SBIR Phase II: Vacuum Ultraviolet Spectroscopic Ellipsometer for Semiconductor Lithography

SBIR 第二阶段：用于半导体光刻的真空紫外光谱椭偏仪

• 批准号: 0321715
• 负责人: Daniel Hampton
• 金额: $ 50万
• 依托单位: Containerless Research, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-12-01 至 2006-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0321715&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Vacuum; Ultraviolet

This Small Business Innovation Research (SBIR) Phase II project will provide a novel, patented sensor of the polarization properties of light for operation in the vacuum ultraviolet spectral range, from ~ 120 to 200 nm. The instrument is a complete polarimeter that measures all four of the Stokes parameters of polarized light. It enables new semiconductor metrology applications and measurements with high precision and accuracy that are not achievable by rotating analyzer ellipsometry. The $30B semiconductor equipment market is continuously challenged to meet changing requirements with decreasing dimensions and thickness of structures on chips. The G-DOAP instrument meets key requirements of the industry for vacuum ultraviolet metrology tools. It also brings new capabilities to surface science investigations in many fields through the product for this market that we will offer. This technology can accelerate progress along the International Roadmap for Semiconductors, which cites VUV tools as a key need.

该小型企业创新研究（SBIR）第二阶段项目将提供一种新颖的专利传感器，用于在真空紫外光谱范围内（约120至200 nm）操作的光偏振特性。该仪器是一个完整的偏振计，测量偏振光的所有四个斯托克斯参数。它能够实现新的半导体计量应用和测量，具有旋转分析仪椭圆偏振法无法实现的高精度和准确度。300亿美元的半导体设备市场不断面临挑战，以满足不断变化的需求，降低芯片上结构的尺寸和厚度。G-DOAP仪器满足真空紫外计量工具行业的关键要求。它还通过我们将为该市场提供的产品为许多领域的表面科学研究带来了新的能力。这项技术可以加速沿着国际半导体路线图的进展，该路线图将VUV工具列为关键需求。