SENSORS: SOLID STATE INTEGRATED PLATFORM FOR SENSING ARRAYS
SENSORS: SOLID STATE INTEGRATED PLATFORM FOR SENSING ARRAYS
批准号:
0327608
负责人:
Jiri Janata
金额:
$30.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2003
资助国家:
美国
项目状态:
已结题
起止时间:
2003-10-01 至 2006-09-30
中文摘要
摘要本提案的第一个目标是用硅制造一个测试平台芯片(GT03),该芯片将用于测试用于化学传感和有机电子的新型有机半导体。有了这种芯片,就有可能直接将新材料的电子性能参数与作为“金标准”的硅材料进行比较。这种芯片在寻找有机半导体中难以捉摸的“半导体场效应”方面将特别有用。为了在工程和科学界产生广泛的影响,裸片将提供给有兴趣开发有机场效应晶体管和气体传感器的研究小组。将制定统一的测试方案,以便对不同实验室制备的这些材料的性能进行比较。它将扩大用于化学传感的选择性材料的范围。该平台特别适用于可以通过溶剂铸造或升华沉积的有机半导体。以前在传感阵列中单独制造的化学传感芯片和电子芯片将组合在一个芯片上,以绕过两个独立芯片所需的低产量和昂贵的倒装芯片键合步骤。所得到的阵列将在同一芯片上集成CMOS电子电路。它将是最小的、完全集成的、低功耗的气体传感平台,可以集成到现有的便携式电子设备中,例如手机、寻呼机、PDA,以便创建一个动态分布的阵列阵列,即超级阵列。“动态分布”一词意味着单个阵列在空间中的位置不是预先确定的,而是随着携带这种增强型个人电子产品的人四处移动而不断变化的。这项新技术的智力价值在于,它使化学信息获取的新随机范式得以实现。认识到高度专业化的制造设备,如存在于佐治亚理工学院,可能不是大多数研究小组在化学传感领域工作,我们建议使新的传感平台,感兴趣的传感团体在学术界。这种芯片的普及将对化学传感领域产生广泛的影响。感兴趣的团体应联系PI(404 894 4828)或通过电子邮件:jiri.Janata@chemistry.gatech.edu。
英文摘要
ABSTRACTThe first objective of this proposal is to fabricate from silicon a test platform chip (GT03) that will be used for testing of new organic semiconductors for chemical sensing and for organic electronics. With this chip it will be possible to compare directly the electronic performance parameters of the new materials with those of silicon, as the "gold standard". This chip will be particularly useful in the search for the elusive "semiconductor field-effect" in organic semiconductors. In order to achieve a broad impact in the engineering and scientific community the bare chip will be made available to interested research groups developing organic field-effect transistors and gas sensors. A uniform testing protocol will be developed that will allow comparison of properties of these materials prepared in different laboratories. It will expand the range of selective materials proposed for chemical sensing. The platform is particularly suitable for organic semiconductors that can be deposited by either solvent casting or by sublimation. The chemical sensing and electronic chips in sensing arrays that were previously fabricated separately will be combined in one chip in order to by-pass the low-yield and expensive flip-chip bonding step needed for the two separate chips. The resulting array will have CMOS electronic circuitry integrated on the same chip. It will be the smallest, fully integrated, low power sensing platform for gas sensing that could be incorporated into an existing portable electronics, e.g. cell phones, pagers PDA's, in order to create a dynamically distributed array of arrays, i.e. superarrays. The expression "dynamically distributed" implies that the location of the individual arrays in space is not predetermined and that it is continuously changing as the person carrying this enhanced personal electronics moves around. The intellectual merit of this new technology is that it enables the realization of the new, stochastic paradigm of chemical information acquisition. Recognizing that highly specialized fabrication facility, such as exists at the Georgia Tech, may not be available to most research groups working in chemical sensing field we are proposing to make the new sensing platform available to interested sensing groups in academia. Making the chips generally available would have a broad impact on the chemical sensing field. The interested groups should contact the PI (404 894 4828) or by e-mail: jiri.Janata@chemistry.gatech.edu.
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Design of advanced sensing materials
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批准号:0452045
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2005
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负责人:Jiri Janata
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依托单位:
The New Challenges of Chemical and Biological Sensing (Workshop: January 9-10, 2002)
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批准号:0207142
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项目类别:Standard Grant
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资助金额:$8.07万
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财政年份:2002
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负责人:Jiri Janata
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依托单位:
Design of Advanced Sensing Materials
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批准号:0137391
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项目类别:Standard Grant
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资助金额:$36.0万
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财政年份:2002
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负责人:Jiri Janata
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依托单位:
New Sensing Materials Based on Chemical Modulation of Work Function of Conducting Polymers
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批准号:9816017
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项目类别:Continuing Grant
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资助金额:$36.0万
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财政年份:1999
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负责人:Jiri Janata
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依托单位:
The NSF-NATO Program for International Academic-Industrial Exchanges of U.S. Scientists and Engineers (Double-Jump)
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批准号:8606514
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项目类别:Standard Grant
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资助金额:$0.99万
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财政年份:1986
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负责人:Jiri Janata
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依托单位:
Insulated Gate Field Effect Transistor As Polarized Electrode
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批准号:7800637
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项目类别:Continuing Grant
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资助金额:$14.94万
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财政年份:1978
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负责人:Jiri Janata
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依托单位:
海外基金