NIRT: Nanostructured Materials for Interconnect and Packaging Technology

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NSF/NIRT-0506841-UCLA"Nanostructured Materials for Interconnect and Packaging Technology" Abstract: To interconnect and package the very-large-scale-integration of billions of transistors in a Si device, we shall carry out a computational and experimental research program to develop nanostructured materials for that will render unique properties and advantages in future generations of nanoelectronic devices. Three areas of research will be conducted; (1) Nano-twinned Cu lines with ultra-high strength and normal conductivity so that they can serve as free standing interconnects with air as the lowest k dielectric, (2) Nano-hollow SiO2 and Si3N4 particles as ultra low dielectric constant materials for Cu/ultra low k integration, and (3) Improvements in reliability of nanostructured interconnects by reducing surface electromigration. Both experimental and theoretical investigations are fully integrated in this project. In addition, Intel is our industrial partner. Education and research will be integrated by developing two graduate courses on "Nano and Micromechanics" and "Kinetic processes in nanoscale structures." International collaborations with researchers from Germany, Taiwan, and the Ukraine have been established.