Self-Aligned Nanomanufacturing of Carbon Nanotubes for Nanoelectronics

本项目的研究目标是开发一种能够在较低温度下以可控的方式实现碳纳米管的自对准生长的方法。具体目标是：1)建立碳纳米管自对准生长的理论模型；2)发展纳米级光增强和尖端电极尖端局部加热的方法；3)实现激光照射下两个金属电极之间的碳纳米管生长；4)利用电场控制碳纳米管的生长方向；5)实现半导体和金属碳纳米管的选择性生长；6)展示S所开发的碳纳米管制造方法的实际应用。该项目将通过将拟议的研究与研究生和本科生的教育活动相结合，在促进教学、培训和学习的同时促进发现和理解。项目活动将被整合到一门现有的课程(纳米技术导论)中，供研究生和大四本科生使用。报名参加本课程的学生将有机会参观研究设施并参与对实验结果的讨论。这种方法将加强学生对纳米科学和工程基础理论的理解。这个项目将吸引不同的学生群体，作为鼓励代表不足的群体继续攻读研究生的一种方式。该项目的成功完成将为未来的纳米电子制造奠定基础。所提出的工艺与微电子中使用的当前制造工艺兼容，并可用于将碳纳米管器件和互连作为使用现有半导体制造基础设施制造的集成电路中的关键部件进行集成。碳纳米管器件的集成将以最小的额外资本投资提高集成密度、电路功能、功耗和电路速度。该项目的成功有可能将基于碳纳米管的纳米电子学转移到一个可行的行业。

The research goal of this project is to develop a methodology that can achieve self-aligned growth of carbon nanotubes (CNTs) in a controllable manner at lower temperature. The specific objectives are to: 1) develop theoretical models for self-aligned CNT growth; 2) develop a method of nanoscale light enhancement and local heating at the apex of tip-shaped electrodes; 3) achieve CNT growth between two metallic electrodes under laser irradiation; 4) use an electrical field to control CNT growth direction; 5) achieve selective growth of semiconducting and metallic CNTs; and 6) demonstrate practical applications of the CNT nanomanufacturing method(s) developed. This project will advance discovery and understanding while promoting teaching, training, and learning through the integration of the proposed research with educational activities for both graduate and undergraduate students. The project activities will be integrated into an existing course (Introduction to Nanotechnology) for graduate and senior undergraduate students. The students enrolled in this course will have an opportunity to visit the research facility and participate in discussions of the experimental results. This approach will strengthen students understanding of basic theories in nanoscale science and engineering. This project will engage a diverse group of students as a way of encouraging underrepresented groups to continue on for postgraduate study. The successful completion of this project will lay a foundation for future nanoelectronics manufacturing. The proposed process is compatible with current manufacturing processes used in microelectronics and can be used to integrate CNT devices and interconnections as key components in integrated circuits fabricated using current semiconductor manufacturing infrastructures. The integration of CNT devices will improve the integration density, circuit functionality, power consumption and circuit speed, with minimum additional capital investment. The success of this project has the potential to transfer CNT-based nanoelectronics to a viable industry.