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Itinerant Spin-Dynamics in Structures of Reduced Dimensionality

降维结构中的巡回自旋动力学

基本信息

批准号：
163472456
负责人：
Professor Dr. Stefan Kettemann
金额：
--
依托单位：
Department of Physics and Earth Sciences
依托单位国家：
德国
项目类别：
Research Grants
财政年份：
2010
资助国家：
德国
起止时间：
2009-12-31 至 2013-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/163472456?language=en
关键词：
Itinerant Spin Dynamics Structures Reduced

项目摘要

In this project we intend to study the spin dynamics and quantum transport in disordered semiconductor quantum wires with spin-orbit coupling using the methods we have developed recently within the project B9 of SFB 508. In particular, we will derive the dependence of the spin relaxation rate and the weak localisation correction to the conductance on the strength and the kind of spin-orbit interaction (linear and cubic Dresselhaus, as well as Rashba coupling), growth direction, width of the quantum wires, mobility and temperature. Furthermore, the result is expected to depend on the smoothness of the transversal confinement of the quantum wires. We are motivated by recent experiments [A1-A7] which report the dimensional reduction of the spin relaxation rate in agreement with our previous results, but are raising new questions, in particular as regards the crossover from diffusive to ballistic wires, and dependence on growth direction and confinement potential. These results call for a nontrivial extension of our previous derivations, which were derived in the diffusive regime.Furthermore, experimental results which were recently interpreted as antilocalisation in magnetic semiconductor quantum wires [A8], require a further extension of the theory in order to be able to calculate the magnetconductivity in these magnetic materials.Motivated by experiments which report a minimal spin relaxation rate at the metal-insulator transition in n-doped GaAs [A9], we will also study the Dyakonov-Perel-spin relaxation in a multifractal state at the Anderson-metal-insulator transition, using an analytical method developed recently

在这个项目中，我们打算使用我们最近在sfb508项目B9中开发的方法，研究具有自旋-轨道耦合的无序半导体量子线中的自旋动力学和量子输运。特别是，我们将推导自旋弛豫速率和电导的弱局部化修正对自旋-轨道相互作用（线性和立方Dresselhaus以及Rashba耦合）的强度和种类、生长方向、量子线宽度、迁移率和温度的依赖关系。此外，预计结果将取决于量子线横向约束的平滑程度。我们的动力来自最近的实验[A1-A7]，这些实验报告了自旋弛豫率的降维，与我们之前的结果一致，但也提出了新的问题，特别是关于从扩散线到弹道线的交叉，以及对生长方向和约束势的依赖。这些结果要求对我们以前的推导进行非平凡的推广，这些推导是在扩散状态下推导的。此外，最近被解释为磁性半导体量子线中的反局域化的实验结果[A8]，需要进一步扩展理论，以便能够计算这些磁性材料中的导电性。在n掺杂GaAs [A9]中，金属-绝缘体跃迁过程中自旋弛豫率最小的实验报道的推动下，我们还将使用最近开发的分析方法研究安德森-金属-绝缘体跃迁过程中多重分形态的dyakonov - perel -自旋弛豫