SBIR Phase II: High-Speed Atomic Layer Disposition System for Compound Semiconductor Thin Films

小企业创新研究（SBIR）第二阶段项目将开发一种新型的高速原子层沉积技术，包括ALD反应器和相关的薄膜工艺，用于制造高亮度发光二极管（HBLED）所需的GaN薄膜。 拟议的努力是基于第一阶段SBIR项目中ALD反应器以5倍于市售ALD反应器的速度成功运行的示范。 独特的ALD反应器概念可以在一个腔室中处理原子级薄膜和微米厚的薄膜。 此外，化学前体的使用点，更安全和低成本的产生与低温处理相结合，有望实现包括GaN在内的各种化合物半导体的低缺陷密度薄膜。 低缺陷密度、低成本GaN薄膜和厚膜是HBLED的构建块。一个HBLED灯泡，消耗15瓦，持续10年以上，成本几美元，可以有效地取代荧光灯管消耗30瓦和白炽灯泡消耗100瓦。 提出的ALD技术有望降低工艺成本，并提高HBLED质量，这对于实现用于全球照明应用的可负担HBLED的超大规模生产至关重要，从而节省50%的潜在电力和巨大的相关环境效益。

The Small Business Innovation Research (SBIR) Phase II project will develop a novel high-speed Atomic Layer Deposition technology comprising an ALD reactor and associated thin film processes for GaN thin films required for fabrication of high-brightness Light Emitting Diode (HBLED). The proposed effort is based on successful demonstration of operation of the ALD reactor in phase-I SBIR project at 5x speed of commercially available ALD reactors. The unique ALD reactor concept can process atomically thin films and also micron thick films in one chamber. Furthermore, point-of-use, safer and low-cost generation of chemical precursors combined with low temperature processing promises low defect density thin films of a variety of compound semiconductors including GaN. Low defect density, low cost GaN thin and thick films are building blocks of an HBLED. An HBLED bulb that consumes 15 Watts, lasts 10+ years and costs a few dollars can effectively replace a fluorescent tube consuming 30 Watts and an incandescent bulb consuming 100 Watts. The proposed ALD technology promises to reduce process cost, and improve the HBLED quality critical to realize ultra-large scale production of affordable HBLEDs for worldwide lighting applications leading to 50% potential electricity savings and tremendous associated environmental benefits.