SBIR Phase I: Room Temperature Silicon-compatible Nano-LED/Laser Electrically Pumped by Silicon Field Emission Device

SBIR 第一阶段：硅场发射器件电泵浦的室温硅兼容纳米 LED/激光

• 批准号: 1014210
• 负责人: Edward Ackerman
• 金额: $ 13.92万
• 依托单位: Photonic Systems Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-07-01 至 2010-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1014210&HistoricalAwards=false
• 关键词: SBIR; Phase; Room; Temperature; Silicon

This Small Business Innovation Research (SBIR) Phase I project aims to develop silicon (Si) compatible light sources that will enable monolithic integration of electronic and photonic components on the same Si platform. A novel electrical pumping scheme will be investigated to convert germanium (Ge) from an indirect-bandgap to a pseudo-direct-bandgap material using ultra-high-density free electrons. The objective is to realize strong electroluminescence in the Ge thin film and thus demonstrate the feasibility of fabricating an electrically pumped nano-LED or laser within the complementary metal oxide semiconductor (CMOS) process flow. The broader impact/commercial potential of this project will be a fundamental breakthrough in photonics technology that will benefit and possibly even revolutionize the industry that develops and markets communication systems, because it will supply the last missing link ? the light source ? required for true monolithic integration of photonic and electronic circuits on one low-cost Si platform. Extensive applications with potentially enormous markets would be enabled, ranging from chip-to-chip optical relays to long-haul optical communications.

该小型企业创新研究（SBIR）第一阶段项目旨在开发硅（Si）兼容光源，使电子和光子元件在同一Si平台上实现单片集成。 本论文将探讨一种新颖的电抽运机制，利用超高密度自由电子将锗从间接带隙材料转换为准直接带隙材料。目的是实现Ge薄膜中的强电致发光，从而证明在互补金属氧化物半导体（CMOS）工艺流程内制造电泵浦纳米LED或激光器的可行性。该项目更广泛的影响/商业潜力将是光子技术的根本性突破，这将有利于甚至可能彻底改变开发和销售通信系统的行业，因为它将提供最后一个缺失的环节。光源？这是在一个低成本Si平台上实现光子和电子电路的真正单片集成所需的。从芯片到芯片的光中继到长距离光通信，具有潜在巨大市场的广泛应用将成为可能。