SBIR Phase I: Activation and Mobility Profiling for III-V Semiconductor Materials

SBIR 第一阶段：III-V 族半导体材料的活化和迁移率分析

• 批准号: 1519796
• 负责人: Abhijeet Joshi
• 金额: $ 15万
• 依托单位: Active Layer Parametrics, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-07-01 至 2015-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1519796&HistoricalAwards=false
• 关键词: SBIR; Phase; Activation; Mobility; Profiling

The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase I project will be the development of a novel analysis tool for III-V semiconductor compounds with immediate impact in Light Emitting Diode (LED) manufacturing and high-mobility channel device industries. Currently, relatively low yields during epitaxial growth of the LED semiconductor layers cause a significant loss to the industry. High mobility integrated devices and LED epitaxial development teams have access to methods that provide partial information and metrology about the semiconductor layers. The system proposed here will provide complete electrical data on the materials and could cut significantly improve the feedback time, resulting in higher yields and lower manufacturing costs.This Small Business Innovation Research Phase I project will build a prototype system to directly measure high-resolution mobility and activation profiles for III-V semiconductors. Currently, electrical profiling methods do not measure mobility profiles of activated materials that form the basis of the III-V semiconductor device industries. Thus, researchers cannot take into account the effect of process variations on the mobility profiles of the electronic materials. This prevents the complete electrical characterization of the material, and the optimization of the material growth/implantation and activation processes. The anticipated outcome of this project is a functional system that will provide better and quicker analysis on electronic materials.

这个小企业创新研究（SBIR）第一阶段项目的更广泛的影响/商业潜力将是为III-V族半导体化合物开发一种新的分析工具，对发光二极管（LED）制造和高迁移率沟道器件行业产生直接影响。 目前，在LED半导体层的外延生长期间相对低的产率对工业造成重大损失。 高迁移率集成器件和LED外延开发团队可以使用提供有关半导体层的部分信息和计量的方法。 本文提出的系统将提供完整的材料电学数据，并可以显著缩短反馈时间，从而提高产量和降低制造成本。这个小型企业创新研究第一阶段项目将建立一个原型系统，直接测量III-V族半导体的高分辨率迁移率和激活曲线。 目前，电分布方法不测量形成III-V族半导体器件工业基础的活化材料的迁移率分布。 因此，研究人员无法考虑工艺变化对电子材料迁移率分布的影响。 这阻碍了材料的完整电特性，以及材料生长/注入和激活过程的优化。该项目的预期成果是建立一个功能系统，对电子材料进行更好、更快的分析。