CAREER: Theory of Epitaxial-Oxide-Semiconductor Nanosystems

职业:外延氧化物半导体纳米系统理论

基本信息

  • 批准号:
    0548182
  • 负责人:
  • 金额:
    $ 40万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    2006
  • 资助国家:
    美国
  • 起止时间:
    2006-08-15 至 2012-07-31
  • 项目状态:
    已结题

项目摘要

TECHNICAL SUMMARY:This CAREER award supports computational and theoretical research that aims to develop a theoretical framework for epitaxial-oxide-semiconductor nanosystems and education in computational materials research targeted on undergraduate and high-school students.Crystalline epitaxial oxides on semiconductors (COS) open a new avenue for complementary metal oxide semiconductor (CMOS) technology utilizing materials other than Si, e.g. Ge or GaAs. Other applications of COS are at the end of the Si technology roadmap; the main advantage of a crystalline oxide is its epitaxial registry to the Si substrate that results in superior device performance by eliminating interfacial defects. COS combined with recently discovered epitaxial semiconductors on oxides (SOX) provides another set of exciting possibilities to explore. The PI aims to develop a comprehensive theoretical framework for the emerging field of nanoscale epitaxial oxide semiconductor systems. The research focuses on fundamental problems in two areas:1. Crystal growth of oxide-semiconductor and semiconductor-oxide systems.2. "Tunability" of the electronic and transport properties of epitaxial oxide-semiconductor nanosystems.The key to successful oxide-semiconductor heteroepitaxy is to achieve two-dimensional or Frank-Van der Merwe growth. In addition to lattice and thermal mismatch, the transition between fundamentally different types of bonding across the interface must be considered. The PI will investigate the use of intermetallic Zintl compounds as transition layers between ionic oxides and covalent semiconductors. The central idea is to exploit the intrinsic charge transfer in a Zintl compound to force the more electronegative metal to assume semi-covalent bonding which continues into the semiconductor. Two other key problems are the 90 twin domains caused by breaking of the symmetry across the interfaces (e.g. zinc-blende to perovskite), and step incommensurability between two materials. Relating the atomic geometry and electronic structure of the nanoassembly to its electrical properties, such as charge transfer and retention, will enable the PI to assess possible applications of these systems. The approach is based on ab-initio total energy methods and atomic-scale electron transport techniques that the PI has recently developed. The work will entail close collaboration with experimentalists in academia and industry.To bring the excitement of practical theoretical nanoscience into undergraduate education, the PI plans to develop, improve, and enhance a new course entitled "Practicum on Computational Materials for Nanotechnology." This course will be offered to senior year students in Physics, Chemistry, Electrical Engineering, and Chemical Engineering. An outreach program aimed at attracting female high-school students to nanoscience will also be developed in collaboration with the Physics instructor at the LBJ Science Academy, a magnet high school with a large number of minority students. The PI aims to create an opportunity for female students to spend summers with the PI's research group to learn about computational nanoscience. This activity will be coordinated with a successful existing UTEACH program at UT.NON-TECHNICAL SUMMARY:This CAREER award supports computational and theoretical research that aims to develop a theoretical understanding of nanosystems and structures on semiconductor surfaces and