NSF\CONACyT: Spatially Resolved Characterization of Nano-Porous SiC Layers

该补助金为一个研究项目提供资金，该项目的目标是促进理解和知识，以开发一种新的非接触和非破坏性表征技术，该技术基于适用于全尺寸块状碳化硅（SiC）晶片和外延膜快速成像的热激发光效应。通过这种新技术获得的结果将与其他空间分辨分析工具，包括光致发光映射，扫描声学显微镜，原子力显微镜和扫描电子显微镜。 本研究的目的是发展的SiC衬底和外延膜之间的纳米多孔缓冲层的作用的一个基本的理解，作为一种手段，以提高材料质量，通过减少在SiC薄膜中的缺陷浓度和设备的操作参数的改善。 获得的理解和知识将提供指导，以克服技术障碍，这些障碍阻碍了SiC基器件在高功率/高频和光电应用中的广泛应用。 该项目完成后，将直接使SiC晶片和器件制造商受益。结果应促进全行业采用这种新的计量适用于最终在线过程控制。作为主要的SiC晶片和外延层生产商之一，Sterling Semiconductors对这种计量技术表示出浓厚的兴趣，并向大学集团提供了实物支持，提供了预先表征的2”和3”直径研究级SiC晶片。预计该项目将为美国公司提供更具成本效益的质量表征工艺，同时改善SiC器件的参数。该项目是在南佛罗里达大学建立一个强大的SiC技术研究计划的一个综合步骤。该计划提供的设施包括用于外延SiC生长的化学气相沉积系统和位于大学洁净室的先进的最先进的表征设备。据信，该计划将吸引具有不同背景的优质研究生。该计划为研究生提供了一个独特的机会，以满足和来自行业的专家工作，并将有非常积极的影响工程教育。该项目是基于南佛罗里达大学（坦帕，佛罗里达），国家理工学院（墨西哥）和专业人士在工业（斯特林半导体）之间的国际合作，拥有碳化硅生长和特性的互补专业知识。该计划的结果将发表在参考期刊上，并在主要的国际会议上发表。其中一些将被纳入大学院系开发的新的研究生课程。

This grant provides funding for a research project whose goal is to advance the understanding and knowledge to develop a new non-contact and non-destructive characterization technique based on the effect of thermally stimulated luminescence applicable for fast imaging of the full-size bulk silicon carbide (SiC) wafers and epitaxial films. The results acquired by this new technique will be correlated with other spatially resolved analytical tools, including photoluminescence mapping, scanning acoustic microscopy, atomic force microscopy and scanning electron microscopy. The objective of the research is to develop a fundamental understanding of the role of nano-porous buffer layers between the SiC substrate and the epitaxial films as a means to upgrading of the material quality by reducing concentration of defects in the SiC films and improvement of operational parameters of devices. The understanding and knowledge acquired will provide guidance to overcome the technical barriers that have hindered the widespread application of SiC-based devices for high-power/high-frequency and optoelectronic applications. The project, when completed, will directly benefit SiC wafer and device manufacturers. The results should promote the industry-wide adoption of this new metrology applicable eventually for in-line process control. One of the major SiC wafers and epi-layers producers, Sterling Semiconductors has expressed a deep interest in this type of the metrology and offered in-kind support to the university group with pre-characterized 2" and 3" diameter research-grade SiC wafers. It is anticipated that the project will provide U.S. companies with more cost-effective quality characterization processes while simultaneously improving parameters of SiC devices. The project is an integrated step towards the building a strong research program on SiC technology at the University of South Florida. The facilities available for the program include a chemical vapor deposition system for epitaxial SiC growth and advanced state-of-the-art characterization equipment located at the university clean room. It is believed that the program will attract quality graduate students with diverse background. The program provides a unique opportunity for the graduate students to meet and work with experts from industry, and will have highly positive impact to engineering education. The project is based on the international cooperation between faculties of the University of South Florida (Tampa, Florida), National Politechnic Institute (Mexico) and professionals in industry (Sterling Semiconductors) possessing a complimentary expertise in SiC growth and characterization. The results of the program will be published in referred journals and presented at the major international conferences. Some of them will be included to new graduate courses developed by university faculties.