Stabilizing HIgh-Spin States of Transition Metal Doped Silicon Clusters

该项目的目的是通过结合掺杂和表面改性来定制硅簇的电子和光学特性。最终的目标是达到一定程度的理解，使这些属性的目标控制变得可行。这需要对掺杂硅簇及其与吸附质分子的相互作用以及表面钝化进行基础研究。在与研究单位的实验和理论小组的密切合作下，我们将通过应用x射线光电离和紫外光解光谱，共振拉曼光谱以及光致发光光谱来解决这些问题，跨越可见光到x射线光子能量范围。这些技术将对表面改性掺杂硅团簇的电子和几何性质产生详细的见解。

The aim of this project is to tailor the electronic and optical properties of silicon clusters by combining doping and surface modification. The ultimate goal is to arrive at a level of understanding where targeted control of these properties will become feasible. This requires a fundamental investigation of doped silicon clusters and their interaction with adsorbate molecules as well as surface passivation. In close collaboration with experimental and theoretical groups of the research unit we will address these questions across the visible through X-ray photon energy range by applying X-ray photoionization and UV photodissociation spectroscopy, resonant Raman spectroscopy, as well as photoluminescence spectroscopy. These techniques will yield detailed insight into the electronic and geometric properties of surface modified doped silicon clusters.