NSF\CONACyT: Spatially Resolved Characterization of Nano-Porous SiC Layers

这笔赠款为一个研究项目提供资金，该项目的目标是增进理解和知识，开发一种基于热激发光效应的新型非接触式和非破坏性表征技术，适用于全尺寸块状碳化硅（SiC）晶圆和外延膜的快速成像。这项新技术获得的结果将与其他空间分辨分析工具相关，包括光致发光图、扫描声学显微镜、原子力显微镜和扫描电子显微镜。 该研究的目的是对 SiC 衬底和外延膜之间的纳米多孔缓冲层的作用有一个基本的了解，作为通过降低 SiC 薄膜中的缺陷浓度和改善器件的运行参数来升级材料质量的手段。 所获得的理解和知识将为克服阻碍碳化硅基器件在高功率/高频和光电应用中广泛应用的技术障碍提供指导。 该项目建成后将直接惠及碳化硅晶圆和器件制造商。结果将促进这种新计量方法在全行业范围内的采用，最终适用于在线过程控制。作为主要的 SiC 晶圆和外延层生产商之一，Sterling Semiconductors 对此类计量表示了浓厚的兴趣，并通过预先表征的 2" 和 3" 直径研究级 SiC 晶圆向大学团体提供了实物支持。预计该项目将为美国公司提供更具成本效益的质量表征流程，同时改进碳化硅器件的参数。该项目是南佛罗里达大学朝着建立强大的碳化硅技术研究项目迈出的综合性一步。该计划可用的设施包括用于外延 SiC 生长的化学气相沉积系统和位于大学洁净室的先进的最先进的表征设备。相信该计划将吸引具有不同背景的优质研究生。该项目为研究生提供了与行业专家会面和合作的独特机会，将对工程教育产生非常积极的影响。该项目基于南佛罗里达大学（佛罗里达州坦帕）、国家理工学院（墨西哥）和拥有 SiC 生长和表征方面互补专业知识的行业专业人士（Sterling Semiconductors）之间的国际合作。该计划的结果将发表在相关期刊上，并在主要国际会议上发表。其中一些将被纳入大学教师开发的新研究生课程中。

This grant provides funding for a research project whose goal is to advance the understanding and knowledge to develop a new non-contact and non-destructive characterization technique based on the effect of thermally stimulated luminescence applicable for fast imaging of the full-size bulk silicon carbide (SiC) wafers and epitaxial films. The results acquired by this new technique will be correlated with other spatially resolved analytical tools, including photoluminescence mapping, scanning acoustic microscopy, atomic force microscopy and scanning electron microscopy. The objective of the research is to develop a fundamental understanding of the role of nano-porous buffer layers between the SiC substrate and the epitaxial films as a means to upgrading of the material quality by reducing concentration of defects in the SiC films and improvement of operational parameters of devices. The understanding and knowledge acquired will provide guidance to overcome the technical barriers that have hindered the widespread application of SiC-based devices for high-power/high-frequency and optoelectronic applications. The project, when completed, will directly benefit SiC wafer and device manufacturers. The results should promote the industry-wide adoption of this new metrology applicable eventually for in-line process control. One of the major SiC wafers and epi-layers producers, Sterling Semiconductors has expressed a deep interest in this type of the metrology and offered in-kind support to the university group with pre-characterized 2" and 3" diameter research-grade SiC wafers. It is anticipated that the project will provide U.S. companies with more cost-effective quality characterization processes while simultaneously improving parameters of SiC devices. The project is an integrated step towards the building a strong research program on SiC technology at the University of South Florida. The facilities available for the program include a chemical vapor deposition system for epitaxial SiC growth and advanced state-of-the-art characterization equipment located at the university clean room. It is believed that the program will attract quality graduate students with diverse background. The program provides a unique opportunity for the graduate students to meet and work with experts from industry, and will have highly positive impact to engineering education. The project is based on the international cooperation between faculties of the University of South Florida (Tampa, Florida), National Politechnic Institute (Mexico) and professionals in industry (Sterling Semiconductors) possessing a complimentary expertise in SiC growth and characterization. The results of the program will be published in referred journals and presented at the major international conferences. Some of them will be included to new graduate courses developed by university faculties.