SBIR Phase II: High-resolution, high-precision 193-nm photomask phase metrology system

SBIR Phase II：高分辨率、高精度193 nm光掩模相位测量系统

• 批准号: 0450620
• 负责人: James Jacob
• 金额: --
• 依托单位: ACTINIX
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-02-01 至 2008-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0450620&HistoricalAwards=false
• 关键词: SBIR; Phase; II; resolution; precision

This Small Business Innovation Research (SBIR) Phase II project aims to design and construct an ultra-high-resolution, high-precision phase-shift integrated measurement system suitable for metrology of advanced phase-shifting photomasks. A number of semiconductor manufacturers now expect to progress from the 90 nm through the 45 nm nodes using an exposure wavelength of 193 nm. Advanced photolithographic techniques are necessary to print these sub-wavelength features. Phase-shifting photomasks, i.e. those in which the opticalthickness, as well as the opacity is controlled, are a key reticle enhancement technology. Fast and accurate metrology of critical-layer phase-shift masks is becoming necessary both for process control and repair validation, but the enabling tools do not yet exist. The goal of this Phase II program is to integrate the actinic high-repetition rate laser built in Phase I into an interferometric laser microscope involving the design, construction, and integration of a stablephase-shifting interferometer and laser microscope, and the incorporation and optimization of phase-shifting interferometry signal processing algorithms. The integrated optical system will enable phase metrology on advanced photomasks, with the measurement precision and spatial resolution required by the International Technology Roadmap for Semiconductors (ITRS), mask makers and mask users. Commercially, the primary beneficiary of the Phase II photomask phase metrology system is the semiconductor optical lithography industry. The ITRS 'roadmap' for the 90-nm node and beyond requires measurements of photomask optical path difference with sub-0.4 degree precision. This metrology must be performed at spatial resolution scales consistent with feature sizes of the respective technology nodes, and for both isolated and densely-packed structures. No commercial metrology tools yet exist which satisfy these demands. The Phase II high-precision metrology system will enable manufactures to characterize, predict, and control mask-loading effects and other repair and process control issues essential to the reliable fabrication of phaseshifting masks. It is also likely that the integrated phase metrology system will find utility in the area of nano-MEMS testing and other nano-scale interferometry.

该小型企业创新研究（SBIR）第二阶段项目旨在设计和构建适用于先进相移光掩模计量的超高分辨率，高精度相移集成测量系统。许多半导体制造商现在期望使用193 nm的曝光波长从90 nm到45 nm节点取得进展。需要先进的光刻技术来印刷这些亚波长特征。相移光掩模是一种关键的掩模增强技术，它可以控制掩模的光学厚度和不透明度。关键层相移掩模的快速和准确的计量对于工艺控制和修复验证都变得必要，但是使能工具还不存在。该第二阶段计划的目标是将第一阶段中内置的光化高重复率激光器集成到干涉激光显微镜中，该干涉激光显微镜涉及稳定相移干涉仪和激光显微镜的设计，建造和集成，以及相移干涉信号处理算法的合并和优化。集成光学系统将实现先进光掩模的相位计量，具有国际半导体技术路线图（ITRS）、掩模制造商和掩模用户所需的测量精度和空间分辨率。在商业上，第二阶段光掩模相位计量系统的主要受益者是半导体光学光刻工业。ITRS“路线图”为90纳米节点和超越需要测量光掩模光程差与次0.4度的精度。这种计量必须在与各个技术节点的特征尺寸一致的空间分辨率尺度下进行，并且对于隔离和密集封装的结构都是如此。目前还没有满足这些要求的商业计量工具。第二阶段的高精度计量系统将使制造商能够表征，预测和控制掩模加载效应和其他维修和工艺控制问题，这些问题对相移掩模的可靠制造至关重要。集成相位计量系统也可能在纳米MEMS测试和其他纳米尺度干涉测量领域中找到实用性。