SBIR Phase I: Vacuum Ultraviolet Spectroscopic Ellipsometer for Semiconductor Lithography

这个小型企业创新研究(SBIR)第一阶段项目将测试真空紫外线(VUV)光谱椭偏(SE)测量的一种新方法，用于半导体光刻应用中的过程控制和监测。它建立在利用平面光栅衍射在可见波长实现SE测量的已证明成功的基础上。对于真空紫外光中的SE测量，有必要使用不需要在检测系统中使用片状偏振元件的圆锥衍射几何。这使得可以建造锥形衍射-研磨幅度光偏振计(CD-GDOAP)，它是VUV-SE中的分析/检测系统。ACD-GDOAP通过截取四个或更多个色散的衍射锥，可以在不移动部件的情况下测量VUV中全光谱范围内的光的偏振态。VUV-SE将：(I)在140-280 nm的光谱范围内工作，(Ii)没有移动部件，(Iii)提供高时间分辨率。在第一阶段，我们建议通过研究(I)锥形衍射几何结构、(Ii)偏振检测的稳健性和(Iii)真空紫外光中光学元件的性能来表征实验室面包板CD-GDOAP的性能。如果成功，它将带来用于半导体加工的紧凑、高速的VUV-SE。研究的潜在商业应用基于CD-GDOAP的拟议的SE将允许在单个仪器中实时测量157、193和248 nm的VUV光刻应用。目前还没有商业上可用的仪器(用于生产设施)可以访问所有这些波长。该项目的成功完成将确保通过中科院与主要半导体计量设备公司发展的业务关系，迅速进入市场。

This Small Business Innovation Research (SBIR) Phase I project will test a novel method forVacuum Ultraviolet (VUV) spectroscopic ellipsometry (SE) measurements for process controland monitoring in semiconductor lithography applications. It builds on the demonstratedsuccess of employing planar grating diffraction to achieve SE measurements in the visiblewavelengths. For SE measurements in the VUV, it is necessary to employ conicaldiffraction geometries which do not require sheet-type polarizing elements in thedetection system. This permits the construction of a Conical Diffraction- GratingDivision of Amplitude Photopolarimeter (CD-GDOAP) that is the analyzer/detection system inthe VUV-SE. By intercepting four or more dispersed orders of the cone of diffraction, aCD-GDOAP can measure the polarization state of light over the full spectrum in the VUVwith no moving parts. The VUV-SE will: (i) operate in the 140-280 nm spectral range, (ii)have no moving parts, and (iii) provide high temporal resolution. In Phase I, we proposeto characterize the performance of a laboratory breadboard CD-GDOAP by investigating (i)conical diffraction geometries, (ii) robustness of polarization detection, and (iii)performance of optical components in the VUV. If successful, it will lead to a compact,high-speed VUV-SE for use in semiconductor processing.Potential Commercial Applications of the ResearchThe proposed SE based on CD-GDOAP will permit real-time measurements for VUV lithographyapplications at 157, 193, and 248 nm in a single instrument. Presently there are nocommercially available instruments (used in production facilities) that can access all ofthese wavelengths. Successful completion of this project will ensure rapid entry into themarketplace, through the business relationship that CRI is developing with majorsemiconductor metrology equipment companies.