Hybrid Physical-Chemical Vapor Deposition of MgB2 Thin Films
MgB2 薄膜的物理化学混合气相沉积
基本信息
- 批准号:0306746
- 负责人:
- 金额:$ 45万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2003
- 资助国家:美国
- 起止时间:2003-07-01 至 2007-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This research focuses on the in situ deposition of epitaxial MgB2 superconductor thin films and multilayers by hybrid physical-chemical vapor deposition (HPCVD). MgB2 is a conventional superconductor with a high transition temperature of 39 K, promising Josephson junctions like the low-Tc superconductor junctions but operating at 25 K. The PIs have developed the HPCVD technique and grown epitaxial MgB2 films with excellent superconducting and transport properties. This project will further improve the HPCVD technique to make it more controllable and compatible to multilayer deposition for Josephson junctions. The research will model the HPCVD growth conditions, test various reactor configurations, and address various materials issues in the growth mechanism, the suitable tunnel barrier material, and the deposition of multilayer structures. A demonstration of a 25-K Josephson junction suitable for superconducting integrated circuits and a large scale processing technique will have a significant impact on the microelectronics industry. Students trained in this project will be exposed to both physics and materials science and acquire skills important for their careers in materials research in both academic and industrial environments.Non-Technical Abstract This research focuses on the thin film deposition of the newly-discovered MgB2 superconductor. Unlike the unconventional high-Tc superconductors, MgB2 is a conventional superconductor with a high transition temperature of 39 K. This makes it more promising to produce MgB2 Josephson junctions, the most elemental devices for superconducting integrated circuits for ultrafast digital processing. To achieve MgB2Josephson junctions and integrated circuits, a thin film technique compatible with multilayer depositions is required. The PIs have developed an innovative technique, hybrid physical-chemical vapor deposition (HPCVD), to grow epitaxial MgB2 films with excellent superconducting and transport properties. However, the technique is in its very early stage of development and needs improvements. This project will use theoretical modeling to guide the HPCVD improvement, address various materials issues in the film growth, and develop multilayers for Josephson junctions. The success of the project will have a significant impact on the microelectronics industry. Students trained in this project will be exposed to both physics and materials science and acquire skills important for their careers in materials research in both academic and industrial environments.
本研究主要是利用混合式物理化学气相沉积法(HPCVD)原位沉积外延MgB2超导薄膜及多层膜。MgB2是一种传统的超导体,具有39 K的高转变温度,有希望像低Tc超导体结一样形成约瑟夫森结,但工作温度为25 K。PI开发了HPCVD技术,并生长出具有优异超导和输运性能的外延MgB2薄膜。本计画将进一步改善高压化学气相沉积技术,使其更易于控制,并与多层膜约瑟夫森结的沉积相容。该研究将模拟HPCVD生长条件,测试各种反应器配置,并解决生长机制中的各种材料问题,合适的隧道势垒材料和多层结构的沉积。适用于超导集成电路的25K约瑟夫森结的示范和大规模加工技术将对微电子工业产生重大影响。在这个项目中接受培训的学生将接触到物理和材料科学,并获得对他们在学术和工业环境中的材料研究职业生涯至关重要的技能。非技术摘要本研究的重点是新发现的MgB 2超导体的薄膜沉积。 与非常规的高Tc超导体不同,MgB2是具有39 K的高转变温度的常规超导体。这使得生产MgB2约瑟夫森结更有希望,MgB2约瑟夫森结是用于超快数字处理的超导集成电路的最基本器件。为了实现MgB2约瑟夫森结和集成电路,需要与多层沉积兼容的薄膜技术。 PI开发了一种创新技术,混合物理化学气相沉积(HPCVD),以生长具有优异超导和传输性能的外延MgB2薄膜。然而,该技术还处于发展的早期阶段,需要改进。本计画将利用理论模型来指导HPCVD的改良,解决薄膜成长中的各种材料问题,并开发约瑟夫森结的多层膜。该项目的成功将对微电子行业产生重大影响。在这个项目中培训的学生将接触到物理和材料科学,并获得在学术和工业环境中材料研究职业生涯的重要技能。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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第三世代太陽電池研究開発の現状 -シリコン量子ドット・ワイヤを用いた新世代太陽電池-
第三代太阳能电池研发现状 - 采用硅量子点和硅线的新一代太阳能电池 -
- DOI:
- 发表时间:
2010 - 期刊:
- 影响因子:0
- 作者:
山本明保;Marina Putti;Anatolii Polyanskii;Fumitake Kametani;Dmytro Abraimov;Alexander Gurevich;David Larbalestier;Chenggang Zhuang;Xiaoxing Xi;下山淳一;岸尾光二;黒川康良 - 通讯作者:
黒川康良
Fabrication and Radio Frequency Properties of 3-GHz SRF Cavities Coated with MgB2
- DOI:
10.1007/s10948-020-05681-1 - 发表时间:
2020-10-04 - 期刊:
- 影响因子:1.700
- 作者:
Xin Guo;Wenura K. Withanage;Jay R. Paudel;Grigory Eremeev;Fay Hannon;Robert Rimmer;Alireza Nassiri;Xiaoxing Xi - 通讯作者:
Xiaoxing Xi
Xiaoxing Xi的其他文献
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