High-Sensitivity Measurements of Interacting Disordered Quantum Hall Systems

相互作用的无序量子霍尔系统的高灵敏度测量

• 批准号: 0804794
• 负责人: Hong-Wen Jiang
• 金额: $ 34.5万
• 依托单位: University of California-Los Angeles
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-05-15 至 2013-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0804794&HistoricalAwards=false
• 关键词: Sensitivity; Measurements; Interacting; Disordered; Quantum

TechnicalThis individual investigator award supports a project to investigate interacting disordered electrons in semiconductor heterostructures. High-frequency measurements in radio and microwave frequency ranges will be developed to address a set of questions that cannot directly be answered by more standard transport techniques. An emphasis of the investigations will be on how spin/charge interactions can influence the ground state properties of electrons when two sets of Landau levels are brought into degeneracy. The study will be facilitated by using resistively detected nuclear magnetic resonance and microwave absorption spectroscopy techniques in a GaAs/AlGaAs quantum well with two occupied subbands. Another focus of the research will be on the search for broken-symmetry magnetic and spin-paring states of highly correlated electrons. High-frequency spectroscopy studies will be done in strained Si/SiGe heterostructures. The results anticipated from these experiments may have applications in high-frequency electronics. The hands-on research, which will include microwave engineering and characterizations, will give graduate and undergraduate students excellent training in the important technical area of microwave electronics.Nontechnical:This individual investigator award supports an experimental research project involving high-frequency studies of advanced semiconductor devices. These electronic devices are very similar to those widely used in high-speed electronics and in information processing. The main objective of the project is to understand a set of newly-discovered electronic properties stemming from the intricate interactions between two electrons due to a property of electrons called electron spin. The ability to gain such understanding will be made possible by using an array of unconventional high-frequency techniques. The results anticipated from these experiments may have broader impacts on the development of the next generation of semiconductor devices. For example, devices using electron spins to perform information processing via memory and logic functionality are gradually emerging. The capability to measure and manipulate electron spins at high frequencies may become an important part of the development of these new devices. The heavy hands-on research, which will include microwave engineering and characterizations, will give graduate and undergraduate students excellent training for microwave electronics, a technological area that is of great economic importance to our society.

这个个人研究者奖支持一个项目，以调查半导体异质结构中相互作用的无序电子。 将开发无线电和微波频率范围内的高频测量，以解决更标准的运输技术无法直接回答的一系列问题。 研究的重点是当两组朗道能级进入简并态时，自旋/电荷相互作用如何影响电子的基态性质。 研究将促进通过使用连续检测的核磁共振和微波吸收光谱技术在GaAs/AlGaAs量子阱与两个占用的子带。 研究的另一个重点将是寻找高度相关电子的对称性破缺磁性和自旋配对状态。高频光谱研究将在应变Si/SiGe异质结构中进行。 从这些实验中预期的结果可能在高频电子学中有应用。 实践研究，其中包括微波工程和表征，将给研究生和本科生在微波电子学的重要技术领域优秀的培训。非技术：这个个人研究者奖支持一个实验研究项目，涉及先进的半导体器件的高频研究。 这些电子设备与高速电子和信息处理中广泛使用的设备非常相似。该项目的主要目标是了解一组新发现的电子性质，这些电子性质源于两个电子之间由于电子自旋性质而产生的复杂相互作用。 通过使用一系列非常规的高频技术，将有可能获得这种理解。 这些实验的预期结果可能对下一代半导体器件的开发产生更广泛的影响。 例如，使用电子自旋来经由存储器和逻辑功能执行信息处理的设备逐渐出现。 在高频下测量和操纵电子自旋的能力可能成为这些新设备开发的重要组成部分。 繁重的动手研究，其中将包括微波工程和表征，将为研究生和本科生提供微波电子学的优秀培训，这是一个对我们社会具有重要经济意义的技术领域。