CONFERENCE: Support of Student Attendees at the Eleventh International Conference on Narrow Gap Semiconductors being held in Buffalo, NY, June 16-20, 2003.

会议：2003 年 6 月 16 日至 20 日在纽约州布法罗举行的第十一届窄隙半导体国际会议上的学生与会者的支持。

• 批准号: 0315976
• 负责人: Junichiro Kono
• 金额: $ 0.35万
• 依托单位: William Marsh Rice University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-05-01 至 2003-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0315976&HistoricalAwards=false
• 关键词: CONFERENCE; Support; Student; Attendees; Eleventh

We are seeking financial support for the Eleventh International Conference on Narrow Gap Semiconductors (NGS-11), which will be held in Buffalo, New York, June 16 - 20, 2003 on the campus of the University at Buffalo, the State University of New York (SUNY). Specifically, we would like to request $3,500 to support student attendance at NGS-11. We will strongly encourage the participation of talented young students from under-represented groups such as women, minorities, and the disabled.The United States has not hosted a NGS Conference since 1995 and it will be very good to bring back this major international conference to this country to expose our researchers to frontier research in this area. Previous NGS Conferences were held in Dallas, U.S.A. (1970), Nice, France (1973), Warsaw, Poland (1977), Linz, Austria (1981), Gaithersburg, U.S.A. (1989), Southampton, U.K. (1992), Santa Fe, U.S.A. (1995), Shanghai, China (1997), Berlin, Germany (1999), and Kanazawa, Japan (2001).This conference will bring together experts to discuss recent advances and discoveries in the science and technology of narrow gap semiconductors and low frequency excitations in semiconductors. Materials systems of primary interest are: 6.1 A III-V semiconductors (InAs, GaSb, AlSb and their alloys), InSb-based alloys and heterostructures (e.g., InSb, InAlSb, InAsSb), ferromagnetic narrow-gap III-V semiconductors (e.g., InMnAs, GaMnSb), II-VI narrow-gap semiconductors (e.g., HgCdTe), II-VI/III-V heterostructures such as CdMnSe/InAs, lead salt (IV-VI) materials and heterostructures (e.g., PbSe, PbTe, PbSe/PbEuSe, PbTe/PbEuTe).In addition to crystal growth/fabrication methods and studies, the program will also cover a broad range of physical phenomena and device applications, including: spin-related effects, infrared sources/detectors, gigahertz and terahertz phenomena and devices, hybrid structures combining semiconductors with superconductors or ferromagnetic metals, mesoscopic phenomena, hot carrier transport, quantum Hall effect, intersubband transitions, and Landau level spectroscopy. The Organizing and Program Committee consists of members who have strong on-going research programs on narrow gap semiconductors. Invited speakers will include many of the best researchers in this field, both from fundamental and applied research areas, including experimentalists and theorists. In addition, Prof. Emmanuel I. Rashba (University at Buffalo, SUNY) and Prof. Herbert Kroemer (University of California, Santa Barbara), two distinguished physicists in this area, have agreed to give the plenary talks of the Conference.During this five-day conference, we plan to have about 15 invited talks and 60 contributed talks as well as approximately 100 posters. We anticipate approximately 200 participants. There will be no parallel sessions. The Conference does not have any time overlap with other conferences devoted to similar topics, and we expect that all the key speakers will be able to come. The requested funding of $3,500 will be used entirely for supporting student participants: partial transportation for selected graduate students. We plan to select seven students with an average support of $500 per student. The students' reports will be included in the final report.

我们正在为将于2003年6月16日至20日在纽约州布法罗市布法罗大学校园内举行的第十一届窄禁带半导体国际会议（NGS-11）寻求财政支持。具体来说，我们想要求3,500美元，以支持学生出席NGS-11。我们将大力鼓励来自妇女、少数民族和残疾人等代表性不足的群体的有才华的年轻学生参加。美国自1995年以来就没有主办过NGS会议，将这一重大国际会议带回美国将是非常好的，使我们的研究人员能够接触到这一领域的前沿研究。前几届NGS会议分别在美国达拉斯（1970年）、法国尼斯（1973年）、波兰华沙（1977年）、奥地利林茨（1981年）、美国盖瑟斯堡（1989年）、英国南安普顿举行。（1992）、美国圣达菲（1995）、中国上海（1997）、德国柏林（1999）和日本金泽（2001）。这次会议将汇集专家讨论窄禁带半导体和半导体低频激发的科学和技术的最新进展和发现。 主要感兴趣的材料系统是：6.1 A III-V族半导体（InAs、GaSb、AlSb及其合金）、InSb基合金和异质结构（例如，InSb、InAlSb、InAsSb）、铁磁窄隙III-V族半导体（例如，InMnAs、GaMnSb）、II-VI族窄隙半导体（例如，HgCdTe）、II-VI/III-V异质结构（例如CdMnSe/InAs）、铅盐（IV-VI）材料和异质结构（例如，PbSe，PbTe，PbSe/PbEuSe，PbTe/PbEuTe）。除了晶体生长/制造方法和研究，该计划还将涵盖广泛的物理现象和器件应用，包括：自旋相关效应、红外源/检测器、千兆赫和太赫兹现象和器件、将半导体与超导体或铁磁金属组合的混合结构、介观现象、热载流子传输、量子霍尔效应子带间跃迁和朗道能级光谱。 组织和计划委员会由在窄禁带半导体方面有强大的持续研究计划的成员组成。受邀演讲者将包括许多最好的研究人员在这一领域，无论是从基础和应用研究领域，包括实验学家和理论家。此外，Emmanuel I. Rashba（纽约州立大学布法罗分校）和赫伯特·克罗默教授（加州大学圣巴巴拉分校）是该领域的两位杰出物理学家，他们已同意在大会的全体会议上发表演讲。在为期五天的会议期间，我们计划举行约15场特邀演讲和60场特邀演讲，以及约100张海报。预计约有200名参与者。将不举行平行会议。本次会议与其他专门讨论类似议题的会议没有任何时间重叠，我们希望所有主要发言者都能出席。所要求的3 500美元资金将完全用于支持学生参与者：部分交通选定的研究生。我们计划选择七名学生，平均每名学生500美元的支持。学生们的报告将包括在期末报告中。