课题基金 / 基金详情

Improving the design and performance of polymer thin-film transistors for circuit applications.

Improving the design and performance of polymer thin-film transistors for circuit applications.
改进电路应用聚合物薄膜晶体管的设计和性能。
批准号:
1407932
负责人:
Ananth Dodabalapur
金额:
$35.04万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2014
资助国家:
美国
项目状态:
已结题
起止时间:
2014-07-15 至 2017-06-30

项目摘要

项目成果

Ananth Dodabalapur的其他基金

相似基金

相关文献

中文摘要
翻译
摘要标题:非技术性描述:聚合物薄膜晶体管是一种电路元件,其半导体材料不是硅或非晶硅,而是聚合物。 这些组件正在积极地用于各种应用,包括柔性显示器、生物相容性电子器件和大面积电子器件。 聚合物晶体管对这些应用的吸引力来自于简单的制造方法和低成本,其中许多应用是柔性的。 可以通过诸如喷墨印刷的简单工艺来存款聚合物半导体,其中油墨包含聚合物。 打印机定义了半导体沉积的区域。 还需要存款绝缘层和导体来完成制造过程。 这项研究的目的是改进聚合物晶体管的设计,使其性能更好:具有更高的速度和更好的开关特性。为了做到这一点,我们将研究电荷如何在这种聚合物中移动,这样我们就可以设计出提高它们速度的方法,从而使晶体管切换得更快。我们将开发新的和改进的测量方法,以便更深入地了解晶体管的工作原理。 这些改进的聚合物晶体管将用于构建逻辑电路,如触发器和移位寄存器,以了解它们在电路中的表现。 这一点很重要,因为大多数实际应用都涉及到包含许多元件的电路的构建。 该研究成果将影响柔性和可印刷电子领域。技术说明:本项目将分析采用聚合物半导体的新型场效应晶体管器件结构,目标是实现大幅改善的器件和电路性能。 除了提高迁移率和速度外,还将注意旨在降低工作电压的器件设计。 该项目将详细介绍施主-受主聚合物中霍尔迁移率的测量,并使用霍尔效应沿着时间分辨电流-电压测量,以获得这些聚合物半导体中电荷传输的详细表征和理解。 我们已经开发出的方法来表征设备的时间尺度范围从100纳秒到许多秒,将采用沿着与霍尔效应测量。 迄今为止在聚合物半导体中已经实现的一些最高迁移率在3-15 cm 2/V-s范围内,具有更高的迁移率是可能的。 这些相对较大的迁移率将导致增强的载流子离域,这将被详细描述,从而提高对传输和器件物理的理论理解。 我们还将开发先进的器件结构,包括新的栅极绝缘体组合和源极/漏极材料,使用优化的工艺条件来改善分子有序性,从而提高迁移率和工作寿命。我们将演示低电压,高速时钟时序电路,如D触发器和移位寄存器。 这些新的和改进的设备和电路,将与他们构建将有助于印刷电子领域。
英文摘要
Abstract Title: Improving the design and performance of polymer thin-film transistors for circuit applications.Nontechnical Description: Polymer thin-film transistors are circuit components in which the semiconductor material is not silicon or amorphous silicon, but a polymer. Such components are being actively pursued for a variety of applications including flexible displays, biocompatible electronics, and large-area electronics. The attractiveness of polymer transistors for these applications, many of which are flexible, stem from simple fabrication methods and low costs. It is possible to deposit a polymer semiconductor by a simple process such as inkjet printing, in which the ink contains the polymer. The printer defines the area where the semiconductor is deposited. It is also necessary to deposit insulating layers and conductors to complete the fabrication process. The aim of the proposed research is to improve the design of polymer transistors so that they perform better: possess higher speed and better switching characteristics. To do this, we will study how charges move in such polymers so that we can devise ways to increase their speeds so that the transistor will switch faster. We will develop new and improved measurements so we can get a deeper understanding of transistor operation. These improved polymer transistors will be used to build logic circuits such as flip-flops and shift registers to see how they perform in a circuit. This is important since most practical applications involve the construction of circuits involving many components. The results of this research will impact the fields of flexible and printable electronics.Technical Description: This project will analyze new field-effect transistor device structures that will employ polymer semiconductors with the goal of realizing vastly improved device and circuit performance. In addition to increasing the mobility and speed, attention will be paid to device designs aimed at lowering the operating voltage. This project will address in detail the measurement of Hall mobility in donor-acceptor polymers and use the Hall Effect along with time-resolved current-voltage measurements to get a detailed characterization and understanding of charge transport in these polymeric semiconductors that show much promise. We have developed methods to characterize devices at timescales ranging from 100 ns to many seconds which will be employed along with Hall Effect measurements. Some of the highest mobilities that have been hitherto achieved in polymer semiconductors are in the 3-15 cm2/V-s range, with higher mobilities possible. These relatively large mobilities will result in enhanced carrier delocalization, which will be characterized in detail, leading to an improved theoretical understanding of transport and device physics. We will also develop advanced device structures that will involve new gate insulator combinations and source/drain materials, the use of optimized process conditions to improve molecular ordering and therefore mobilities and operating lifetime. We will demonstrate low-voltage, high speed clocked sequential circuits such as D-Flip Flops and shift registers. These new and improved devices and the circuits that will be constructed with them will help the field of printed electronics.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
I-Corps: Fourth Wall Optics
  • 批准号:
    2019568
  • 项目类别:
    Standard Grant
  • 资助金额:
    $5.0万
  • 财政年份:
    2020
  • 负责人:
    Ananth Dodabalapur
  • 依托单位:
EAGER: Nanomodular Systems for Efficient Light Emission from a Heterogeneous Integration of Polymers, Two-Dimensional Semiconductors and Insulators
  • 批准号:
    1938179
  • 项目类别:
    Standard Grant
  • 资助金额:
    $29.0万
  • 财政年份:
    2019
  • 负责人:
    Ananth Dodabalapur
  • 依托单位:
Technological Challenges for Hybrid Flexible Electronics and Photonics Workshop to be held in April 2010 at Arlington, VA
  • 批准号:
    0965495
  • 项目类别:
    Standard Grant
  • 资助金额:
    $6.64万
  • 财政年份:
    2010
  • 负责人:
    Ananth Dodabalapur
  • 依托单位:
Device Physics of Organic Transistor Chemical Vapor Sensors
  • 批准号:
    1028184
  • 项目类别:
    Standard Grant
  • 资助金额:
    $32.56万
  • 财政年份:
    2010
  • 负责人:
    Ananth Dodabalapur
  • 依托单位:
国内基金
海外基金
Applications of AI in Market Design
  • 批准号:
    --
  • 项目类别:
    外国青年学者研 究基金项目
  • 资助金额:
    --
  • 批准年份:
    2024
  • 负责人:
    Manshu Khanna
  • 依托单位:
基于“Design-Build-Test”循环策略的新型紫色杆菌素组合生物合成研究
  • 批准号:
  • 项目类别:
    省市级项目
  • 资助金额:
    --
  • 批准年份:
    2021
  • 负责人:
  • 依托单位:
在噪声和约束条件下的unitary design的理论研究
  • 批准号:
    12147123
  • 项目类别:
    专项基金项目
  • 资助金额:
    18万元
  • 批准年份:
    2021
  • 负责人:
    顾炎武
  • 依托单位:
基于贝叶斯网络可靠度演进模型的城市雨水管网整体优化设计理论研究
  • 批准号:
    51008191
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    20.0万元
  • 批准年份:
    2010
  • 负责人:
    刘兴坡
  • 依托单位: