EAGER: Highly Doped p-type Distributed Bragg Reflectors based on AlGaN for Deep UV Optoelectronic Devices
EAGER:用于深紫外光电器件的基于 AlGaN 的高掺杂 p 型分布式布拉格反射器
基本信息
- 批准号:1313625
- 负责人:
- 金额:$ 13.09万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2013
- 资助国家:美国
- 起止时间:2013-06-15 至 2014-09-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Objective: This program focuses on the development of a novel class of p-type conductive and highly reflective AlGaN-based distributed Bragg reflectors to enable a host of deep ultraviolet optoelectronic devices, including efficient deep ultraviolet light emitting diodes, vertical-cavity-surface-emitting-lasers, and Fabry-Perot based optical modulators. The proposed project is transformative because it will create the foundations for a new family of efficient deep ultraviolet optoelectronic devices and will usher a host of new industrial applications including water / air / food sterilization and free space communications. Intellectual Merit: The intellectual merit of the proposed project is the utilization of polarization enhanced ionization of dopants, a unique property to AlGaN alloys, to develop an innovative design of deep ultraviolet distributed Bragg reflectors for a number of optoelectronic devices. The work will also advance the development of AlGaN alloys, which are of great scientific and technological interest.Broader Impacts: The proposed research promotes the promotion of education through the training of students in a variety of disciplines, ranging from epitaxial growth, to quantum engineering, and semiconductor device physics. To increase the effectiveness and scope of the program, the involvement of undergraduates and high-school interns will be emphasized by taking advantage of several existing channels at Boston University, many of which have a strong focus on the recruitment of underrepresented minorities. Finally, the proposed research will have a strong impact on the environmental and medical sectors, due to specific applications to water / air / food sterilization and for diagnostic and therapeutic uses.
目的:本项目致力于开发一种新型的p型导电和高反射AlGaN基分布式布拉格反射器,以实现一系列深紫外光光电子器件,包括高效的深紫外光发射二极管、垂直腔面发射激光器和法布里-珀罗基光调制器。拟议的项目具有变革性,因为它将为一系列新的高效深紫外光光电子器件奠定基础,并将迎来一系列新的工业应用,包括水/空气/食品杀菌和自由空间通信。智力价值:拟议项目的智力价值是利用掺杂的偏振增强电离,这是AlGaN合金的一种独特性质,为许多光电子器件开发一种创新的深紫外光分布式布拉格反射器设计。这项工作还将推动具有重大科学和技术利益的AlGaN合金的发展。广泛的影响:拟议的研究通过培训学生在不同学科的教育促进促进,从外延生长到量子工程和半导体器件物理。为了提高该计划的有效性和范围,将利用波士顿大学现有的几个渠道,强调本科生和高中实习生的参与,其中许多渠道都非常注重招聘代表不足的少数族裔。最后,由于水/空气/食品消毒以及诊断和治疗用途的具体应用,拟议的研究将对环境和医疗部门产生重大影响。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Theodore Moustakas其他文献
Theodore Moustakas的其他文献
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Development of High Efficiency Deep Ultraviolet Light Emitting Diodes
高效深紫外发光二极管的研制
- 批准号:
1408364 - 财政年份:2014
- 资助金额:
$ 13.09万 - 项目类别:
Standard Grant
Ultraviolet electroabsorption modulators based on III-nitride quantum wells
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0725786 - 财政年份:2007
- 资助金额:
$ 13.09万 - 项目类别:
Standard Grant
Growth of Diamond and Cubic Boron Nitride Single Crystalline Films
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9014370 - 财政年份:1991
- 资助金额:
$ 13.09万 - 项目类别:
Continuing grant
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