education in computational materials research with a focus on undergraduates.The PI will use advanced computational tools that start from the constituent atoms to study how oxide materials can be grown on the surfaces of semiconductors, with an emphasis on materials other than silicon, the current workhorse of the electronics industry. The PI will also study the electronic properties of the resulting nanosystems. The PI will focus on fundamental materials science and surface science problems. The work helps lay the theoretical foundations for semiconductor electronic devices with significantly higher performance and enhanced functionality as compared to current electronic device technology. The PI will also explore new phenomena that may arise in these unusual systems. To bring the excitement of practical theoretical nanoscience into undergraduate education, the PI plans to develop, improve, and enhance a new course entitled "Practicum on Computational Materials for Nanotechnology." This course will be offered to senior year students in Physics, Chemistry, Electrical Engineering, and Chemical Engineering. An outreach program aimed at attracting female high-school students to nanoscience will also be developed in collaboration with the Physics instructor at the LBJ Science Academy, a magnet high school with a large number of minority students. The PI aims to create an opportunity for female students to spend summers with the PI's research group to learn about computational nanoscience. This activity will be coordinated with a successful existing UTEACH program at UT.
技术概述:该职业奖支持计算和理论研究,旨在为外延氧化半导体纳米系统和面向本科生和高中生的计算材料研究教育开发理论框架。半导体上的晶体外延氧化物(COS)为互补金属氧化物半导体(CMOS)技术开辟了一条新的途径,该技术利用了除Si以外的材料,如Ge或GaAs。COS的其他应用处于Si技术路线图的末端;晶体氧化物的主要优点是它的外延注册到硅衬底,导致优越的器件性能,消除接口缺陷。COS与最近发现的氧化物外延半导体(SOX)相结合,提供了另一组令人兴奋的探索可能性。PI旨在为纳米级外延氧化物半导体系统的新兴领域发展一个全面的理论框架。本研究主要关注两个方面的基本问题:1。氧化物-半导体和半导体-氧化物系统的晶体生长。外延氧化物-半导体纳米系统的电子和输运特性的“可调性”。氧化物半导体异质外延成功的关键是实现二维生长或Frank-Van der Merwe生长。除了晶格和热失配外,还必须考虑跨界面的基本不同类型键之间的转换。PI将研究使用金属间锌化合物作为离子氧化物和共价半导体之间的过渡层。其核心思想是利用Zintl化合物中的本征电荷转移,迫使电负性更强的金属形成半共价键,并继续进入半导体。另外两个关键问题是由于界面对称性的破坏(例如锌-闪锌矿到钙钛矿)引起的90个孪晶畴,以及两种材料之间的阶梯不可通约性。将纳米组件的原子几何形状和电子结构与其电学性质(如电荷转移和保留)联系起来,将使PI能够评估这些系统的可能应用。该方法是基于ab-initio总能量方法和PI最近开发的原子尺度电子传输技术。这项工作需要与学术界和工业界的实验人员密切合作。为了将实用的理论纳米科学带入本科教育,PI计划开发、改进和加强一门名为“纳米技术计算材料实践”的新课程。本课程面向物理、化学、电子工程和化学工程专业的大四学生。一个旨在吸引女高中生学习纳米科学的推广项目也将与LBJ科学院的物理讲师合作开发,LBJ科学院是一所拥有大量少数民族学生的磁石高中。该项目旨在为女学生创造一个机会,让她们在暑期与该项目的研究小组一起学习计算纳米科学。这项活动将与德克萨斯大学现有的成功的UTEACH项目协调。非技术总结:该职业奖支持计算和理论研究,旨在发展对半导体表面纳米系统和结构的理论理解,以及以本科生为重点的计算材料研究教育。PI将使用先进的计算工具,从组成原子开始,研究如何在半导体表面生长氧化物材料,重点是硅以外的材料,硅是目前电子工业的主力。PI还将研究由此产生的纳米系统的电子特性。PI将专注于基础材料科学和表面科学问题。这项工作有助于为半导体电子器件奠定理论基础,与当前的电子器件技术相比,半导体电子器件具有显着更高的性能和增强的功能。PI还将探索这些不寻常系统中可能出现的新现象。为了将实用的理论纳米科学带入本科教育,PI计划开发、改进和加强一门名为“纳米技术计算材料实践”的新课程。本课程面向物理、化学、电子工程和化学工程专业的大四学生。一个旨在吸引女高中生学习纳米科学的推广项目也将与LBJ科学院的物理讲师合作开发,LBJ科学院是一所拥有大量少数民族学生的磁石高中。该项目旨在为女学生创造一个机会,让她们在暑期与该项目的研究小组一起学习计算纳米科学。这项活动将与德克萨斯大学现有的成功的UTEACH项目协调。

项目成果

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Alexander Demkov其他文献

Alexander Demkov的其他文献

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{{ truncateString('Alexander Demkov', 18)}}的其他基金

IRES University of Texas IBM Zurich Collaboration: Modeling and Integration of Non-Linear Optics with Si Using Epitaxial Oxides
IRES 德克萨斯大学 IBM 苏黎世合作:使用外延氧化物对非线性光学与硅进行建模和集成
  • 批准号:
    1358111
  • 财政年份:
    2014
  • 资助金额:
    $ 40万
  • 项目类别:
    Standard Grant
GOALI: Theoretical and Experimental Study of the Thermodynamic Stability of Amorphous Thin Films Based on Zirconia and Hafnia
GOALI:氧化锆和氧化铪非晶薄膜热力学稳定性的理论与实验研究
  • 批准号:
    0606464
  • 财政年份:
    2006
  • 资助金额:
    $ 40万
  • 项目类别:
    Continuing Grant

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