SBIR Phase I: High-Speed Atomic Layer Disposition System for Compound Semiconductor Thin Films

SBIR 第一阶段：化合物半导体薄膜高速原子层沉积系统

• 批准号: 0637512
• 负责人: Prasad Gadgil
• 金额: --
• 依托单位: Atomic Precision Systems Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-01-01 至 2007-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0637512&HistoricalAwards=false
• 关键词: SBIR; Phase; Speed; Atomic; Layer

This Small Business Innovation Research Phase I project proposes to develop a high-speed and flexible prototype Atomic Layer Deposition (ALD) system suitable for its adaptation to an in-situ precursor generation and a plasma source to develop novel Gallium Nitride (GaN) thin film processes for fabrication of high efficiency and High-Brightness Light Emitting Diodes (HBELDs). Recent performance of HBLEDs shows tremendous promise to replace the incandescent light bulb and thereby reduce the electricity consumption by 50%. To realize this dream, however, HBLED production equipment and process chemistry must be suitably advanced for large scale production. In the proposed phase I effort, Atomic Precision will develop a novel prototype thin film processing system capable of developing a low temperature, high deposition rate and low-cost thin film deposition process, with monolayer precision and low defects. When successfully implemented, this novel deposition system and process technology will have broader applications ion other areas, such as low-cost solar cells, industrial hard coatings, metallization and conformal coatings on intricate components.

该小型企业创新研究第一阶段项目提出开发一种高速灵活的原型原子层沉积（ALD）系统，适用于原位前体生成和等离子体源，以开发新型氮化镓（GaN）薄膜工艺，用于制造高效率和高亮度发光二极管（HBELD）。HBLED的最新表现显示出巨大的前景，以取代白炽灯泡，从而减少50%的电力消耗。然而，为了实现这一梦想，HBLED生产设备和工艺化学必须适当地先进以进行大规模生产。在拟议的第一阶段工作中，Atomic Precision将开发一种新型的原型薄膜处理系统，能够开发低温，高沉积速率和低成本的薄膜沉积工艺，具有单层精度和低缺陷。一旦成功实施，这种新型的沉积系统和工艺技术将在其他领域有更广泛的应用，如低成本太阳能电池，工业硬涂层，金属化和复杂部件上的保形涂层。