Growth of Diamond and Cubic Boron Nitride Single Crystalline Films

本项目“金刚石和立方氮化硼单晶薄膜的生长”研究外延晶体生长的实验和理论方面。本文将利用电子回旋共振辅助分子束外延技术，研究金刚石薄膜在金刚石衬底不同晶体表面的同外延生长。原子氢在稳定某些表面重建和去除石墨共沉积中的作用，以及电子和离子辅助生长和掺杂现象将被研究。外延薄膜的输运、光学和复合特性将被表征。缺陷将通过电子自旋共振、阴极发光和拉曼光谱进行研究，并研究缺陷浓度与生长速率之间的关系。这些基础研究的结果对于金刚石和氮化硼在电子应用中的潜在应用具有重要意义，其功能超越了硅基电子，可以改善器件和电路性能，并将电子/光子应用扩展到新的领域，例如汽车和喷气发动机高温环境中的传感器和处理器的使用，以及制造过程控制。

This project on "Growth of Diamond and Cubic Boron Nitride Single Crystalline Films" addresses experimental and theoretical aspects of epitaxial crystal growth. The homoepitaxial growth of diamond films on different crystallographic surfaces of diamond substrates will be studied using electron cyclotron resonance assisted molecular beam epitaxy. The role of atomic hydrogen in stabilizing certain surface reconstructions and in removing graphitic co- deposits will be investigated, as well as electron and ion assisted growth and doping phenomena. Transport, optical, and recombination properties of the epitaxial films will be characterized. Defects will be studied by electron spin resonance, cathodoluminesence, and Raman spectroscopy, and correlations between defect concentration and growth rate will be investigated. The results of these fundamental studies are of importance to the potential use of diamond and boron nitride in electronic applications with capabilities beyond silicon-based electronics enabling improved device and circuit performance, and extending electronic/photonic applications to new areas such as sensor and processor utilization in the high temperature environments of automobile and jet engines, and for process control in manufacturing.