Electrical mitigation of radiation-induced defects in AlGaN/GaN photovoltaic detectors

AlGaN/GaN 光伏探测器中辐射引起的缺陷的电气缓解

• 批准号: 1802208
• 负责人: Leonid Chernyak
• 金额: $ 32.5万
• 依托单位: The University of Central Florida Board of Trustees
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2018
• 资助国家: 美国
• 起止时间: 2018-08-15 至 2022-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1802208&HistoricalAwards=false
• 关键词: Electrical; mitigation; radiation; induced; defects

Non-technical: Ultraviolet photodetectors have many uses, such as chemical and biological analysis or flame detection. Damage by energetic particles degrades the sensitivity of ultraviolet photodetectors in harsh radiation environments. This project will lead to a dramatic increase in the recovery of photodetectors based on gallium nitride (GaN). This outcome will be achieved by electrical tailoring of a fundamental property of GaN, the electron diffusion length, by in-situ charge injection under applied voltage. Photodetector sensitivity will recover completely and return to the original state prior to irradiation. The project will advance the fundamental understanding of the nature of point and extended defects in GaN-based semiconductors and devices. The project will integrate research and education at the graduate and undergraduate levels and features an active industrial partner.Technical: This project focuses on electrical mitigation of irradiation-induced defects by charge injection into ultraviolet photodetectors based on gallium nitride (GaN). The ultimate aim is to produce radiation hard and efficient devices. This project hinges on the PI's previous findings that charge injection into p-type GaN leads to considerable changes in the material's electronic properties, particularly the carrier diffusion length. These changes result in an order of magnitude enhancement of the photodetector quantum efficiency. It is therefore possible to improve performance of photodetectors, affected by radiation, using short pulses of solid-state forward-bias charge injection into GaN p-i-n devices. The project will lead to a better understanding of the interaction between wide gap semiconductors and highly energetic particles, including electrons, gamma-ray photons, and protons, as well as of the nature of radiation-induced defects. Charge injection will result in enhanced minority electron diffusion length in the top p-type absorption layer of a photodetector, thus increasing the quantum efficiency for the device and "healing" the adverse impact of gamma-rays, protons, electrons and other radiation types. A unique combination of electrical, optical and structural studies in the PI's lab will shed light on the mechanism, which is responsible for the effect of interest. Studies of minority carrier diffusion length and lifetime will be carried out in independent experiments using electron beam-induced current and ultrafast time-resolved cathodoluminescence at various temperatures. Polychromatic continuous-wave cathodoluminescence will be employed for assessment of irradiation impact on threading dislocation density in GaN. Finally, deep level transient spectroscopy will allow studies of radiation-induced point defects. The ultimate goal is to correlate charge injection regimes (current; voltage; duration) and irradiation doses, thus proceeding towards control of photodetector performance and recovery from radiation damage by purely electrical means.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术性：紫外光探测器有许多用途，如化学和生物分析或火焰探测。高能粒子对紫外光电探测器的损伤会降低其在恶劣辐射环境中的灵敏度。该项目将导致基于氮化镓（GaN）的光电探测器的回收率大幅提高。这一结果将通过对GaN的基本性质（电子扩散长度）进行电气定制来实现，该电子扩散长度通过在施加电压下的原位电荷注入来实现。光电探测器的灵敏度将完全恢复，并恢复到辐照前的原始状态。该项目将推进对GaN基半导体和器件中点缺陷和扩展缺陷性质的基本理解。该项目将整合研究生和本科生水平的研究和教育，并拥有一个活跃的工业合作伙伴。技术：该项目的重点是通过电荷注入到基于氮化镓（GaN）的紫外光探测器中来减轻辐照引起的缺陷。最终目标是生产出抗辐射和高效的设备。该项目取决于PI先前的发现，即电荷注入p型GaN会导致材料的电子特性发生相当大的变化，特别是载流子扩散长度。这些变化导致光电探测器量子效率的数量级增强。因此，有可能改善受辐射影响的光电探测器的性能，使用固态正向偏置电荷注入GaN p-i-n器件的短脉冲。该项目将使人们更好地了解宽禁带半导体与高能粒子（包括电子、伽马射线光子和质子）之间的相互作用，以及辐射引起的缺陷的性质。电荷注入将导致光电探测器的顶部p型吸收层中的增强的少数电子扩散长度，从而增加器件的量子效率并“治愈”伽马射线、质子、电子和其他辐射类型的不利影响。PI实验室的电学、光学和结构研究的独特组合将揭示机制，这是感兴趣的效果的原因。少数载流子扩散长度和寿命的研究将在独立的实验中进行，使用电子束感应电流和超快时间分辨阴极射线发光在各种温度下。多色连续波阴极发光将用于评估照射对GaN中的穿透位错密度的影响。最后，深能级瞬态光谱学将允许辐射诱导的点缺陷的研究。最终目标是关联电荷注入制度（电流;电压;持续时间）和辐照剂量，从而对光电探测器性能的控制和从辐射损伤的恢复进行纯电气手段。该奖项反映了NSF的法定使命，并已被认为是值得通过使用基金会的智力价值和更广泛的影响审查标准进行评估的支持。

