NER: Fully Self-assembled Nanowire Based Devices
NER:完全自组装的基于纳米线的设备
基本信息
- 批准号:0303801
- 负责人:
- 金额:$ 10万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2003
- 资助国家:美国
- 起止时间:2003-07-15 至 2005-06-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Nanowires are formed by self-assembly during growth of rare earth metal silicides on the silicon (001) surface. They have nanometer scale lateral dimension, show metallic conduction, and survive exposure to air after growth in ultra high vacuum (UHV). They can be grown in parallel arrays, or simple crossed grids. Junctions between nanowires of a variety of geometries spontaneously arise. The objective of this project is to fast track the development of epitaxial nanowire junctions as devices. Electrically addressablenanowires and nanowire junctions will be fabricated and evaluated as to their usefulness as nanowire based devices. In particular, the hope is to develop a fully self-assembled device, from the nanometer scale active area all the way to macroscopic contact pads without the need for manipulation of individual elements. The specific goal will be to demonstrate that it is possible to make a fully self-assembled nanowire based device, and to have electrical measurements on at least one such device within the grant period. There are formidable technical hurdles to be surmounted, foremost among which is the fact that all fabrication steps must be compatible with the UHV processing that is dictated by the nanowire growth step. Growth of the nanowires and in-situ atomic resolution studies will be ongoing. Methods for fabricating electrical contacts, both UHV and non-UHV based, will be explored. Electrical measurements will be done ex-situ on both individual nanowires and nanowire junctions, using a combination of liquid helium cryostats and a new cryogenic probing station.As part of their education and outreach activities, all members involved in developing nanotechnology related teaching materials at different levels that will be appropriate for K-12, as well as undergraduate and graduate education. Concepts for displays suitable for very young schoolchildren will be developed in collaboration with a science museum in Lansing. All of the education and outreach activity is intended to raise the general awareness of nanotechnology at all stages of the educational process. This proposal addresses issues in the area of Nanoscale Structures, Novel Phenomena, and Quantum Control.
纳米线是在硅(001)表面上生长稀土金属硅化物期间通过自组装形成的。它们具有纳米尺度的横向尺寸,显示出金属导电性,并且在超高真空(UHV)中生长后暴露于空气中而存活。它们可以以平行阵列或简单的交叉网格生长。各种几何形状的纳米线之间的结会自发出现。这个项目的目标是快速跟踪外延纳米线结作为器件的发展。电寻址纳米线和纳米线结将被制造和评估其作为基于纳米线的器件的有用性。特别是,希望开发一种完全自组装的器件,从纳米级的有源区一直到宏观的接触垫,而不需要操纵单个元件。具体目标将是证明有可能制造完全自组装的基于纳米线的器件,并在授权期内对至少一个这样的器件进行电气测量。存在需要克服的巨大技术障碍,其中最重要的是所有制造步骤必须与由纳米线生长步骤决定的UHV处理兼容的事实。纳米线的生长和原位原子分辨率的研究将继续进行。将探索制造特高压和非特高压电接触的方法。电子测量将在单个纳米线和纳米线结上进行,使用液氦低温恒温器和新的低温探测站的组合。作为他们的教育和推广活动的一部分,所有成员参与开发不同级别的纳米技术相关教材,这些教材将适合K-12,以及本科和研究生教育。将与兰辛的一家科学博物馆合作开发适合年幼学童的展示概念。所有的教育和推广活动都旨在提高教育过程各个阶段对纳米技术的普遍认识。该提案涉及纳米结构,新现象和量子控制领域的问题。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Jun Nogami其他文献
Identification of Tetramers in Silver Films Grown on the Si(001) Surface at Room Temperature.
室温下 Si(001) 表面生长的银膜中四聚体的鉴定。
- DOI:
10.1021/acs.jpclett.8b02746 - 发表时间:
2018 - 期刊:
- 影响因子:0
- 作者:
Kai Huang;W. S. Huxter;C. V. Singh;Jun Nogami - 通讯作者:
Jun Nogami
sqrt 3 x sqrt 3 -->6 x 6 phase transition on the Au/Si(111) surface.
sqrt 3 x sqrt 3 -->6 x 6 Au/Si(111) 表面上的相变。
- DOI:
10.1103/physrevlett.65.1611 - 发表时间:
1990 - 期刊:
- 影响因子:8.6
- 作者:
Jun Nogami;A. Baski;C. Quate - 通讯作者:
C. Quate
Real-time decision support for air traffic management, utilizing machine learning
利用机器学习为空中交通管理提供实时决策支持
- DOI:
10.1016/0967-0661(96)00113-x - 发表时间:
1996 - 期刊:
- 影响因子:4.9
- 作者:
Jun Nogami;S. Nakasuka;T. Tanabe - 通讯作者:
T. Tanabe
Comparison of the 3 x 1 reconstructions of the Si(111) surface induced by Li and Ag.
Li 和 Ag 诱导的 Si(111) 表面 3 x 1 重建的比较。
- DOI:
10.1103/physrevb.46.13635 - 发表时间:
1992 - 期刊:
- 影响因子:0
- 作者:
Wan Kj;Lin Xf;Jun Nogami - 通讯作者:
Jun Nogami
Indium-induced reconstructions of the Si(111) surface studied by scanning tunneling microscopy.
通过扫描隧道显微镜研究铟诱导的 Si(111) 表面重建。
- DOI:
10.1103/physrevb.36.6221 - 发表时间:
1987 - 期刊:
- 影响因子:0
- 作者:
Jun Nogami;Sang;C. Quate - 通讯作者:
C. Quate
Jun Nogami的其他文献
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{{ truncateString('Jun Nogami', 18)}}的其他基金
Epitaxial Growth of Uniaxially and Biaxially Mismatched Silicide Films on Silicon
硅上单轴和双轴失配硅化物薄膜的外延生长
- 批准号:
0305472 - 财政年份:2003
- 资助金额:
$ 10万 - 项目类别:
Continuing Grant
Electromigration of Metals on the Silicon Surface
硅表面金属的电迁移
- 批准号:
9223764 - 财政年份:1993
- 资助金额:
$ 10万 - 项目类别:
Standard Grant
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