Modeling of Nanoscale MOSFETs

纳米级 MOSFET 建模

• 批准号: 0218008
• 负责人: Dragica Vasileska
• 金额: $ 23.99万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-10-01 至 2005-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0218008&HistoricalAwards=false
• 关键词: Modeling; Nanoscale; MOSFETs

The purpose of the proposed research effort is to develop methodology whichallows simulation of effects playing an important role in nano-scaledevices, within the framework of existing device simulators. The importantunderlying mechanisms are, on one hand, quantum effects such as tunnelingand quantization, and, on the other hand, many-body effects, electron-ioninteractions and single-dopant effects. The goal of the project is toinclude these effects into existing models and codes in such a way, thattheir influence on device performance is accurately represented, whilesimulations can be made at a computational cost comparable to that ofexisting particle-based device simulators. The basic approach to achievethis goal consists of the use of novel forms of effective quantum potentialsand quantum versions of existing particle-based approaches to simulateshort-range many-body interactions. Comparison will be made withexperimental data provided by the Nanostructures Research Group at ASU, andIntel and Motorola. The calibrated tools can help device designers infabricating optimal device structures with a reduced cost. The educationaleffort of this project will be closely tied to the proposed researchactivities. This will be accomplished via specially developedinterdisciplinary courses in a classical as well as a distance learningformat, and through the direct participation of students in the researchproject on the graduate as well as the undergraduate level. Coursematerials will be developed for this purpose and will be placed on theComputational Electronics Hub that is being developed as part of an existingNSF sponsored project.

拟议的研究工作的目的是开发一种方法，允许在现有设备模拟器的框架内模拟在纳米级设备中发挥重要作用的效应。重要的潜在机制一方面是量子效应，如隧道和量子化，另一方面是多体效应，电子-离子相互作用和单掺杂剂效应。该项目的目标是以这样一种方式将这些影响包括到现有的模型和代码中，从而准确地表示它们对设备性能的影响，同时可以以与现有基于粒子的设备模拟器相当的计算成本进行模拟。实现这一目标的基本方法包括使用新形式的有效量子势和现有基于粒子的方法的量子版本来模拟短程多体相互作用。将与亚利桑那州立大学纳米结构研究小组、英特尔和摩托罗拉提供的实验数据进行比较。校准的工具可以帮助器件设计人员以更低的成本构建最佳的器件结构。本项目的教育工作将与拟议的研究活动密切相关。这将通过专门开发的跨学科课程和远程学习形式来实现，并通过学生直接参与研究生和本科生的研究项目来实现。课程材料将为此目的而开发，并将放置在计算电子中心，该中心正在开发中，作为现有nsf赞助项目的一部分。