NSF\CONACyT: Spatially Resolved Characterization of Nano-Porous SiC Layers

该基金为一项研究项目提供资金，其目标是促进对基于热激发发光效应的新型非接触和非破坏性表征技术的理解和知识，该技术适用于全尺寸块状碳化硅（SiC）晶圆和外延薄膜的快速成像。这项新技术获得的结果将与其他空间分辨分析工具相关，包括光致发光成像、扫描声学显微镜、原子力显微镜和扫描电子显微镜。本研究的目的是对SiC衬底和外延膜之间的纳米多孔缓冲层的作用有一个基本的认识，通过降低SiC薄膜中的缺陷浓度和改善器件的操作参数来提高材料质量。所获得的理解和知识将为克服阻碍sic基器件广泛应用于高功率/高频和光电子应用的技术障碍提供指导。该项目完成后，将直接惠及SiC晶圆和器件制造商。结果应该促进整个行业采用这种新的计量方法，最终适用于在线过程控制。作为主要的SiC晶圆和外延层生产商之一，Sterling半导体公司对这种类型的计量表示了浓厚的兴趣，并为大学团队提供了预表征的2”和3”直径的研究级SiC晶圆的实物支持。预计该项目将为美国公司提供更具成本效益的质量表征工艺，同时改善SiC器件的参数。该项目是南佛罗里达大学建立强大的碳化硅技术研究计划的一个综合步骤。可用于该计划的设施包括用于外延SiC生长的化学气相沉积系统和位于大学洁净室的先进的最先进的表征设备。相信该项目将吸引具有不同背景的高素质研究生。该项目为研究生提供了一个与行业专家会面和合作的独特机会，将对工程教育产生非常积极的影响。该项目是基于南佛罗里达大学（佛罗里达州坦帕市）、国家理工学院（墨西哥）和行业专业人士（斯特林半导体）之间的国际合作，他们在碳化硅生长和表征方面拥有互补的专业知识。该计划的结果将发表在相关期刊上，并在主要的国际会议上发表。其中一些将被纳入大学院系开发的新研究生课程。

This grant provides funding for a research project whose goal is to advance the understanding and knowledge to develop a new non-contact and non-destructive characterization technique based on the effect of thermally stimulated luminescence applicable for fast imaging of the full-size bulk silicon carbide (SiC) wafers and epitaxial films. The results acquired by this new technique will be correlated with other spatially resolved analytical tools, including photoluminescence mapping, scanning acoustic microscopy, atomic force microscopy and scanning electron microscopy. The objective of the research is to develop a fundamental understanding of the role of nano-porous buffer layers between the SiC substrate and the epitaxial films as a means to upgrading of the material quality by reducing concentration of defects in the SiC films and improvement of operational parameters of devices. The understanding and knowledge acquired will provide guidance to overcome the technical barriers that have hindered the widespread application of SiC-based devices for high-power/high-frequency and optoelectronic applications. The project, when completed, will directly benefit SiC wafer and device manufacturers. The results should promote the industry-wide adoption of this new metrology applicable eventually for in-line process control. One of the major SiC wafers and epi-layers producers, Sterling Semiconductors has expressed a deep interest in this type of the metrology and offered in-kind support to the university group with pre-characterized 2" and 3" diameter research-grade SiC wafers. It is anticipated that the project will provide U.S. companies with more cost-effective quality characterization processes while simultaneously improving parameters of SiC devices. The project is an integrated step towards the building a strong research program on SiC technology at the University of South Florida. The facilities available for the program include a chemical vapor deposition system for epitaxial SiC growth and advanced state-of-the-art characterization equipment located at the university clean room. It is believed that the program will attract quality graduate students with diverse background. The program provides a unique opportunity for the graduate students to meet and work with experts from industry, and will have highly positive impact to engineering education. The project is based on the international cooperation between faculties of the University of South Florida (Tampa, Florida), National Politechnic Institute (Mexico) and professionals in industry (Sterling Semiconductors) possessing a complimentary expertise in SiC growth and characterization. The results of the program will be published in referred journals and presented at the major international conferences. Some of them will be included to new graduate courses developed by university faculties.