STTR Phase I: Germyl Silanes - Enabling Precursors for Chemical Vapor Deposition of Advanced CMOS Substrates, CMOS-Integrated MEMS, and Nano-Scale Quantum-Dot Silicon Photonics

STTR 第一阶段：Germyl 硅烷 - 为先进 CMOS 基板、CMOS 集成 MEMS 和纳米级量子点硅光子学的化学气相沉积提供前驱体

• 批准号: 0539750
• 负责人: Matthew Stephens
• 金额: --
• 依托单位: Voltaix, Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-01-01 至 2007-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0539750&HistoricalAwards=false
• 关键词: STTR; Phase; Germyl; Silanes; Enabling

This Small Business Technology Transfer (STTR) Phase I project constitutes the first step in thecommercialization of an innovation in the manufacture of advanced complementary metal oxide (CMOS) semiconductor substrates, CMOS-integrated micro-electro-mechanical systems (MEMS), thin film amorphous solar cells, and nano-scale quantum-dot silicon photonics. The project will demonstrate industrially scaleable syntheses of germyl silane precursors and their use to create smooth, homogeneous, fully relaxed, high-Ge content silicon germanium films through low-temperature, high-growth rate chemical vapor deposition processes. Further, through partnerships with tool makers, the project will demonstrate the use of such films to create a virtual substrate for strained silicon layers, a solar cell, and a MEMS device. The project addresses a critical need for precursors and processes that deposit such films under low temperature conditions with throughput rates that are significantly higher than those offered by existing processes. Further, the project enables the manufacture of nearly monodispsperse, chemically homogenous quantum dot arrays that can serve as silicon-based lasers and detectors.Commercially, the potential market for devices made with these technologies is predicted to exceed several billion dollars per year and exhibit double-digit growth rates over the next five years. Ge-rich SiGe films will enable higher clock speeds in microprocessors, lower power consumption in cell phones, silicon-based photonics, and more efficient solar cells. As such, the innovation will reduce energy consumption and advance the technological stature of the U.S. semiconductor, solar, MEMS, and photonics industries.

这一小企业技术转让（STTR）第一阶段项目构成了在先进的互补金属氧化物（CMOS）半导体基板，CMOS集成微机电系统（MEMS），薄膜非晶太阳能电池和纳米级量子点硅光子学制造的创新商业化的第一步。该项目将展示甲锗基硅烷前体的工业规模化合成及其用于通过低温，高生长速率化学气相沉积工艺制造光滑，均匀，完全松弛，高Ge含量的硅锗薄膜。此外，通过与工具制造商的合作，该项目将展示使用这种薄膜为应变硅层、太阳能电池和MEMS器件创建虚拟衬底。该项目解决了对前体和工艺的迫切需求，这些前体和工艺在低温条件下存款这种薄膜，其生产率大大高于现有工艺所提供的生产率。此外，该项目还可以制造出几乎单分散、化学均匀的量子点阵列，这些阵列可以用作硅基激光器和探测器。商业上，利用这些技术制造的设备的潜在市场预计每年将超过数十亿美元，并在未来五年内呈现两位数的增长率。富含锗的硅锗薄膜将使微处理器的时钟速度更快，手机、硅基光子学和更高效的太阳能电池的功耗更低。因此，这项创新将减少能源消耗，并提高美国半导体、太阳能、MEMS和光子学行业的技术地位。