机电路之间共享功能。制造方案的关键方面是使用上下方向的方法来制造有机电路，其中首先定义互连，然后定义栅极电平，最后定义源漏电平。因此，易碎的分子材料不会暴露在恶劣的加工环境中。