Nanoscale Physics of Nitride Semiconductor Heterostructures for Optical and Electronic Devices

用于光学和电子器件的氮化物半导体异质结构的纳米物理

• 批准号: 0405851
• 负责人: Edward Yu
• 金额: $ 36.56万
• 依托单位: University of California-San Diego
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-07-01 至 2007-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0405851&HistoricalAwards=false
• 关键词: Nanoscale; Physics; Nitride; Semiconductor; Heterostructures

This project aims at a detailed investigation of structural and electronic properties of Group III-nitride semiconductor heterostructures employing scanning probe measurement techniques to characterize electronic properties of nitride semiconductor epitaxial layers with spatial resolution at the submicron to nanometer scale. Included in this effort will be the development and implementation of unique new experimental capabilities for characterization of electronic structure of defects with both nanoscale spatial resolution and resolution in energy enabled by spectrally resolved optical excitation. Efforts in state-of-the-art nanoscale materials characterization will be complemented by a variety of "macroscopic" electrical and optical measurements to enable correlations to be established among nanoscale material properties, electrical and optical behavior at macroscopic length scales, and device performance. This approach is expected to establish a sound basis for development of clear, effective, and well-informed strategies for improvement in material quality and optimization of device performance. Particular emphasis will be placed on investigation of issues relevant to the performance of nitride semiconductor-based optoelectronic devices, to be facilitated by a collaboration with researchers at EMCORE Corporation. Research outcomes expected are relevant to applications that include high-density data storage, displays, solid-state lighting, and communications infrastructure.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new understanding and capabilities in electronic and photonic devices. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. In addition to education of graduate students and researchers in areas of scientific and technological importance, undergraduate students will be afforded opportunities to become involved in state-of-the-art research in electronic materials and nanoscale science and technology.***

本项目旨在详细研究III族氮化物半导体异质结的结构和电子性质，采用扫描探针测量技术来表征具有亚微米到纳米尺度空间分辨率的氮化物半导体外延层的电子性质。这项工作将包括开发和实施独特的新的实验能力，以表征缺陷的电子结构，同时具有纳米级的空间分辨率和由光谱分辨光激发实现的能量分辨率。在最先进的纳米材料表征方面的努力将得到各种“宏观”电学和光学测量的补充，从而能够在纳米材料特性、宏观长度尺度上的电学和光学行为以及器件性能之间建立关联。这种方法有望为制定明确、有效和知情的改进材料质量和优化设备性能的战略奠定坚实的基础。将通过与Emcore公司的研究人员的合作，特别重视与氮化物半导体光电子器件性能相关的问题的调查。预期的研究成果与高密度数据存储、显示器、固态照明和通信基础设施等应用相关。%该项目解决具有高潜在技术相关性的材料科学主题领域的基础研究问题。这项研究将在基础水平上贡献基本材料科学知识，以促进对电子和光子设备的新理解和能力。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训，将研究和教育结合起来。除了对研究生和研究人员进行重要科学技术方面的教育外，本科生还将有机会参与电子材料和纳米科学技术的最新研究。*