SBIR Phase I: High Sensitivity, Tunable GaN/AlGaN Multiple Quantum Well UV Photodetectors

该小型企业创新研究（SBIR）第一阶段项目旨在开发基于III族氮化物材料系统氮化铝镓的高灵敏度固态日盲光电二极管。紫外线探测器用于水处理厂、自动电弧焊接系统和监测大气臭氧消耗。本项目的目标是开发可调谐、高效率的氮化镓砷/氮化铝镓多量子阱紫外光电二极管，利用顺序共振隧穿来提高载流子收集效率和探测器响应时间。多量子阱探测器将改善氮化物探测器的特性，特别是在日盲波长区域。 在这一波长范围内，人们对火焰探测、紫外光刻、空间和军事应用（包括导弹探测）表现出了巨大的商业兴趣。

This Small Business Innovation Research (SBIR) Phase I project is directed toward the development of highly sensitive, solid-state, solar-blind photodiodes based on the group III-nitride material system, aluminum gallium nitride. Ultraviolet detectors are used in water treatment plants, automated arc-welding systems, and the monitoring of atmospheric ozone depletion. The objective of the proposed project is to develop tunable, high efficiency, Gallium Arsenide Nitride/ aluminum gallium nitride multiple quantum well UV photodiodes utilizing sequential resonant tunneling to enhance carrier collection efficiency and detector response time.The multiple quantum well detectors will improve the characteristics of nitride detectors specifically in the solar blind wavelength region. Significant commercial interest has been expressed in this wavelength region for flame detection, ultraviolet photolithography, space and military applications include missile detection.