SBIR Phase I: Atmospheric Pressure Molecular Layer CVD
SBIR Phase I: Atmospheric Pressure Molecular Layer CVD
批准号:
0539333
负责人:
Simon Selitser
金额:
$9.99万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2006
资助国家:
美国
项目状态:
已结题
起止时间:
2006-01-01 至 2006-06-30
中文摘要
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英文摘要
This Small Business Innovation Research (SBIR) Phase I project proposes to demonstrate the feasibility of a novel approach to molecular-layer film deposition. Atomic LayerDeposition (ALD) for barrier layers and thin dielectrics provides unexcelled control offilm thickness and conformality, but has been plagued by low deposition rates, filmcontamination, and high cost. Many of these deficiencies are due to the limited reactantconcentrations used in low-pressure operation, combined with the complex pump / purgecycles conventionally employed. Atmospheric-pressure operation, combined with spatialreactant separation, can enable a continuous-processing architecture that promises muchhigher throughput and lower cost, and high reactant concentrations ensure saturatedmonolayer growth and low contaminant concentrations without unacceptably slow deposition cycles. In this work the company proposes to demonstrate deposition of uniform films of TiN to show the benefits of the atmospheric pressure approach, using a prototype reactor previously constructed. Successful demonstration of the benefits of AP-MLCVD will provide the company with sufficient information to construct a viable alpha-stage commercial tool, in which deposition testing on 200-mm or 300-mm wafers relevant to large-scale integrated circuit fabrication can be performed. Commercially, such full-scale demonstrations are indispensable for commercialization of new processes in the semiconductor manufacturing industry. Atmospheric-pressure operation, combined with spatial-separation-based MLCVD process, makes it possible to construct a high-throughput deposition tool that is simultaneously low in cost, as no load locks or pump down operations are required, and simple circular wafer transport with a single load-unload station can be used. APMLCVD will enable a new generation of deposition processes for controllable fabrication of ultra-thin films of complex materials, such as high-k dielectrics and diffusion barrier layers.
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SBIR Phase I: Atmospheric Pressure Deep Etch for MEMS Manufacturing and Integration
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批准号:0839272
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:2009
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负责人:Simon Selitser
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依托单位:
SBIR Phase I: Nanoporous Nano-laminated Ultra Low-K Dielectric
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批准号:0741024
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项目类别:Standard Grant
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资助金额:$9.98万
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财政年份:2008
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负责人:Simon Selitser
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依托单位:
SBIR Phase I: Inductive Thermal Plasmas for Ultrahigh Throughput Soft Etch in Integrated Circuit (IC) Manufacturing
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批准号:9960809
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项目类别:Standard Grant
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资助金额:$9.94万
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财政年份:2000
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负责人:Simon Selitser
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依托单位:
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