Neutron Scattering Studies of New Magnetic Semiconductors and their Epitaxial Structures
新型磁性半导体及其外延结构的中子散射研究
基本信息
- 批准号:0509478
- 负责人:
- 金额:$ 29.85万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2005
- 资助国家:美国
- 起止时间:2005-08-01 至 2009-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
*** NON-TECHNICAL ABSTRACT ***Magnetic semiconductors (MSs) continue to be the subject of vigorous research because of their potential application in "spintronics", a novel electronics that may have a great impact on future communication and computer technologies. Naturally occurring MSs are not useful for practical spintronics since they retain their magnetism only at very low temperatures. Therefore, substantial efforts are currently focused on creating new man-made MSs of suitable properties. Several such systems have recently been synthesized, and good understanding of their magnetism is a task of considerable importance. Neutron scattering is a powerful tool for investigating magnetic solids. The objective of this project is to exploit the unique capabilities of neutron scattering techniques for investigating a range of effects of current interest in these novel MSs. Inelastic neutron scattering will be used for obtaining a clear microscopic-level insight into interactions between magnetic atoms in these materials. Some new MSs alloys can be prepared only in the form of ultra-thin films. The technique of neutron reflectometry, which is particularly well suited for investigating thin film magnetism, will be used for studying such utltra-thin MS layers and multilayers containing other materials sandwiched between MS layers. The project involves collaboration with several research groups from the US and other countries. Two graduate students will take part in the research, and the participation of undergraduate students in the project will be encouraged.*** TECHNICAL ABSTRACT ***The objective of this project is to exploit the unique capabilities of elastic and inelastic neutron scattering techniques for investigating a range of effects of current interest in recently synthesized novel magnetic semiconductors. These materials now receive strong attention because of their potential application in spin-controlled electronics ("spintronics"). In particular, inelastic scattering will be used for investigating propagating spin waves in Ga1-xMnxAs, an extensively studied "prototypical" spintronics material, as well for characterizing the magnetic excitations of isolated Mn-Mn and Co-Co pairs in diluted alloys of Zn1-xMnxO, Zn1-xCoxO and several other materials derived from II-VI semiconductors at ambient pressure and high pressures up to 8 kbar. The results of such experiments are expected to provide much new microscopic-level information about magnetic exchange interactions in these systems. Another substantial part of the project is neutron reflectometry studies of thin film and superlattice structures based on Ga1-xMnxAs and Ge1-x-y MnxCoy. The measurements will be focused on investigating interlayer coupling effects and magnetic domains in such epitaxial systems. The project involves collaboration with several partners from the US and other countries. Two graduate students will participate in the research. Also, participation of undergraduate students will be encouraged and attractive opportunities will be offered to those aspiring young scientists.
* 非技术摘要 * 磁性半导体(MS)由于其在“自旋电子学”(一种可能对未来通信和计算机技术产生重大影响的新型电子学)中的潜在应用而继续成为积极研究的主题。自然产生的MS对实际的自旋电子学没有用处,因为它们只在非常低的温度下保持磁性。因此,目前大量的努力集中在创造新的人造MS的合适的性能。最近已经合成了几个这样的系统,并且很好地理解它们的磁性是一项相当重要的任务。中子散射是研究磁性固体的有力工具。这个项目的目的是利用中子散射技术的独特能力,调查目前感兴趣的影响,在这些新的MS的范围。 非弹性中子散射将用于获得一个清晰的微观层次的洞察这些材料中的磁性原子之间的相互作用。一些新的MS合金只能以超薄膜的形式制备。中子反射计技术特别适合于研究薄膜磁性,将用于研究这种超薄MS层和MS层之间夹有其他材料的多层膜。该项目涉及与来自美国和其他国家的几个研究小组的合作。两名研究生将参加研究,并鼓励本科生参与该项目。技术摘要 * 本项目的目的是利用弹性和非弹性中子散射技术的独特能力,研究最近合成的新型磁性半导体中当前感兴趣的一系列效应。 这些材料现在受到强烈关注,因为它们在自旋控制电子学(“自旋电子学”)中的潜在应用。特别是,非弹性散射将被用于调查传播自旋波在Ga 1-xMnxAs,一个广泛研究的“原型”自旋电子学材料,以及用于表征孤立的Mn-Mn和Co-Co对在稀释合金的Zn 1-xMnxO,Zn 1-xCoxO和其他几种材料来自II-VI半导体在环境压力和高压高达8千巴的磁激发。这些实验的结果有望为这些系统中的磁交换相互作用提供更多新的微观信息。该项目的另一个重要部分是基于Ga 1-xMnxAs和Ge 1-x-y MnxCoy的薄膜和超晶格结构的中子反射计研究。 测量将集中在调查层间耦合效应和磁畴在这样的外延系统。该项目涉及与来自美国和其他国家的几个合作伙伴的合作。两名研究生将参与这项研究。此外,将鼓励本科生参与,并为那些有抱负的年轻科学家提供有吸引力的机会。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Tomasz Giebultowicz其他文献
Tomasz Giebultowicz的其他文献
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{{ truncateString('Tomasz Giebultowicz', 18)}}的其他基金
Neutron and Synchrotron Radiation Scattering Studies of New Ferromagnetic Semiconductors and their Nanostructures
新型铁磁半导体及其纳米结构的中子和同步辐射散射研究
- 批准号:
0204105 - 财政年份:2002
- 资助金额:
$ 29.85万 - 项目类别:
Continuing Grant
Neutron Scattering Studies of Ferromagnetic Semiconductor Superlattices Based on III-V and IV-VI Compounds
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- 批准号:
9972586 - 财政年份:1999
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$ 29.85万 - 项目类别:
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Neutron and Synchrotron Radiation Scattering Studies of Multilayered Structures Based on Europium Chalcogenides and other Magnetic Semiconductors
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9510434 - 财政年份:1995
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$ 29.85万 - 项目类别:
Continuing Grant
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