NIRT: Utilization of Ballistic Deflection Phenomena for Room Temperature Devices and Circuitry
NIRT:弹道偏转现象在室温器件和电路中的利用
基本信息
- 批准号:0609140
- 负责人:
- 金额:$ 109.98万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2006
- 资助国家:美国
- 起止时间:2006-07-01 至 2011-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Dr. Marc FeldmanECS 0609140This NIRT proposal focuses on nonlinear ballistic transport at room temperature. Ballistic transport is usually considered an aspect of the quantum physics regime, and has been studied intensively at cryogenic temperatures. Nevertheless certain ballistic deflection effects in mesostructures are quite robust at room temperature. An example is the "ballistic rectifier." The ballistic deflection nonlinearity can be used to construct other devices and circuitry operating at room temperature that are very different from conventional circuitry. In this research ballistic deflection devices and circuitry will be fabricated, tested, and analyzed. Simultaneously the physics of nonlinear room temperature ballistic transport will be investigated; and the architectural challenges presented by the unfamiliar requirements and opportunities of circuitry based upon mesoscopic ballistic transport will be explored. This project is ideal for a multidisciplinary approach, in that investigations at the physics, the device, the circuit, and the architectural level are joined to build a "ballistic electronics." Intellectual Merit: of the proposed research is that nonlinear ballistic transport at room temperature, including experimental devices such as the ballistic rectifier, remains poorly understood. Broader Impacts: of specific initiatives on education, on diversity, and on research dissemination, integrated into the research program. The technical focus of this proposal is a realistic area for future practical applications -- room temperature, sub-100 nm device geometry, moderate voltages inducing non-linear transport, and high frequencies. If the predictions of our preliminary model regarding these four issues are borne out, then room temperature BDT circuitry operating at a terahertz and beyond, with very low power requirement, will be suitable for a multitude of applications.
Marc Feldman 博士ECS 0609140此 NIRT 提案重点关注室温下的非线性弹道输运。 弹道输运通常被认为是量子物理体系的一个方面,并且已经在低温下进行了深入研究。 然而,细观结构中的某些弹道偏转效应在室温下相当强大。 一个例子是“弹道整流器”。 弹道偏转非线性可用于构造在室温下运行的与传统电路非常不同的其他设备和电路。 在这项研究中,将制造、测试和分析弹道偏转装置和电路。同时研究非线性室温弹道输运的物理现象;并将探讨基于介观弹道输运的电路的不熟悉的要求和机遇所带来的架构挑战。 该项目非常适合多学科方法,因为将物理、设备、电路和架构层面的研究结合起来构建“弹道电子学”。 智力优点:所提出的研究是,室温下的非线性弹道输运,包括弹道整流器等实验装置,仍然知之甚少。 更广泛的影响:将教育、多样性和研究传播方面的具体举措纳入研究计划。 该提案的技术重点是未来实际应用的现实领域——室温、亚 100 nm 器件几何结构、引起非线性传输的中等电压和高频。 如果我们关于这四个问题的初步模型的预测得到证实,那么在太赫兹及以上频率下运行的室温 BDT 电路,具有非常低的功率要求,将适用于多种应用。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Roman Sobolewski其他文献
Coherent magnetic vortex motion in optically formed channels for easy flow in YBa2Cu3O7−x superconducting thin films
- DOI:
10.1007/s00340-013-5484-4 - 发表时间:
2013-06-02 - 期刊:
- 影响因子:2.000
- 作者:
A. Jukna;L. Steponavičienė;V. Plaušinaitienė;A. Abrutis;A. Maneikis;K. Šliužienė;V. Lisauskas;Roman Sobolewski - 通讯作者:
Roman Sobolewski
Laser-triggered terahertz radiation from interlayer exchange-coupled spintronic emitters
来自层间交换耦合自旋电子发射器的激光触发太赫兹辐射
- DOI:
- 发表时间:
2024 - 期刊:
- 影响因子:0
- 作者:
R. Adam;D. Cao;D. Bürgler;S. Heidtfeld;Fangzhou Wang;C. Greb;Genyu Chen;Jing Cheng;D. Chakraborty;M. Büscher;M. Mikulics;H. Hardtdegen;Roman Sobolewski;C. M. Schneider - 通讯作者:
C. M. Schneider
Temperature-dependent THz transients emitted by optically excited FeNi/Pt spintronic emitters
光激发 FeNi/Pt 自旋电子发射器发射的温度相关太赫兹瞬变
- DOI:
- 发表时间:
2023 - 期刊:
- 影响因子:0
- 作者:
Jing Cheng;D. Bürgler;R. Adam;I. Komissarov;Debamitra Chaktraborty;Genyu Chen;Roman Sobolewski - 通讯作者:
Roman Sobolewski
(Cd,Mn)Te detectors for characterization of X-ray emissions generated during laser-driven fusion experiments
- DOI:
10.1016/j.nima.2010.09.076 - 发表时间:
2010-12-21 - 期刊:
- 影响因子:
- 作者:
A.S. Cross;J.P. Knauer;A. Mycielski;D. Kochanowska;M. Wiktowska-Baran;R. JakieŁa;J. DomagaŁa;Y. Cui;R.B. James;Roman Sobolewski - 通讯作者:
Roman Sobolewski
3-GHz Silicon Photodiodes Integrated in a 0.18-$\mu$m CMOS Technology
3 GHz 硅光电二极管集成在 0.18 美元 CMOS 技术中
- DOI:
10.1109/lpt.2008.2006404 - 发表时间:
2008 - 期刊:
- 影响因子:2.6
- 作者:
B. Ciftcioglu;Jie Zhang;Lin Zhang;J. Marciante;J. Zuegel;Roman Sobolewski;Hui Wu - 通讯作者:
Hui Wu
Roman Sobolewski的其他文献
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{{ truncateString('Roman Sobolewski', 18)}}的其他基金
U. S. - Germany Cooperative Research: Investigation of Subpicosecond Dynamics of High-Temperature Superconducting Josephson Junction Structures
美德合作研究:高温超导约瑟夫森结结构的亚皮秒动力学研究
- 批准号:
0078949 - 财政年份:2000
- 资助金额:
$ 109.98万 - 项目类别:
Standard Grant
Electromagnetic Imaging of Vortex Dynamics in High-Temperature Superconductors
高温超导体中涡旋动力学的电磁成像
- 批准号:
0073366 - 财政年份:2000
- 资助金额:
$ 109.98万 - 项目类别:
Continuing Grant
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