NIRT: Utilization of Ballistic Deflection Phenomena for Room Temperature Devices and Circuitry

Marc FeldmanECS 0609140本NIRT提案侧重于室温下的非线性弹道输运。 弹道输运通常被认为是量子物理领域的一个方面，并且在低温下得到了深入的研究。 然而，在室温下，介观结构中的某些弹道偏转效应是相当稳健的。 一个例子是“弹道整流器。“弹道偏转非线性可用于构建在室温下工作的其他器件和电路，这些器件和电路与传统电路非常不同。 在这项研究中，弹道偏转装置和电路将制造，测试和分析。同时，将研究非线性室温弹道传输的物理学;将探讨基于介观弹道传输的电路的不熟悉的要求和机会所带来的建筑挑战。 该项目是理想的多学科方法，在物理，设备，电路和建筑水平的调查加入建立一个“弹道电子。“智力优点：拟议的研究的一个问题是，在室温下的非线性弹道输运，包括弹道整流器等实验装置，仍然知之甚少。 更广泛的影响：关于教育、多样性和研究传播的具体倡议，纳入研究计划。 该提案的技术重点是未来实际应用的现实领域-室温，亚100 nm器件几何形状，中等电压诱导非线性传输和高频。 如果我们关于这四个问题的初步模型的预测得到证实，那么在太赫兹及更高频率下工作的室温BDT电路，具有非常低的功率要求，将适用于多种应用。

Dr. Marc FeldmanECS 0609140This NIRT proposal focuses on nonlinear ballistic transport at room temperature. Ballistic transport is usually considered an aspect of the quantum physics regime, and has been studied intensively at cryogenic temperatures. Nevertheless certain ballistic deflection effects in mesostructures are quite robust at room temperature. An example is the "ballistic rectifier." The ballistic deflection nonlinearity can be used to construct other devices and circuitry operating at room temperature that are very different from conventional circuitry. In this research ballistic deflection devices and circuitry will be fabricated, tested, and analyzed. Simultaneously the physics of nonlinear room temperature ballistic transport will be investigated; and the architectural challenges presented by the unfamiliar requirements and opportunities of circuitry based upon mesoscopic ballistic transport will be explored. This project is ideal for a multidisciplinary approach, in that investigations at the physics, the device, the circuit, and the architectural level are joined to build a "ballistic electronics." Intellectual Merit: of the proposed research is that nonlinear ballistic transport at room temperature, including experimental devices such as the ballistic rectifier, remains poorly understood. Broader Impacts: of specific initiatives on education, on diversity, and on research dissemination, integrated into the research program. The technical focus of this proposal is a realistic area for future practical applications -- room temperature, sub-100 nm device geometry, moderate voltages inducing non-linear transport, and high frequencies. If the predictions of our preliminary model regarding these four issues are borne out, then room temperature BDT circuitry operating at a terahertz and beyond, with very low power requirement, will be suitable for a multitude of applications.