Nanoscale Physics of Nitride Semiconductor Heterostructures for Optical and Electronic Devices

用于光学和电子器件的氮化物半导体异质结构的纳米物理

• 批准号: 0405851
• 负责人: Edward Yu
• 金额: $ 36.56万
• 依托单位: University of California-San Diego
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-07-01 至 2007-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0405851&HistoricalAwards=false
• 关键词: Nanoscale; Physics; Nitride; Semiconductor; Heterostructures

This project aims at a detailed investigation of structural and electronic properties of Group III-nitride semiconductor heterostructures employing scanning probe measurement techniques to characterize electronic properties of nitride semiconductor epitaxial layers with spatial resolution at the submicron to nanometer scale. Included in this effort will be the development and implementation of unique new experimental capabilities for characterization of electronic structure of defects with both nanoscale spatial resolution and resolution in energy enabled by spectrally resolved optical excitation. Efforts in state-of-the-art nanoscale materials characterization will be complemented by a variety of "macroscopic" electrical and optical measurements to enable correlations to be established among nanoscale material properties, electrical and optical behavior at macroscopic length scales, and device performance. This approach is expected to establish a sound basis for development of clear, effective, and well-informed strategies for improvement in material quality and optimization of device performance. Particular emphasis will be placed on investigation of issues relevant to the performance of nitride semiconductor-based optoelectronic devices, to be facilitated by a collaboration with researchers at EMCORE Corporation. Research outcomes expected are relevant to applications that include high-density data storage, displays, solid-state lighting, and communications infrastructure.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new understanding and capabilities in electronic and photonic devices. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. In addition to education of graduate students and researchers in areas of scientific and technological importance, undergraduate students will be afforded opportunities to become involved in state-of-the-art research in electronic materials and nanoscale science and technology.***

本项目旨在详细研究iii族氮化半导体异质结构的结构和电子特性，利用扫描探针测量技术在亚微米到纳米尺度上表征氮化半导体外延层的电子特性。这项工作将包括开发和实施独特的新实验能力，以表征纳米级空间分辨率和光谱分辨光激发的能量分辨率的缺陷的电子结构。在最先进的纳米材料表征方面的努力将辅以各种“宏观”电学和光学测量，以建立纳米材料特性、宏观长度尺度下的电学和光学行为以及器件性能之间的相关性。该方法有望为制定明确、有效和信息灵通的改进材料质量和优化器件性能的策略奠定坚实的基础。与EMCORE公司的研究人员合作，将特别强调与氮化半导体光电器件性能有关的问题的调查。预计研究成果将与高密度数据存储、显示器、固态照明和通信基础设施等应用相关。该项目涉及具有高潜在技术相关性的材料科学主题领域的基础研究问题。该研究将在基础水平上为材料科学的基础知识提供新的理解和电子和光子器件的能力。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。除了在重要的科学技术领域对研究生和研究人员进行教育外，本科生将有机会参与电子材料和纳米科学技术的最新研究