NIRT: Nanostructured Materials for Interconnect and Packaging Technology

NIRT：用于互连和封装技术的纳米结构材料

• 批准号: 0506841
• 负责人: King-Ning Tu
• 金额: $ 127.5万
• 依托单位: University of California-Los Angeles
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-08-01 至 2009-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0506841&HistoricalAwards=false
• 关键词: NIRT; Nanostructured; Materials; Interconnect; Packaging

NSF/NIRT-0506841-UCLA"Nanostructured Materials for Interconnect and Packaging Technology" Abstract: To interconnect and package the very-large-scale-integration of billions of transistors in a Si device, we shall carry out a computational and experimental research program to develop nanostructured materials for that will render unique properties and advantages in future generations of nanoelectronic devices. Three areas of research will be conducted; (1) Nano-twinned Cu lines with ultra-high strength and normal conductivity so that they can serve as free standing interconnects with air as the lowest k dielectric, (2) Nano-hollow SiO2 and Si3N4 particles as ultra low dielectric constant materials for Cu/ultra low k integration, and (3) Improvements in reliability of nanostructured interconnects by reducing surface electromigration. Both experimental and theoretical investigations are fully integrated in this project. In addition, Intel is our industrial partner. Education and research will be integrated by developing two graduate courses on "Nano and Micromechanics" and "Kinetic processes in nanoscale structures." International collaborations with researchers from Germany, Taiwan, and the Ukraine have been established.

NSF/NIRT-0506841-UCLA《用于互连和封装技术的纳米结构材料》摘要：为了在硅器件中互连和封装数十亿个晶体管的超大规模集成，我们将开展一项计算和实验研究计划，以开发纳米结构材料，使其在未来几代纳米电子器件中具有独特的性能和优势。将开展三个方面的研究：(1)具有超高强度和正常导电性的纳米孪晶铜线，使其可以作为与空气作为最低k介电介质的自支撑互连；(2)纳米空心二氧化硅和Si3N4粒子作为用于铜/超低k集成的超低介电常数材料；以及(3)通过减少表面电迁移来提高纳米结构互连的可靠性。该项目将实验研究和理论研究充分结合起来。此外，英特尔也是我们的工业合作伙伴。教育和研究将结合起来，开设两门研究生课程，分别是“纳米和微观力学”和“纳米结构中的动力学过程”。与德国、台湾和乌克兰的研究人员建立了国际合作关系。