STTR Phase I: Epitaxial Nanostructured AlGaN for High Efficiency UV Emitters

这项小型企业技术转移研究第一阶段项目旨在开发一种高效率、高功率的基于藻类的半导体发光二极管（LED），工作波长为300纳米或更短，用于广泛的应用，包括空气和水净化、聚合物固化、荧光光谱、安全光通信以及生物和化学危害监测。这些器件将采用分子束外延（MBE）技术，在大直径衬底上实现低成本、高产量的生产。氮化镓铝紫外光源提供了紧凑、轻量、低成本、低功耗光电系统的可能性，这将使新一代系统的应用包括生物检测、非视距隐蔽通信、灭菌、空气和水净化。如果开发出一种低成本、长寿命、紫外线辐射低于280纳米的led，仅在水净化方面的应用就可以代表一个非常大的市场。该奖项是根据2009年美国复苏和再投资法案（公法111-5）资助的。

This Small Business Technology Transfer Research Phase I project is directed toward the development of a high-efficiency and high-power AlGaN-based semiconductor light emitting diode (LED), operating at 300nm or shorter, for a wide range of applications including air and water purification, polymer curing, fluorescent spectroscopy, secure optical communications and biological and chemical hazard monitoring. These devices will be developed using molecular beam epitaxy (MBE) for low-cost and high-yield production on large-diameter substrates. Aluminum Gallium Nitride UltraViolet optical sources offer the possibility of compact, light-weight, low-cost, low-power-consumption optoelectronic systems that would enable a new generation of systems for applications that include biodetection, non-line-of-sight covert communications, sterilization, and air and water purification. If a low-cost and long-life LEDs with UV light emission below 280 nm is developed the application to water purification alone could represent a very large market.This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).