STTR Phase I: Electrically pumped silicon laser for monolithic integration of electronics and photonics
STTR Phase I: Electrically pumped silicon laser for monolithic integration of electronics and photonics
批准号:
0712214
负责人:
Lanlan Gu
金额:
$0.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2007
资助国家:
美国
项目状态:
已结题
起止时间:
2007-07-01 至 2008-12-31
中文摘要
这项小型企业技术转移(STTR)第一阶段研究项目旨在开发一种实用的硅激光器,最终目标是在单个硅衬底上集成电子和光子学。过去的硅光源方法,包括硅/锗超晶格、多孔硅、硅纳米晶体、各种富硅氧化物结构、具有纹理表面的大块硅和各种光泵浦方案,在过去的几十年里取得了显著的进展。然而,一种具有令人满意量子效率的电泵浦硅激光器尚未被证明。该计划利用了最近的一项进展,该进展基于由自旋掺杂剂和自旋玻璃混合物形成的掺杂硅纳米结构,该结构已经在室温下实现了0.013%的外量子效率和明显的线宽变窄超过一个明确的阈值。然而,先前的发展受到波导结构差的影响,波导结构不能有效地收集产生的光子,降低了有效增益。本项目将尝试通过研究空间增益分布和设计一个波导结构来解决这个问题,以最大化波导的光模场和空间增益分布的重叠。该方案旨在将外部量子效率提高到几个百分点,使其与化合物半导体激光器相当。将电子学和光学技术结合在一块硅芯片上一直是几代科学家和工程师的愿景。开发电泵浦硅激光器是实现这一愿景的关键一步。然而,本质上较弱的光子发射能力使得硅的使用存在问题。硅激光器可以将所有光电元件集成到一块硅芯片上。这种芯片可能在计算机、消费电子产品和医疗设备中得到应用。所提出的硅激光器方法的一个特点是其简单的制造过程,很容易与现代硅超大规模集成电路技术兼容。这将加速该技术进入市场。
英文摘要
This Small Business Technology Transfer (STTR) Phase I research project aims at developing a practical silicon laser with the ultimate goal of monolithic integration of electronics and photonics on a single silicon substrate. Past approaches to silicon light sources, including Si/Ge superlattices, porous silicon, silicon nanocrystals, a variety of silicon-rich oxide structures, bulk silicon with a textured surface, and various optical pumping schemes have made noteworthy progress through the last few decades. Nonetheless, an electrically pumped silicon laser with satisfactory quantum efficiency has yet to be demonstrated. The proposed program exploits a recent development based on doped silicon nanostructures formed from mixtures of spin-on-dopant and spin-on-glass, which has already achieved an external quantum efficiency of 0.013% and obvious linewidth narrowing above a clear threshold, all at room temperature. The prior development, however, suffered from a poor waveguide structure which collected generated photons inefficiently and lowered effective gain. This project will attempt to solve this problem by investigating the spatial gain profile and designing a waveguide structure tailored to maximize the overlap of the optical mode field of the waveguide and the spatial gain profile. The proposed program aims at enhancing the external quantum efficiency to a few percent, which becomes comparable to compound semiconductor lasers.Having electronics and optics work together on one silicon chip has been the vision of generations of scientists and engineers. Developing an electrically pumped silicon laser is a crucial step toward realizing this vision. Yet the intrinsically weak photon emission capability made the use of silicon problematic. A silicon laser would enable the integration of all optoelectronic components on a single silicon chip. Such chips may find applications in computers, consumer electronics, and medical devices. A special feature of the proposed silicon laser approach is its simple fabrication process, which is readily compatible with modern silicon VLSI technology. This would hasten adoption of the technology into the marketplace.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
国内基金
海外基金
登录
查看更多内容
Baryogenesis, Dark Matter and Nanohertz Gravitational Waves from a Dark
Supercooled Phase Transition
-
批准号:24ZR1429700
-
项目类别:省市级项目
-
资助金额:--
-
批准年份:2024
-
负责人:YUICHIRO NAKAI
-
依托单位:
ATLAS实验探测器Phase 2升级
-
批准号:11961141014
-
项目类别:国际(地区)合作与交流项目
-
资助金额:3350万元
-
批准年份:2019
-
负责人:刘衍文
-
依托单位:
地幔含水相Phase E的温度压力稳定区域与晶体结构研究
-
批准号:41802035
-
项目类别:青年科学基金项目
-
资助金额:12.0万元
-
批准年份:2018
-
负责人:张里
-
依托单位:
基于数字增强干涉的Phase-OTDR高灵敏度定量测量技术研究
-
批准号:61675216
-
项目类别:面上项目
-
资助金额:60.0万元
-
批准年份:2016
-
负责人:叶青
-
依托单位:
基于Phase-type分布的多状态系统可靠性模型研究
-
批准号:71501183
-
项目类别:青年科学基金项目
-
资助金额:17.4万元
-
批准年份:2015
-
负责人:陈童
-
依托单位:
纳米(I-Phase+α-Mg)准共晶的临界半固态形成条件及生长机制
-
批准号:51201142
-
项目类别:青年科学基金项目
-
资助金额:25.0万元
-
批准年份:2012
-
负责人:张英波
-
依托单位:
连续Phase-Type分布数据拟合方法及其应用研究
-
批准号:11101428
-
项目类别:青年科学基金项目
-
资助金额:23.0万元
-
批准年份:2011
-
负责人:黄卓
-
依托单位:
D-Phase准晶体的电子行为各向异性的研究
-
批准号:19374069
-
项目类别:面上项目
-
资助金额:6.4万元
-
批准年份:1993
-
负责人:张殿琳
-
依托单位: