Epitaxial Growth of Uniaxially and Biaxially Mismatched Silicide Films on Silicon

硅上单轴和双轴失配硅化物薄膜的外延生长

• 批准号: 0305472
• 负责人: Jun Nogami
• 金额: $ 43.33万
• 依托单位: Michigan State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-05-15 至 2007-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0305472&HistoricalAwards=false
• 关键词: Epitaxial; Growth; Uniaxially; Biaxially; Mismatched

The goal of this project is greater understanding of epitaxial growth of strained layers when the mismatch between overlayer and substrate is anisotropic. Focus is on the epitaxial growth of rare earth silicides on the silicon (001) surface. Rare earth silicides are ideal test systems, since they provide a wide range of both anisotropic and isotropic mismatches with respect to the Si(001) substrate. The structural and compositional similarity between the silicide phases formed, and the ability to vary the silicide lattice constants by judicious choice of rare earth metal, provide a unique opportunity to study growth behavior as a function of both biaxial and uniaxial lattice mismatch in epitaxially grown films, with other parameters such as surface energy held constant. Another feature in these systems is the fact that silicide nanowires form in the initial stages of growth. Therefore, the research will also test the relative importance of different mechanisms that have been proposed for nanowire formation in diverse materials systems. These issues have rele-vance to the general understanding of strained layer epitaxy, and the specific extension of this understanding to cases where the strain is anisotropic. The results of this research may also help develop ways of growing both better quality nanowires, and better quality metal silicide films in general. %%% This project addresses basic research issues in a topical area of materials science with significant technological relevance. An important feature of the project is the training of graduate students as researchers with skills in several different atomic resolution characterization techniques. Much of the data produced will be visual in nature, which makes it particularly suitable for presentation to a wide range of age groups with a general interest in science and engineering. Material will be developed and integrated into outreach and educational activities in a variety of venues, with the goal of informing the widest possible public about basic research in materials and its relevance to both scientific knowledge and future technological applications.***

本计画的目标是在各向异性的情况下，对应变层的磊晶成长有更深入的了解。重点是在硅（001）表面上外延生长稀土硅化物。稀土硅化物是理想的测试系统，因为它们相对于Si（001）衬底提供宽范围的各向异性和各向同性失配。所形成的硅化物相之间的结构和组成的相似性，以及通过明智地选择稀土金属来改变硅化物晶格常数的能力，提供了一个独特的机会来研究作为外延生长膜中双轴和单轴晶格失配的函数的生长行为，其他参数如表面能保持恒定。这些系统的另一个特征是硅化物纳米线在生长的初始阶段形成。因此，该研究还将测试在不同材料系统中形成纳米线的不同机制的相对重要性。这些问题与应变层外延的一般理解，以及应变各向异性情况下的具体扩展有着直接的关系。这项研究的结果也可能有助于开发更好质量的纳米线和更好质量的金属硅化物薄膜的方法。%%% 该项目涉及材料科学领域的基础研究问题，具有重要的技术相关性。该项目的一个重要特点是培训研究生作为研究人员，掌握几种不同的原子分辨率表征技术。产生的大部分数据将是视觉性质的，这使得它特别适合于向对科学和工程普遍感兴趣的广泛年龄组介绍。将编写材料并将其纳入在各种场所开展的外联和教育活动，目的是让尽可能多的公众了解材料方面的基础研究及其与科学知识和未来技术应用的相关性。