Spin Electronics: A new Spin for the Nitrides: Can Room Temperature Ferromagnetism be obtained in (Ga,Mn)N?

自旋电子学：氮化物的新自旋：能否在 (Ga,Mn)N 中获得室温铁磁性？

• 批准号: 0224266
• 负责人: Ian Ferguson
• 金额: $ 24万
• 依托单位: Georgia Tech Research Corporation
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-10-01 至 2006-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0224266&HistoricalAwards=false
• 关键词: Spin; Electronics; new; Nitrides; Room

This proposal was received in response to the Spin Electronics for the 21st Century Initiative, Program Solicitation NSF 02-036. The proposal focuses on the development of a room temperature ferromagnetic compound semiconductor material, Ga1-xMnxN, for spintronic devices based on the spin property of electrons. Many advances have been made in developing the materials and devices for III-V compound semiconductor materials doped with manganese (Mn), with Ga1-xMnxAs showing the most promise. However, the low Curie temperatures (Tc) for these materials require potential devices to be operated at temperatures below 77K. There is a need to produce a new class of materials that can operate at, or near, room temperature to facilitate the ease of measurement and the eventual commercialization of this technology. The III-Nitrides will be excellent for this application because recent theoretical predictions show that Ga1-xMnxN could have Tc higher than room temperature. The Ga1-xMnxN can also be integrated into existing base of microelectronics or optoelectronics existing for GaN-based devices.In this work it is proposed to produce Ga1-xMnxN by Metalorganic Chemical Vapor Deposition, the growth technique of choice for GaN based devices. There are no published reports of the growth of Ga1-xMnxN by this growth technique at this time. A systematic study of the growth of Ga1-xMnxN will be completed. Detailed characterization of the physical properties Ga1-xMnxN will be investigated using x-ray analysis, Hall measurements, time resolved photoluminescence, and other techniques. A novel Ga1-xMnxN/Ga1-xAlxN/Ga1-xInxN LED structure will be grown so that spin injection can easily be investigated at room temperature.The broader impact of this work is clear: Spintronic devices that can be operated at or near room temperature will be required if quantum computing based on compound semiconductor materials is going to have a commercial viability in the future.

该提案是根据21世纪自旋电子学倡议，项目征求NSF 02-036收到的。该提案的重点是开发一种室温铁磁化合物半导体材料Ga1-xMnxN，用于基于电子自旋特性的自旋电子器件。掺杂锰（Mn）的III-V型化合物半导体材料的材料和器件的开发已经取得了许多进展，其中Ga1-xMnxAs最有前景。然而，这些材料的低居里温度（Tc）要求潜在器件在低于77K的温度下工作。有必要生产一种可以在室温或接近室温下工作的新型材料，以方便测量和最终实现该技术的商业化。iii -氮化物将非常适合这种应用，因为最近的理论预测表明，Ga1-xMnxN的Tc可能高于室温。Ga1-xMnxN也可以集成到现有的微电子或光电子基础上，用于gan基器件。本文提出采用金属有机化学气相沉积法制备Ga1-xMnxN，这是GaN基器件的首选生长技术。目前还没有发表过用这种生长技术生长Ga1-xMnxN的报道。对Ga1-xMnxN的生长进行了系统的研究。利用x射线分析、霍尔测量、时间分辨光致发光和其他技术，详细表征Ga1-xMnxN的物理性质。本文制备了一种新型的Ga1-xMnxN/Ga1-xAlxN/Ga1-xInxN LED结构，使得自旋注入可以在室温下进行研究。这项工作的广泛影响是明确的：如果基于化合物半导体材料的量子计算在未来具有商业可行性，那么可以在室温或接近室温下操作的自旋电子器件将是必需的。