Modeling of Nanoscale MOSFETs

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The purpose of the proposed research effort is to develop methodology whichallows simulation of effects playing an important role in nano-scaledevices, within the framework of existing device simulators. The importantunderlying mechanisms are, on one hand, quantum effects such as tunnelingand quantization, and, on the other hand, many-body effects, electron-ioninteractions and single-dopant effects. The goal of the project is toinclude these effects into existing models and codes in such a way, thattheir influence on device performance is accurately represented, whilesimulations can be made at a computational cost comparable to that ofexisting particle-based device simulators. The basic approach to achievethis goal consists of the use of novel forms of effective quantum potentialsand quantum versions of existing particle-based approaches to simulateshort-range many-body interactions. Comparison will be made withexperimental data provided by the Nanostructures Research Group at ASU, andIntel and Motorola. The calibrated tools can help device designers infabricating optimal device structures with a reduced cost. The educationaleffort of this project will be closely tied to the proposed researchactivities. This will be accomplished via specially developedinterdisciplinary courses in a classical as well as a distance learningformat, and through the direct participation of students in the researchproject on the graduate as well as the undergraduate level. Coursematerials will be developed for this purpose and will be placed on theComputational Electronics Hub that is being developed as part of an existingNSF sponsored project.