SBIR Phase II: High-resolution, high-precision 193-nm photomask phase metrology system

SBIR Phase II：高分辨率、高精度193 nm光掩模相位测量系统

• 批准号: 0450620
• 负责人: James Jacob
• 金额: --
• 依托单位: ACTINIX
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-02-01 至 2008-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0450620&HistoricalAwards=false
• 关键词: SBIR; Phase; II; resolution; precision

This Small Business Innovation Research (SBIR) Phase II project aims to design and construct an ultra-high-resolution, high-precision phase-shift integrated measurement system suitable for metrology of advanced phase-shifting photomasks. A number of semiconductor manufacturers now expect to progress from the 90 nm through the 45 nm nodes using an exposure wavelength of 193 nm. Advanced photolithographic techniques are necessary to print these sub-wavelength features. Phase-shifting photomasks, i.e. those in which the opticalthickness, as well as the opacity is controlled, are a key reticle enhancement technology. Fast and accurate metrology of critical-layer phase-shift masks is becoming necessary both for process control and repair validation, but the enabling tools do not yet exist. The goal of this Phase II program is to integrate the actinic high-repetition rate laser built in Phase I into an interferometric laser microscope involving the design, construction, and integration of a stablephase-shifting interferometer and laser microscope, and the incorporation and optimization of phase-shifting interferometry signal processing algorithms. The integrated optical system will enable phase metrology on advanced photomasks, with the measurement precision and spatial resolution required by the International Technology Roadmap for Semiconductors (ITRS), mask makers and mask users. Commercially, the primary beneficiary of the Phase II photomask phase metrology system is the semiconductor optical lithography industry. The ITRS 'roadmap' for the 90-nm node and beyond requires measurements of photomask optical path difference with sub-0.4 degree precision. This metrology must be performed at spatial resolution scales consistent with feature sizes of the respective technology nodes, and for both isolated and densely-packed structures. No commercial metrology tools yet exist which satisfy these demands. The Phase II high-precision metrology system will enable manufactures to characterize, predict, and control mask-loading effects and other repair and process control issues essential to the reliable fabrication of phaseshifting masks. It is also likely that the integrated phase metrology system will find utility in the area of nano-MEMS testing and other nano-scale interferometry.

该小型企业创新研究（SBIR）二期项目旨在设计和构建适用于先进相移光掩模测量的超高分辨率、高精度相移集成测量系统。许多半导体制造商现在预计使用 193 nm 的曝光波长从 90 nm 发展到 45 nm 节点。打印这些亚波长特征需要先进的光刻技术。相移光掩模，即光学厚度和不透明度受控的光掩模，是关键的掩模版增强技术。关键层相移掩模的快速而准确的计量对于过程控制和修复验证来说变得必要，但支持工具尚不存在。第二阶段项目的目标是将第一阶段内置的光化高重复率激光器集成到干涉激光显微镜中，涉及稳定相移干涉仪和激光显微镜的设计、构建和集成，以及相移干涉信号处理算法的结合和优化。该集成光学系统将能够在先进光掩模上进行相位测量，并具有国际半导体技术路线图（ITRS）、掩模制造商和掩模用户所需的测量精度和空间分辨率。在商业上，第二阶段光掩模相位测量系统的主要受益者是半导体光学光刻行业。 90 纳米及以上节点的 ITRS“路线图”要求以低于 0.4 度的精度测量光掩模光程差。这种计量必须在与各自技术节点的特征尺寸一致的空间分辨率尺度上进行，并且对于隔离结构和密集结构都是如此。目前还没有满足这些需求的商业计量工具。第二阶段的高精度计量系统将使制造商能够表征、预测和控制掩模加载效应以及对可靠制造相移掩模至关重要的其他修复和工艺控制问题。集成相位计量系统也有可能在纳米 MEMS 测试和其他纳米级干涉测量领域发挥作用。