Nanoscale Physics of Nitride Semiconductor Heterostructures for Optical and Electronic Devices
Nanoscale Physics of Nitride Semiconductor Heterostructures for Optical and Electronic Devices
批准号:
0405851
负责人:
Edward Yu
金额:
$36.56万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-07-01 至 2007-06-30
中文摘要
本项目旨在采用扫描探针测量技术,以亚微米至纳米尺度的空间分辨率表征氮化物半导体外延层的电子特性,详细研究III族氮化物半导体异质结构的结构和电子特性。包括在这方面的努力将是独特的新的实验能力的开发和实施的表征缺陷的电子结构与纳米级的空间分辨率和分辨率的能量,使光谱分辨光激发。在国家的最先进的纳米材料表征的努力将补充各种“宏观”的电气和光学测量,使相关的纳米材料的性能,电气和光学行为在宏观长度尺度,和设备性能之间建立。该方法有望为制定明确、有效和知情的策略奠定坚实的基础,以改善材料质量和优化器械性能。特别强调的是将被放在调查的相关问题的性能氮化物半导体光电器件,将促进与研究人员在EMCORE公司的合作。预期的研究成果与高密度数据存储、显示器、固态照明和通信基础设施等应用相关。该项目涉及材料科学专题领域的基础研究问题,具有很高的潜在技术相关性。该研究将在基础层面上为电子和光子器件的新理解和能力贡献基础材料科学知识。该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。除了研究生和研究人员在科学和技术的重要性领域的教育,本科生将有机会成为在电子材料和纳米科学技术的最先进的研究参与。
英文摘要
This project aims at a detailed investigation of structural and electronic properties of Group III-nitride semiconductor heterostructures employing scanning probe measurement techniques to characterize electronic properties of nitride semiconductor epitaxial layers with spatial resolution at the submicron to nanometer scale. Included in this effort will be the development and implementation of unique new experimental capabilities for characterization of electronic structure of defects with both nanoscale spatial resolution and resolution in energy enabled by spectrally resolved optical excitation. Efforts in state-of-the-art nanoscale materials characterization will be complemented by a variety of "macroscopic" electrical and optical measurements to enable correlations to be established among nanoscale material properties, electrical and optical behavior at macroscopic length scales, and device performance. This approach is expected to establish a sound basis for development of clear, effective, and well-informed strategies for improvement in material quality and optimization of device performance. Particular emphasis will be placed on investigation of issues relevant to the performance of nitride semiconductor-based optoelectronic devices, to be facilitated by a collaboration with researchers at EMCORE Corporation. Research outcomes expected are relevant to applications that include high-density data storage, displays, solid-state lighting, and communications infrastructure.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new understanding and capabilities in electronic and photonic devices. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. In addition to education of graduate students and researchers in areas of scientific and technological importance, undergraduate students will be afforded opportunities to become involved in state-of-the-art research in electronic materials and nanoscale science and technology.***
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财政年份:2013
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负责人:Edward Yu
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GOALI: Quantum structures and nanostructure-based photon management for high-efficiency photovoltaics
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财政年份:2011
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负责人:Edward Yu
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依托单位:
Materials World Network: Quantum Semiconductor Structures for High-Efficiency Photovoltaics
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批准号:1066430
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项目类别:Continuing Grant
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资助金额:$18.68万
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财政年份:2010
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负责人:Edward Yu
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依托单位:
Materials World Network: Quantum Semiconductor Structures for High-Efficiency Photovoltaics
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批准号:0806755
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项目类别:Continuing Grant
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资助金额:$38.4万
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财政年份:2008
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负责人:Edward Yu
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依托单位:
NIRT: Semiconductor Nanowire-Based Electronics and Optoelectronics
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批准号:0506902
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项目类别:Standard Grant
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资助金额:$100.0万
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财政年份:2005
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负责人:Edward Yu
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依托单位:
Investigation of Nanoscale Electronic Properties and Transport in Semiconductors and Magnetic Materials
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批准号:0072912
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项目类别:Standard Grant
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资助金额:$29.0万
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财政年份:2000
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负责人:Edward Yu
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依托单位:
CAREER: Nanometer-scale Characterization and Fabrication of Semiconductor Heterostructures and Devices
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批准号:9501469
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项目类别:Continuing Grant
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资助金额:$25.0万
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财政年份:1995
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负责人:Edward Yu
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依托单位:
RESEARCH INITIATION AWARD: Characterization of semiconductor Heterostructures by Cross-sectional Scanning Tunneling Microscopy
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批准号:9307986
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项目类别:Standard Grant
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资助金额:$9.98万
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财政年份:1993
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负责人:Edward Yu
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依托单位:
国内基金
海外基金
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