Low-Temperature Epitaxy of Gallium Nitride Thin Films

氮化镓薄膜的低温外延

• 批准号: 1068510
• 负责人: Yongfeng Lu
• 金额: $ 27.53万
• 依托单位: University of Nebraska-Lincoln
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-05-01 至 2016-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1068510&HistoricalAwards=false
• 关键词: Low; Temperature; Epitaxy; Gallium; Nitride

The research objective of this award is to elucidate the mechanisms responsible for a low-temperature growth process of high-quality gallium nitride (GaN) films with low thermal impact on substrates. The project will develop a laser-assisted metalorganic vapor phase epitaxy (L-MOVPE) process that can enhance the chemical reactions in epitaxy of GaN thin films with low substrate temperatures. A wavelength-tunable CO2 laser, with a wavelength tunability from 9.2 to 10.9 micrometers, will be used to resonantly excite NH3 molecules for promoting chemical reactions to facilitate and maximize the GaN epitaxy process. The research approach progresses from mechanism study of resonant excitations of precursor molecules, to growth of high-quality GaN epilayers on different substrates for a wide range of applications. Deliverables include an L-MOVPE system configured for synthesis of GaN thin films and other functional materials, documentation of research results, and engineering student education.If successful, the results of this research will realize low-temperature growth of high-quality GaN films with high energy-coupling efficiency and low thermal impact on substrates. In terms of applications, the proposed method can provide a novel approach of GaN epitaxy on sapphire or SiC substrates for electronic, optoelectronic, chemical, and biological applications. The successful completion of this project will impact the scientific research of laser-controlled chemical processes by resonant excitation of precursor molecules. Practically, the proposed method is expected to provide a novel approach to synthesizing functional materials at lower temperature with high energy-coupling efficiency. The research results will also contribute to productivity improvement, energy savings, and environmental protection in related industries that rely on high-temperature chemical processes to fabricate compound semiconductors. Graduate and undergraduate students will benefit through involvement in the research and classroom instruction. The engagement of K-12 students and teachers in this project will also establish new partnerships between the University and K-12 schools.

该奖项的研究目标是阐明高质量氮化镓（GaN）薄膜的低温生长过程的机制，对衬底的热影响较小。该项目将开发一种激光辅助金属有机气相外延（L-MOVPE）工艺，该工艺可以在低衬底温度下增强GaN薄膜外延中的化学反应。波长可调谐的CO2激光器，波长可调谐范围为9.2至10.9微米，将用于共振激发NH3分子，以促进化学反应，从而促进和最大化GaN外延工艺。研究方法从前驱体分子的共振激发机制研究进展到在不同衬底上生长高质量GaN外延层以用于广泛的应用。该项目的成果包括用于GaN薄膜等功能材料合成的L-MOVPE系统、研究成果的记录、工程专业学生的培养等。如果该研究成果获得成功，将实现高能量耦合效率、对基板的热影响小的高质量GaN薄膜的低温生长。就应用而言，所提出的方法可以为电子、光电子、化学和生物应用提供一种在蓝宝石或SiC衬底上外延GaN的新方法。该项目的成功完成将对激光共振激发前驱体分子控制化学过程的科学研究产生重大影响。实际上，该方法有望提供一种在较低温度下合成高能量耦合效率功能材料的新方法。该研究成果还将有助于提高依赖高温化学工艺制造化合物半导体的相关行业的生产率，节约能源和保护环境。研究生和本科生将通过参与研究和课堂教学受益。K-12学生和教师参与该项目也将在大学和K-12学校之间建立新的伙伴关系。