Ultraviolet electroabsorption modulators based on III-nitride quantum wells

ECCS-0725786 Theodore Moustakas波士顿大学智力价值：该项目旨在开发在紫外波长下工作的半导体光调制器，这是一个目前还不太发达的器件家族，在非视距自由空间光通信、传感和光谱学以及Q开关脉冲激光器等领域具有重要应用。 最近，研究人员在GaN/AlGaN量子威尔斯阱中发现了基于量子限制斯塔克效应的紫外电光响应。 基于这些结果，拟议的研究将解决量子阱设计和设备的几何形状？包括准波导和非对称法布里-珀罗调制器的发展？以优化关键的调制器参数，例如对比度、通态损耗、驱动电压和带宽。 此外，研究人员计划在A面GaN/AlGaN量子阱中展示基于偏振旋转的电吸收调制器，其中可以利用晶体结构的大面内各向异性来获得非常大的单程对比度。威尔斯。 最后，这些设备的高速性能进行了研究。 更广泛的影响：拟议的活动将通过在广泛的学科中培训学生来促进教育，这些学科包括量子阱工程、半导体外延生长、紫外线和高速光电子器件的制造和测试。 为了提高该计划的有效性和范围，将强调本科生和高中实习生的参与。 还计划建立一个期刊俱乐部和相关网站，以进一步促进III族氮化物光电子学这一重要领域的思想传播和交流。 此外，拟议的研究将导致开发新的设备，这将扩大紫外光电子学的应用领域，例如用于光通信，光谱学和传感。 更一般地说，这项工作将推进氮化物异质结构领域的知识状态（特别是关于在非传统衬底平面上制造量子威尔斯和分布式布拉格反射器），从而有利于这些材料的其他器件应用。

ECCS-0725786Theodore MoustakasBoston UniversityIntellectual merit: This project is aimed at the development of semiconductor optical modulators operating at ultraviolet wavelengths, a family of devices that is currently quite underdeveloped and that has important applications in areas such as non-line-of-sight free-space optical communications, sensing and spectroscopy, and Q-switched pulsed lasers. Recently the investigators have demonstrated a strong electro-optic response at ultraviolet wavelengths based on the quantum-confined Stark effect in GaN/AlGaN quantum wells. Building on these results, the proposed research will address the quantum-well design and device geometry ? including the development of quasi-waveguide and asymmetric-Fabry-Perot modulators ? to optimize key modulator parameters such as contrast ratio, on-state losses, drive voltage, and bandwidth. In addition the investigators plan to demonstrate electroabsorption modulators based on polarization rotation in A-plane GaN/AlGaN quantum wells, where the large in-plane anisotropy of the crystal structure can be exploited to obtain very large single-pass contrast ratios. Finally, the high-speed properties of these devices will be investigated. Broader impacts: The proposed activities will promote education through the training of students in a wide range of disciplines, including quantum-well engineering, semiconductor epitaxial growth, ultraviolet and high-speed optoelectronic device fabrication and testing. To increase the effectiveness and scope of this program, the involvement of undergraduates and high-school interns will be emphasized. A journal club and associated website are also planned to further contribute to the dissemination and exchange of ideas in the important field of III-nitride optoelectronics. Furthermore, the proposed research will lead to the development of novel devices that will expand the realm of applications of ultraviolet optoelectronics, e.g. for optical communications, spectroscopy, and sensing. More in general, this work will advance the state of knowledge in the area of nitride heterostructures (particularly with regards to the fabrication of quantum wells on non-traditional substrate planes and of distributed Bragg reflectors), thereby benefiting other device applications of these materials.