Systematic Atomic and Molecular Layer Control of Schottky Barrier Height

肖特基势垒高度的系统原子和分子层控制

• 批准号: 0706138
• 负责人: Raymond Tung
• 金额: $ 37.01万
• 依托单位: CUNY Brooklyn College
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-06-01 至 2011-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0706138&HistoricalAwards=false
• 关键词: Systematic; Atomic; Molecular; Layer; Control

Technical: This project studies control of Schottky barrier heights at metal-semiconductor interfaces at the atomic/molecular level. The Schottky barrier height control for inorganic semiconductors and the contact formation on organic materials are significant technological challenges for microelectronics, photonics, and sensors industries. The project focuses on the fundamental mechanism of Schottky barrier formation. It includes the following research subtopics: investigation of interface dipole formation in response to changes in the interlayer chemistry at semiconductor surface; study of the effect of deposition temperature on the Schottky barrier height and the microstructure of the interfaces; investigation of Schottky barrier height control by the use of self-assembled monolayer molecules to new molecule-semiconductor systems; evaluation of the soft-landing instant cool beam technique in parallel with the variable temperature indirect thermalization deposition technique in forming metallic contacts on organic materials; creation and study of self-assembled monolayer with artificially designed porosity by focused ion beam (FIB) for Schottky barrier height control; utilization of self-assembled metal islands in the fabrication of hybrid metal/molecular-layer structures for low resistance contacts; and theoretical investigation of the role played by the chemistry of the interlayer between the semiconductor and the metal. Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance. If a control scheme of Schottky barrier height proposed for this project is successfully developed, the benefit to industries could be significant with potential impact on the society at large. The project provides Ph.D. students with excellent opportunities being trained in a wide span of physical, chemical, materials science, engineering, and computational research areas of current scientific and technological interest. It also includes research opportunities for undergraduate and high-school students, enhancing the Brooklyn Outreach for Scientific Careers and other programs in the Brooklyn College, which has a large minority and urban enrollment. The PI will continue his participation in the Minority Access to Research Careers program, which introduces and encourages minority students to pursue careers in scientific research.

技术：本项目研究在原子/分子水平上控制金属-半导体界面的肖特基势垒高度。无机半导体的肖特基势垒高度控制和有机材料上的接触形成是微电子、光子学和传感器工业的重大技术挑战。该项目的重点是肖特基势垒形成的基本机制。它包括以下研究子课题：半导体表面层间化学变化引起的界面偶极子形成的研究;沉积温度对肖特基势垒高度和界面微结构的影响的研究;利用自组装单层分子控制肖特基势垒高度的研究，以新的分子-半导体系统;评价软着陆瞬间冷却束技术与变温间接热化沉积技术在有机材料上形成金属接触的并行性;通过聚焦离子束（FIB）产生和研究具有人工设计孔隙率的自组装单层，用于肖特基势垒高度控制;自组装金属岛在制造低电阻接触的混合金属/分子层结构中的利用;以及对半导体和金属之间的夹层的化学性质所起的作用的理论研究。非技术性：该项目涉及材料科学专题领域的基础研究问题，具有高度的技术相关性。如果为该项目提出的肖特基势垒高度控制方案得以成功开发，将对工业产生重大效益，并对整个社会产生潜在影响。该项目提供博士学位。在当前科学和技术兴趣的物理，化学，材料科学，工程和计算研究领域进行培训的学生有很好的机会。它还包括为本科生和高中生提供研究机会，加强布鲁克林科学职业外展和布鲁克林学院的其他项目，该学院拥有大量少数民族和城市招生。PI将继续参与少数民族获得研究职业计划，该计划介绍并鼓励少数民族学生从事科学研究。