SBIR Phase I: Diode-Laser Sensors for Real-Time Control of Semiconductor Processing
SBIR Phase I: Diode-Laser Sensors for Real-Time Control of Semiconductor Processing
批准号:
0340422
负责人:
Thomas Owano
金额:
$10.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-01-01 至 2004-06-30
中文摘要
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英文摘要
This Small Business Innovation Research (SBIR)Phase I project proposes to support the development of a real-time, insitu sensor for the monitoring and control of next-generation semiconductor etch tools. The sensor is based on ultrasensitive diode-laser absorption techniques for measurements of important native etch products (HF, DF, CO). This novel sensor system will measure concentrations of native etch products insitu with high sensitivity, accuracy, speed and specificity, eliminating the need for auxiliary etch stoplayers. These auxiliary etch stop layers, which are currently used for control of the etch process, increaselayer capacitance, and hence reduce operating speed of the devices in production.This sensor system has direct commercial impact on the next-generation etch tools and theirprocess capabilities. The real-time control afforded by this sensor system will likely become an industrystandard and become a critical subcomponent of the semiconductor etch tool market. Application toother plasma-based process tools is a natural extension of this technology, as well as extension to otherapplication areas including industrial process control, vehicle engine testing, and atmospheric andenvironmental monitoring.
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