Light Emission From Ambipolar Semiconducting Polymer Field Effect Transistors

双极半导体聚合物场效应晶体管的发光

• 批准号: 0602280
• 负责人: Alan Heeger
• 金额: $ 37.8万
• 依托单位: University of California-Santa Barbara
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-05-01 至 2009-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0602280&HistoricalAwards=false
• 关键词: Light; Emission; Ambipolar; Semiconducting; Polymer

TECHNICAL SUMMARY: Ambipolar polymer light emitting field-effect transistors (LEFETs) have been demonstrated. Direct imaging showed emission in a narrow region within the channel. The light intensity and the location of the emission zone are controlled by the gate bias. The emission zone is near the center of the channel at the crossover point where the electron and hole currents are equal. The gate bias induced shift in the emission zone and the ambipolar charge transport indicate that the device is truly a light emitting transistor. The funded research will focus on achieving a fundamental understanding of the operation of the light emitting field effect transistor with the goal of optimizing the emission brightness and efficiency. Specific tasks include the following:a. Lower the operating voltage for the polymer LEFET by increasing the capacitance of the gate dielectric (Ci) and by reducing the channel length of the LEFET. b. Spatially and spectrally resolve the light emission. c. Test different semiconducting polymers as the active layer in LEFETs and different metals for the source and drain electrodes. d. Push brightness to the highest level possible: e. Pulsed LEFET OperationAll dielectrics break down at sufficiently high DC bias, based on dielectric strength and thickness. To further enhance brightness, even higher drive voltages will be explored through pulsed voltage operation. NON-TECHNICAL SUMMARY: Research on light emitting field-effect transistors is at the forefront of the interdisciplinary field of semidonducting and metallic polymers and the emerging field of plastic electronics. The demonstration of light emitting field-effect transistors fabricated from semiconducting polymers --- plastic light emitting field-effect transistors --- is a significant breakthrough in the field of plastic electronics. This progress provides an opportunity to study both the fundamental science and the applied science of this novel device concept. The fabrication and study of light emitting field effect transistors involves a combination of polymer science, condensed matter physics, device science, materials chemistry, interface chemistry and materials science. Consequently, research in this area is ideally suited for the interdisciplinary education and training of graduate students and post-doctoral researchers.A goal of the proposed research is the achievement of sufficiently high brightness to enable potentially important applications such as using each light emitting field-effect transistor as a pixel in a flat panel display comprising an array of such devices and/or using the architecture of the light emitting field-effect transistor to demonstrate injection lasers from semiconducting polymers.

技术概述：双极性聚合物发光场效应晶体管（lefet）已经被证实。直接成像显示在通道内的狭窄区域有辐射。光强和发射区的位置由栅极偏压控制。发射区靠近通道中心，在电子电流和空穴电流相等的交点处。发射区的栅极偏置引起的位移和双极性电荷输运表明该器件是真正的发光晶体管。获得资助的研究将集中在实现对发光场效应晶体管工作的基本理解，以优化发射亮度和效率。具体任务包括：a。通过增加栅极电介质（Ci）的电容和减少LEFET的沟道长度来降低聚合物LEFET的工作电压。b.对发射光进行空间和光谱解析。c.测试不同的半导体聚合物作为lefet的活性层和不同的金属作为源极和漏极。d.将亮度推到尽可能高的水平：e.脉冲LEFET操作根据介电强度和厚度，所有介电材料在足够高的直流偏置下都会击穿。为了进一步提高亮度，将通过脉冲电压操作探索更高的驱动电压。非技术总结：发光场效应晶体管的研究处于半导体和金属聚合物交叉领域以及塑料电子新兴领域的前沿。由半导体聚合物制成的发光场效应晶体管——塑料发光场效应晶体管的演示，是塑料电子学领域的重大突破。这一进展为研究这种新型器件概念的基础科学和应用科学提供了机会。发光场效应晶体管的制造与研究涉及到高分子科学、凝聚态物理、器件科学、材料化学、界面化学和材料科学的综合研究。因此，这一领域的研究非常适合研究生和博士后研究人员的跨学科教育和培训。所提出的研究目标是实现足够高的亮度，以实现潜在的重要应用，例如使用每个发光场效应晶体管作为平板显示器中的像素，包括这样的设备阵列和/或使用发光场效应晶体管的架构来演示半导体聚合物的注入激光。