SBIR Phase II: Crystalline Ferroelectrics Combined with Transistor Technology

SBIR 第二阶段：晶体铁电体与晶体管技术相结合

• 批准号: 0349729
• 负责人: Zhiyong Zhao
• 金额: $ 50万
• 依托单位: NGIMAT CO.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-01-15 至 2005-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0349729&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Crystalline; Ferroelectrics

This Small Business Innovative Research Phase II project will focus on developing tunable microwave devices that utilize ferroelectric thin films for their electronic properties. Specifically, barium strontium titanate (BST) thin films are being used to develop new classes of tunable microwave devices, including phase shifters, delay lines and frequency-agile filters. Currently, these ferroelectric devices suffer from two drawbacks: easily formed planar devices demand very large tuning voltages on the order of 100 Volts , while easily tuned parallel plate devices require sophisticated processing techniques. These problems have inhibited the development of commercially viable components. The current project proposes combining silicon based circuitry with ferroelectric devices on the same substrate. For example, a silicon charge pump circuit can be integrated on-chip to provide high tuning voltages for a ferroelectric phase shifter. The voltage will be isolated to the chip and less than 3 Volts would be needed to externally drive the device. Combining silicon semiconductor technology with ferroelectrics will enable development of devices which take advantage of ferroelectric's dielectric properties and overcome the current roadblocks in the way of commercializing these devices. Commercially, a great deal of interest has emerged in the use of ferroelectric thin films in the wireless industry because of the material's ability to dramatically improve the functionality of existing devices. For example, a ferroelectric duplexer is possible which has one third the size of existing duplexers, while using 40% less power. Today's multiband handsets use up to four filters, so the potential for ferroelectrics is tremendous. A key wireless handset manufacturer identified at least six applications for tunable devices inside their telephones. Overall, the wireless telecommunications market has spawned the need for small, low power, high bandwidth microwave components. Over $50 billion of wireless handsets were sold in 2002, with $6 billion being spent on RF semiconductor components. With the trend towards highly functional wireless appliances like PDA's, the demand for wireless components will continue skyrocketing.

这个小型企业创新研究第二阶段项目将专注于开发可调谐微波器件，利用铁电薄膜的电子特性。 具体而言，钛酸锶钡（BST）薄膜正被用于开发新类别的可调谐微波器件，包括移相器，延迟线和频率捷变滤波器。 目前，这些铁电器件有两个缺点：容易形成的平面器件需要大约100伏的非常大的调谐电压，而容易调谐的平行板器件需要复杂的加工技术。 这些问题阻碍了商业上可行的部件的开发。 目前的项目建议将硅基电路与铁电器件结合在同一衬底上。 例如，硅电荷泵电路可以集成在芯片上，以为铁电移相器提供高调谐电压。 电压将与芯片隔离，外部驱动器件所需的电压小于3伏。 将硅半导体技术与铁电体相结合，将能够开发利用铁电体介电特性的器件，并克服目前这些器件商业化的障碍。 在商业上，在无线工业中使用铁电薄膜引起了很大的兴趣，因为该材料能够显着改善现有设备的功能。 例如，铁电晶体是可能的，其具有现有晶体的三分之一的尺寸，同时使用少40%的功率。 今天的多频段手机使用多达四个滤波器，因此铁电体的潜力是巨大的。 一家主要的无线手机制造商确定了至少六种可调设备在其电话中的应用。总体而言，无线电信市场催生了对小型、低功耗、高带宽微波元件的需求。 2002年，无线手机的销售额超过500亿美元，其中60亿美元用于RF半导体元件。 随着PDA等高功能无线设备的发展趋势，对无线组件的需求将继续飙升。