CONFERENCE: Support of Student Attendees at the Eleventh International Conference on Narrow Gap Semiconductors being held in Buffalo, NY, June 16-20, 2003.

会议：2003 年 6 月 16 日至 20 日在纽约州布法罗举行的第十一届窄隙半导体国际会议上的学生与会者的支持。

• 批准号: 0315976
• 负责人: Junichiro Kono
• 金额: $ 0.35万
• 依托单位: William Marsh Rice University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-05-01 至 2003-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0315976&HistoricalAwards=false
• 关键词: CONFERENCE; Support; Student; Attendees; Eleventh

We are seeking financial support for the Eleventh International Conference on Narrow Gap Semiconductors (NGS-11), which will be held in Buffalo, New York, June 16 - 20, 2003 on the campus of the University at Buffalo, the State University of New York (SUNY). Specifically, we would like to request $3,500 to support student attendance at NGS-11. We will strongly encourage the participation of talented young students from under-represented groups such as women, minorities, and the disabled.The United States has not hosted a NGS Conference since 1995 and it will be very good to bring back this major international conference to this country to expose our researchers to frontier research in this area. Previous NGS Conferences were held in Dallas, U.S.A. (1970), Nice, France (1973), Warsaw, Poland (1977), Linz, Austria (1981), Gaithersburg, U.S.A. (1989), Southampton, U.K. (1992), Santa Fe, U.S.A. (1995), Shanghai, China (1997), Berlin, Germany (1999), and Kanazawa, Japan (2001).This conference will bring together experts to discuss recent advances and discoveries in the science and technology of narrow gap semiconductors and low frequency excitations in semiconductors. Materials systems of primary interest are: 6.1 A III-V semiconductors (InAs, GaSb, AlSb and their alloys), InSb-based alloys and heterostructures (e.g., InSb, InAlSb, InAsSb), ferromagnetic narrow-gap III-V semiconductors (e.g., InMnAs, GaMnSb), II-VI narrow-gap semiconductors (e.g., HgCdTe), II-VI/III-V heterostructures such as CdMnSe/InAs, lead salt (IV-VI) materials and heterostructures (e.g., PbSe, PbTe, PbSe/PbEuSe, PbTe/PbEuTe).In addition to crystal growth/fabrication methods and studies, the program will also cover a broad range of physical phenomena and device applications, including: spin-related effects, infrared sources/detectors, gigahertz and terahertz phenomena and devices, hybrid structures combining semiconductors with superconductors or ferromagnetic metals, mesoscopic phenomena, hot carrier transport, quantum Hall effect, intersubband transitions, and Landau level spectroscopy. The Organizing and Program Committee consists of members who have strong on-going research programs on narrow gap semiconductors. Invited speakers will include many of the best researchers in this field, both from fundamental and applied research areas, including experimentalists and theorists. In addition, Prof. Emmanuel I. Rashba (University at Buffalo, SUNY) and Prof. Herbert Kroemer (University of California, Santa Barbara), two distinguished physicists in this area, have agreed to give the plenary talks of the Conference.During this five-day conference, we plan to have about 15 invited talks and 60 contributed talks as well as approximately 100 posters. We anticipate approximately 200 participants. There will be no parallel sessions. The Conference does not have any time overlap with other conferences devoted to similar topics, and we expect that all the key speakers will be able to come. The requested funding of $3,500 will be used entirely for supporting student participants: partial transportation for selected graduate students. We plan to select seven students with an average support of $500 per student. The students' reports will be included in the final report.

我们正在为第十一届窄隙半导体国际会议 (NGS-11) 寻求财政支持，该会议将于 2003 年 6 月 16 日至 20 日在纽约州布法罗市纽约州立大学 (SUNY) 校园举行。具体来说，我们希望申请 3,500 美元来支持学生参加 NGS-11。我们将大力鼓励来自妇女、少数族裔和残疾人等代表性不足的群体的有才华的年轻学生的参与。美国自 1995 年以来就没有主办过 NGS 会议，将这一重要的国际会议带回美国将非常好，让我们的研究人员接触到该领域的前沿研究。历届NGS会议分别在美国达拉斯（1970年）、法国尼斯（1973年）、波兰华沙（1977年）、奥地利林茨（1981年）、美国盖瑟斯堡（1989年）、英国南安普顿（1992年）、美国圣达菲（1995年）、中国上海（1997年）、柏林、德国（1999），以及 日本金泽（2001 年）。本次会议将汇集专家，讨论窄带隙半导体和半导体低频激励科学技术的最新进展和发现。 主要感兴趣的材料系统有： 6.1 A III-V 半导体（InAs、GaSb、AlSb 及其合金）、InSb 基合金和异质结构（例如 InSb、InAlSb、InAsSb）、铁磁窄带隙 III-V 半导体（例如 InMnAs、GaMnSb）、II-VI 窄带隙半导体（例如， HgCdTe）、II-VI/III-V异质结构如CdMnSe/InAs、铅盐（IV-VI）材料和异质结构（例如PbSe、PbTe、PbSe/PbEuSe、PbTe/PbEuTe）。除了晶体生长/制造方法和研究外，该计划还将涵盖广泛的物理现象和器件应用，包括：自旋相关效应、 红外源/探测器、千兆赫和太赫兹现象和设备、半导体与超导体或铁磁金属相结合的混合结构、介观现象、热载流子传输、量子霍尔效应、子带间跃迁和朗道能级光谱。 组织和计划委员会由在窄带隙半导体方面拥有强大的持续研究计划的成员组成。受邀演讲者将包括该领域许多最优秀的研究人员，包括来自基础和应用研究领域的实验学家和理论家。此外，两位该领域杰出的物理学家Emmanuel I. Rashba教授（纽约州立大学布法罗分校）和Herbert Kroemer教授（加州大学圣塔芭芭拉分校）已同意在会议上做大会报告。在为期五天的会议中，我们计划举办约15场特邀报告和60场贡献报告以及约100张海报。我们预计大约有 200 名参与者。不会有平行会议。本次会议与其他专门讨论类似主题的会议没有任何时间重叠，我们希望所有主要发言人都能出席。所申请的 3,500 美元资金将全部用于支持学生参与者：选定的研究生的部分交通费。我们计划选择七名学生，平均为每个学生提供 500 美元的支持。学生的报告将包含在最终报告中。