MRI: Acquisition of a Cathodoluminescence System for Research in III-Nitride Nanostructures

MRI：获取用于研究 III 族氮化物纳米结构的阴极发光系统

• 批准号: 0216055
• 负责人: Leonid Chernyak
• 金额: $ 10.17万
• 依托单位: The University of Central Florida Board of Trustees
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-08-15 至 2004-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0216055&HistoricalAwards=false
• 关键词: MRI; Acquisition; Cathodoluminescence; System; Research

0216055ChernyakThe PIs propose the acquisition of a state-of-the-art cathodoluminescence instrument which will enable nano-scale resolution optical measurements in-situ in a Scanning Electron Microscope (SEM). The Gatan MonoCL3 system for high-resolution cathodoluminescence (CL) imaging and spectroscopy will be integrated into a Philips XL3O TMP SEM operating in the PI's laboratory. The SEM by itself has been extensively employed in Electron Beam Induced Current (EBIC) and in-situ electrical measurements of III-Nitride nanostructures. The cathodoluminescence setup is critical, since it provides nanoscale information on optical properties, composition, and defect distribution.The CL instrument is equipped with a high efficiency collector, which is optimized for the SEM, and transfers light to an integrated spectrometer. Therefore, CL signals at the single photon level can be detected and low electron beam currents be used. The spatial resolution in CL measurements is determined by the range (penetration depth) of electrons from the SEM beam in the material, which depends on the accelerating voltage. Thus, a sampling range of 10 nm is achieved in III-Nitrides with a voltage of ~ 1 keV.The cathodoluminescence spectroscopy system will significantly enhance cross-departmental research projects focused on III-Nitride semiconductors and novel materials. These include studies of the fundamental effects, induced by electron injection in GaN and related compounds, as well as device applications. For instance, the efficiency of GaN photodetectors is determined by minority carrier transport, which will be investigated by combining in-situ electrical and cathodoluminescence measurements in the SEM.The broader impact of the new equipment will be the deeper understanding of electron interaction with semiconductors and nanostructrures as well as the integration of research and education in the graduate and undergraduate learning environment. Acquisition of the CL system will foster several research programs in advanced materials, which are currently funded or under consideration for funding, as well as partnership with industry. Drs. Chernyak and Schulte have established major activity [I -9] related to the "UV-Florida" program, which unites efforts of Uniroyal Optoelectronics and several Florida Universities, including the University of Central Florida, in the development of efficient A1GaN-based multiple quantum well light emitting diodes. Since Uniroyal has specifically expressed an interest in the proposed cathodoluminescence setup, there are clear benefits for this academia-industry partnership.The new instrumentation enables outstanding research and education opportunities for students in nanoscale experimental techniques. The "UV-Florida" program currently supports 5 graduate students whose rotations have been coordinated by the PI. It is anticipated that at least 15 more faculty and students (including undergraduates) will use the equipment. Knowledge of the state-of-the-art cathodoluminescence applications will broaden the students' career options with the high-tech companies in the Central Florida 14-corridor.

0216055 Chernyak PI建议购买最先进的阴极发光仪器，该仪器将在扫描电子显微镜（SEM）中实现纳米级分辨率的原位光学测量。用于高分辨率阴极发光（CL）成像和光谱学的Gatan MonoCL 3系统将集成到PI实验室中运行的Philips XL 3 O TMP SEM中。SEM本身已被广泛用于电子束感应电流（EBIC）和III-氮化物纳米结构的原位电测量。阴极发光装置是关键，因为它提供了光学性质，成分和缺陷分布的纳米级信息。CL仪器配备了一个高效收集器，该收集器针对SEM进行了优化，并将光传输到集成光谱仪。因此，可以检测到单光子水平的CL信号，并使用低电子束电流。CL测量中的空间分辨率由来自SEM束的电子在材料中的范围（穿透深度）决定，这取决于加速电压。因此，在电压约为1 keV的III-氮化物中实现了10 nm的采样范围。阴极发光光谱系统将显著增强专注于III-氮化物半导体和新型材料的跨部门研究项目。其中包括GaN和相关化合物中电子注入引起的基本效应的研究，以及器件应用。例如，GaN光电探测器的效率由少数载流子传输决定，这将通过结合SEM中的原位电学和阴极发光测量来研究。新设备的更广泛影响将是对电子与半导体和纳米结构相互作用的更深入理解，以及研究生和本科生学习环境中的研究和教育的整合。CL系统的收购将促进先进材料的几个研究项目，这些项目目前正在资助或正在考虑资助，以及与工业界的合作伙伴关系。Chernyak和Schulte博士已经建立了与“UV-佛罗里达”计划相关的主要活动[I-9]，该计划将Uniroyal光电公司和几所佛罗里达大学（包括中央佛罗里达大学）的努力联合起来，开发高效的基于A1 GaN的多量子阱发光二极管。由于Uniroyal特别表示对阴极发光装置感兴趣，因此这种纳米级工业合作伙伴关系有明显的好处。新仪器为纳米级实验技术的学生提供了出色的研究和教育机会。“UV佛罗里达”计划目前支持5名研究生，他们的轮换由PI协调。预计至少还有15名教师和学生（包括本科生）将使用这些设备。最先进的阴极发光应用的知识将扩大学生的职业选择与高科技公司在中央佛罗里达14走廊。