SPIN ELECTRONICS: III-V/Mn Ferromagnetic Semiconductors for Device Applications

SPIN ELECTRONICS：用于设备应用的 III-V/Mn 铁磁半导体

• 批准号: 0224206
• 负责人: Hong Luo
• 金额: $ 30万
• 依托单位: SUNY at Buffalo
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-11-01 至 2006-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0224206&HistoricalAwards=false
• 关键词: SPIN; ELECTRONICS; III; Mn; Ferromagnetic

0224206LuoThis proposal was received in response to the Spin Electronics for the 21st Century Initiative, Program Solicitation NSF 02-036. The proposal focuses on growth, characterization and device studies of III-V/Mn materials and their heterostructures. The goal of this program is to develop ferromagnetic resonant interband tunneling diodes (FRITD) and polarization tunable infrared light emitting diodes. In order to develop optimized materials for these devices, and to demonstrate proof of principle operation, device structures will be fabricated and tested in parallel with the materials growth to provide direct feedback to the materials effort. Preliminary studies at the University at Buffalo (UB) of structural, transport/magneto-transport, optical and magnetic properties of the constituent materials for these devices have revealed several interesting problems associated with the incorporation of magnetic Mn++ ions at high sheet densities. More importantly, it was found that the structural, optical, transport and magnetic properties of these materials are closely connected. These studies demonstrate the need for designing materials from the atomic level so that electrical transport, optical and magnetic properties are simultaneously optimized; this is one of the key tasks of this program. Specifically, to tackle these complex problems, it is proposed to form a multidisciplinary research team to carry out comprehensive studies of III-V-based ferromagnetic materials/structures, fundamental properties, spin injection/interface effects and devices. In this proposed work, the University at Buffalo group will: 1) fabricate systematic sets of samples of GaAs/Mn, GaSb/Mn, and InAs/Mn digital alloys, in which submonolayers of Mn are inserted in the III-V lattice; 2) explore the magnetic, electrical transport, optical properties and structural quality as a function of growth conditions; 3) optimize growth conditions to produce the highest Curie temperatures; 4) fabricate and test device structures.The program is formulated to maximize student involvement in multidisciplinary research by engaging engineering and physics students working together to reach common goals. It will utilize existing infrastructure, both for collaborative research and for student interactions, which has been established for the on-going spintronic materials development project supported by the Defense Advanced Research Project Agency (DARPA) focusing on other materials. A total of three full-time graduate students will be supported in this program, a substantial effort made possible by the synergism with the related work. The success of this program will have immediate impact on the key problems in the area of spintronics, namely, improving the Curie temperature and producing materials suitable for practical devices and spin injection into semiconductor heterostructures. Combined with the other materials currently studied in the DARPA-supported project, the materials effort at UB represents one of the strongest in the country. The device fabrication and characterization will lead the way in resolving bottlenecks in materials research related to spin-injection involving III-V materials, and the possibility of electron (rather than hole) spin injection.

0224206罗本提案是响应21世纪世纪自旋电子学倡议，计划征求NSF 02-036。 该提案的重点是III-V/Mn材料及其异质结构的生长，表征和器件研究。 本计画的目标是发展铁磁共振带间穿隧二极体（FRITD）及偏振可调红外线发光二极体。 为了开发这些器械的优化材料，并证明原理操作的证据，将在材料生长的同时制造和测试器械结构，以提供对材料工作的直接反馈。 布法罗大学（UB）对这些器件的组成材料的结构、传输/磁传输、光学和磁性的初步研究揭示了与在高片密度下掺入磁性Mn++离子相关的几个有趣的问题。更重要的是，人们发现，这些材料的结构，光学，输运和磁性是密切相关的。 这些研究表明需要从原子水平设计材料，以便同时优化电传输，光学和磁性;这是该计划的关键任务之一。 具体而言，为了解决这些复杂的问题，建议组建一个多学科研究团队，对III-V基铁磁材料/结构、基本性质、自旋注入/界面效应和器件进行全面研究。 在这项工作中，布法罗大学的研究小组将：1）制造GaAs/Mn、GaSb/Mn和InAs/Mn数字合金的系统样品组，其中Mn的亚单层插入III-V晶格中; 2）探索作为生长条件的函数的磁、电输运、光学性质和结构质量; 3）优化生长条件以产生最高的居里温度; 4）制造和测试设备结构。该计划的制定是为了最大限度地提高学生参与多学科研究，通过从事工程和物理学生一起工作，以达到共同的目标。 它将利用现有的基础设施，既用于合作研究，也用于学生互动，这些基础设施是为国防高级研究计划局（DARPA）支持的正在进行的自旋电子材料开发项目建立的，重点是其他材料。 共有三名全日制研究生将在该计划中得到支持，这是一项与相关工作协同作用的巨大努力。该计划的成功将对自旋电子学领域的关键问题产生直接影响，即提高居里温度和生产适用于实际器件的材料以及自旋注入半导体异质结构。结合目前在DARPA支持的项目中研究的其他材料，UB的材料工作代表了该国最强大的材料之一。器件的制造和表征将引领解决与涉及III-V材料的自旋注入相关的材料研究中的瓶颈，以及电子（而不是空穴）自旋注入的可能性。