SBIR Phase I: Vacuum Ultraviolet Spectroscopic Ellipsometer for Semiconductor Lithography

SBIR 第一阶段：用于半导体光刻的真空紫外光谱椭偏仪

• 批准号: 0215258
• 负责人: Daniel Hampton
• 金额: $ 10万
• 依托单位: Containerless Research, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-07-01 至 2002-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0215258&HistoricalAwards=false
• 关键词: SBIR; Phase; Vacuum; Ultraviolet; Spectroscopic

This Small Business Innovation Research (SBIR) Phase I project will test a novel method forVacuum Ultraviolet (VUV) spectroscopic ellipsometry (SE) measurements for process controland monitoring in semiconductor lithography applications. It builds on the demonstratedsuccess of employing planar grating diffraction to achieve SE measurements in the visiblewavelengths. For SE measurements in the VUV, it is necessary to employ conicaldiffraction geometries which do not require sheet-type polarizing elements in thedetection system. This permits the construction of a Conical Diffraction- GratingDivision of Amplitude Photopolarimeter (CD-GDOAP) that is the analyzer/detection system inthe VUV-SE. By intercepting four or more dispersed orders of the cone of diffraction, aCD-GDOAP can measure the polarization state of light over the full spectrum in the VUVwith no moving parts. The VUV-SE will: (i) operate in the 140-280 nm spectral range, (ii)have no moving parts, and (iii) provide high temporal resolution. In Phase I, we proposeto characterize the performance of a laboratory breadboard CD-GDOAP by investigating (i)conical diffraction geometries, (ii) robustness of polarization detection, and (iii)performance of optical components in the VUV. If successful, it will lead to a compact,high-speed VUV-SE for use in semiconductor processing.Potential Commercial Applications of the ResearchThe proposed SE based on CD-GDOAP will permit real-time measurements for VUV lithographyapplications at 157, 193, and 248 nm in a single instrument. Presently there are nocommercially available instruments (used in production facilities) that can access all ofthese wavelengths. Successful completion of this project will ensure rapid entry into themarketplace, through the business relationship that CRI is developing with majorsemiconductor metrology equipment companies.

该小型企业创新研究（SBIR）第一阶段项目将测试一种用于半导体光刻应用中工艺控制和监控的真空紫外（VUV）光谱椭圆偏振（SE）测量的新方法。它建立在采用平面光栅衍射实现可见光波段SE测量的成功基础上。对于真空紫外的SE测量，有必要在检测系统中采用不需要片式偏振元件的锥形衍射几何结构。这就允许构造锥形衍射光栅分幅光偏振计（CD-GDOAP），它是VUV-SE中的分析/检测系统。通过截取衍射锥的四个或更多个色散级，aCD-GDOAP可以在没有移动部件的情况下测量VUV中全光谱范围内的光的偏振状态。VUV-SE将：（i）在140-280 nm光谱范围内工作，（ii）没有移动部件，以及（iii）提供高时间分辨率。在第一阶段，我们建议通过研究（i）锥形衍射几何形状、（ii）偏振检测的鲁棒性和（iii）VUV中光学元件的性能来表征实验室实验板CD-GDOAP的性能。如果成功的话，它将导致一个紧凑的，高速VUV-SE用于半导体processing.Potential商业应用的researchThe建议SE的基础上CD-GDOAP将允许实时测量VUV lithographyapplications在157，193，和248 nm在一个单一的仪器。目前还没有商业上可用的仪器（用于生产设施），可以访问所有这些波长。该项目的成功完成将确保通过CRI与主要半导体计量设备公司发展的业务关系快速进入市场。