项目成果

Impact of Electron Injection and Temperature on Minority Carrier Transport in Alpha-Irradiated ß-Ga 2 O 3 Schottky Rectifiers

电子注入和温度对 Alpha 辐照的 -Ga 2 O 3 肖特基整流器中少数载流子输运的影响

• DOI: 10.1149/2.0101907jss
• 发表时间: 2019
• 期刊: ECS Journal of Solid State Science and Technology
• 影响因子: 2.2
• 作者: Modak, Sushrut;Chernyak, Leonid;Khodorov, Sergey;Lubomirsky, Igor;Yang, Jiancheng;Ren, Fan;Pearton, Stephen J.
• 通讯作者: Pearton, Stephen J.

Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- and 10 MeV proton-irradiated Si-doped β -Ga 2 O 3 Schottky rectifiers

18 MeV α 粒子和 10 MeV 质子辐照 Si 掺杂 β -Ga 2 O 3 肖特基整流器中非平衡载流子动力学的电子束探测

• DOI: 10.1063/5.0052601
• 发表时间: 2021
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Modak, Sushrut;Chernyak, Leonid;Schulte, Alfons;Xian, Minghan;Ren, Fan;Pearton, Stephen J.;Lubomirsky, Igor;Ruzin, Arie;Kosolobov, Sergey S.;Drachev, Vladimir P.
• 通讯作者: Drachev, Vladimir P.

Impact of electron injection on carrier transport and recombination in unintentionally doped GaN

• DOI: 10.1063/5.0017742
• 发表时间: 2020-08-28
• 期刊: JOURNAL OF APPLIED PHYSICS
• 影响因子: 3.2
• 作者: Modak, Sushrut;Chernyak, Leonid;Dashevsky, Zinovi
• 通讯作者: Dashevsky, Zinovi

Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga 2 O 3 Schottky Rectifiers

电子注入对 10 MeV 质子辐照 β-Ga 2 O 3 肖特基整流器中少数载流子输运的影响

• DOI: 10.1149/2162-8777/ab902b
• 发表时间: 2020
• 期刊: ECS Journal of Solid State Science and Technology
• 影响因子: 2.2
• 作者: Modak, Sushrut;Chernyak, Leonid;Khodorov, Sergey;Lubomirsky, Igor;Ruzin, Arie;Xian, Minghan;Ren, Fan;Pearton, Stephen J.
• 通讯作者: Pearton, Stephen J.

Impact of radiation and electron trapping on minority carrier transport in p -Ga 2 O 3

辐射和电子俘获对p -Ga 2 O 3 中少数载流子输运的影响

• DOI: 10.1063/5.0096950
• 发表时间: 2022
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Modak, Sushrut;Schulte, Alfons;Sartel, Corinne;Sallet, Vincent;Dumont, Yves;Chikoidze, Ekaterine;Xia, Xinyi;Ren, Fan;Pearton, Stephen J.;Ruzin, Arie
• 通讯作者: Ruzin, Arie